BGY787
750 MHz, 21.5 dB gain push-pull
Rev. 08 — 1 April 2005
Product data sheet
1. Product profile
1.1 General description
Hybrid amplifier module in a SOT115J package operating with a voltage supply of
24 V (DC).
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
MSC895
1.2 Features
s
s
s
s
s
Extremely low noise
Silicon nitride passivation
Rugged construction
Gold metallization ensures excellent reliability
Excellent linearity
1.3 Applications
s
CATV systems operating in the frequency range of 40 MHz to 750 MHz
1.4 Quick reference data
Table 1:
Symbol
G
p
I
tot
[1]
Quick reference data
Parameter
power gain
total current consumption (DC)
Conditions
f = 50 MHz
f = 750 MHz
V
B
= 24 V
[1]
Min
21
21.5
-
Typ
21.5
22.5
220
Max
22
-
240
Unit
dB
dB
mA
The module normally operates at V
B
= 24 V, but is able to withstand supply transients up to 30 V.
Philips Semiconductors
BGY787
750 MHz, 21.5 dB gain push-pull amplifier
2. Pinning information
Table 2:
Pin
1
2
3
5
7
8
9
Pinning
Description
input
common
common
+V
B
common
common
output
1 3 5 7 9
1
5
9
Simplified outline
Symbol
2 3 7 8
sym095
3. Ordering information
Table 3:
Ordering information
Package
Name
BGY787
-
Description
rectangular single-ended package; aluminium flange;
2 vertical mounting holes; 2
×
6-32 UNC and 2 extra
horizontal mounting holes; 7 gold-plated in-line leads
Version
SOT115J
Type number
4. Limiting values
Table 4:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
i
T
stg
T
mb
RF input voltage
storage temperature
mounting base temperature
Conditions
Min
-
−40
−20
Max
60
+100
+100
Unit
dBmV
°C
°C
9397 750 14773
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 08 — 1 April 2005
2 of 11
Philips Semiconductors
BGY787
750 MHz, 21.5 dB gain push-pull amplifier
5. Characteristics
Table 5:
Characteristics at bandwidth 40 MHz to 750 MHz
V
B
= 24 V; T
case
= 30
°
C; Z
S
= Z
L
= 75
Ω
.
Symbol
G
p
SL
FL
s
11
Parameter
power gain
slope cable equivalent
flatness of frequency response
input return losses
Conditions
f = 50 MHz
f = 750 MHz
f = 40 MHz to 750 MHz
f = 40 MHz to 750 MHz
f = 40 MHz to 80 MHz
f = 80 MHz to 160 MHz
f = 160 MHz to 320 MHz
f = 320 MHz to 640 MHz
f = 640 MHz to 750 MHz
s
22
output return losses
f = 40 MHz to 80 MHz
f = 80 MHz to 160 MHz
f = 160 MHz to 320 MHz
f = 320 MHz to 640 MHz
f = 640 MHz to 750 MHz
ϕ
S21
CTB
X
mod
CSO
d
2
V
o
F
phase response
composite triple beat
cross modulation
f = 50 MHz
110 channels flat; V
o
= 44 dBmV;
measured at 745.25 MHz
110 channels flat; V
o
= 44 dBmV;
measured at 55.25 MHz
Min
21
21.5
0
-
20
18.5
17
15.5
14
20
18.5
17
15.5
14
−45
-
-
-
[1]
Typ
21.5
22.5
1
±0.2
33
30
25
22
20.5
28.5
27.5
25
22
20
-
Max
22
-
1.5
±0.5
-
-
-
-
-
-
-
-
-
-
+45
Unit
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
deg
dB
dB
dB
dB
dBmV
dB
dB
dB
dB
dB
mA
−54.5 −53
−54
−52
composite second order distortion 110 channels flat; V
o
= 44 dBmV;
measured at 746.5 MHz
second order distortion
output voltage
noise figure
d
im
=
−60
dB
f = 50 MHz
f = 450 MHz
f = 550 MHz
f = 600 MHz
f = 750 MHz
[2]
−57.5 −53
−75
63
4
-
-
-
5
220
−63
-
5
5.5
5.5
6
6.5
240
-
61
-
-
-
-
-
I
tot
[1]
[2]
[3]
total current consumption (DC)
[3]
-
f
p
= 55.25 MHz; V
p
= 44 dBmV; f
q
= 691.25 MHz; V
q
= 44 dBmV; measured at f
p
+ f
q
= 746.5 MHz.
Measure according to DIN45004B;
f
p
= 740.25 MHz; V
p
= V
o
; f
q
= 747.25 MHz; V
q
= V
o
−
6 dB; f
r
= 749.25 MHz; V
r
= V
o
−
6 dB; measured at f
p
+ f
q
−
f
r
= 738.25 MHz.
The module normally operates at V
B
= 24 V, but is able to withstand supply transients up to 30 V.
9397 750 14773
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 08 — 1 April 2005
3 of 11
Philips Semiconductors
BGY787
750 MHz, 21.5 dB gain push-pull amplifier
Table 6:
Characteristics at bandwidth 40 MHz to 770 MHz
V
B
= 24 V; T
case
= 30
°
C; Z
S
= Z
L
= 75
Ω
.
Symbol Parameter
G
p
SL
FL
s
11
power gain
slope cable equivalent
input return losses
Conditions
f = 50 MHz
f = 770 MHz
f = 40 MHz to 770 MHz
f = 40 MHz to 80 MHz
f = 80 MHz to 160 MHz
f = 160 MHz to 320 MHz
f = 320 MHz to 640 MHz
f = 640 MHz to 770 MHz
s
22
output return losses
f = 40 MHz to 80 MHz
f = 80 MHz to 160 MHz
f = 160 MHz to 320 MHz
f = 320 MHz to 640 MHz
f = 640 MHz to 770 MHz
ϕ
S21
CTB
X
mod
CSO
d
2
V
o
F
phase response
composite triple beat
cross modulation
composite second order
distortion
second order distortion
output voltage
noise figure
d
im
=
−60
dB
f = 50 MHz
f = 450 MHz
f = 550 MHz
f = 600 MHz
f = 770 MHz
I
tot
[1]
[2]
[3]
Min
21
21.5
0
-
20
18.5
17
15.5
14
20
18.5
17
15.5
14
−45
-
-
-
[1]
[2]
Typ
21.5
22.5
1
±0.2
33
30
25
22.5
20.5
28.5
27.5
25
22
20
-
Max Unit
22
-
1.5
-
-
-
-
-
-
-
-
-
-
+45
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
deg
dB
dB
dB
dB
dBmV
dB
dB
dB
dB
dB
mA
flatness of frequency response f = 40 MHz to 770 MHz
±0.5
dB
f = 50 MHz
110 channels flat; V
o
= 44 dBmV; measured
at 745.25 MHz
110 channels flat; V
o
= 44 dBmV; measured
at 55.25 MHz
110 channels flat; V
o
= 44 dBmV; measured
at 746.5 MHz
−54.5 −53
−54
−52
−57.5 −53
−75
63
4
-
-
-
5
220
−63
-
5
5.5
5.5
6
6.5
240
-
61
-
-
-
-
-
total current consumption (DC)
f
p
= 55.25 MHz; V
p
= 44 dBmV; f
q
= 691.25 MHz; V
q
= 44 dBmV; measured at f
p
+ f
q
= 746.5 MHz.
[3]
-
Measure according to DIN45004B;
f
p
= 740.25 MHz; V
p
= V
o
; f
q
= 747.25 MHz; V
q
= V
o
−
6 dB; f
r
= 749.25 MHz; V
r
= V
o
−
6 dB; measured at f
p
+ f
q
−
f
r
= 738.25 MHz.
The module normally operates at V
B
= 24 V, but is able to withstand supply transients up to 30 V.
9397 750 14773
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 08 — 1 April 2005
4 of 11
Philips Semiconductors
BGY787
750 MHz, 21.5 dB gain push-pull amplifier
Table 7:
Characteristics at bandwidth 40 MHz to 600 MHz
V
B
= 24 V; T
case
= 30
°
C; Z
S
= Z
L
= 75
Ω
.
Symbol Parameter
G
p
SL
FL
s
11
power gain
slope cable equivalent
input return losses
Conditions
f = 50 MHz
f = 600 MHz
f = 40 MHz to 600 MHz
f = 40 MHz to 80 MHz
f = 80 MHz to 160 MHz
f = 160 MHz to 320 MHz
f = 320 MHz to 600 MHz
s
22
output return losses
f = 40 MHz to 80 MHz;
f = 80 MHz to 160 MHz
f = 160 MHz to 320 MHz
f = 320 MHz to 600 MHz
ϕ
S21
CTB
X
mod
CSO
d
2
V
o
F
I
tot
[1]
[2]
[3]
Min
21
21.5
0
-
20
18.5
17
16
20
18.5
17
16
−45
-
-
-
[1]
Typ
21.5
-
-
-
33
30
25
22.5
28.5
27.5
25
22
-
Max Unit
22
-
1.5
-
-
-
-
-
-
-
-
+45
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
deg
dB
dB
dB
dB
dBmV
dB
mA
flatness of frequency response f = 40 MHz to 600 MHz
±0.3
dB
phase response
composite triple beat
cross modulation
composite second order
distortion
second order distortion
output voltage
noise figure
total current consumption (DC)
f = 50 MHz
85 channels flat; V
o
= 44 dBmV; measured at
595.25 MHz
85 channels flat; V
o
= 44 dBmV; measured at
55.25 MHz
85 channels flat; V
o
= 44 dBmV; measured at
596.5 MHz
d
im
=
−60
dB
see
Table 5
[3]
[2]
−59.5 −58
−55.5 −53
−64
-
-
-
220
−56
−68
-
-
240
-
62.5
-
-
f
p
= 55.25 MHz; V
p
= 44 dBmV; f
q
= 541.25 MHz; V
q
= 44 dBmV; measured at f
p
+ f
q
= 596.5 MHz.
Measure according to DIN45004B;
f
p
= 590.25 MHz; V
p
= V
o
; f
q
= 597.25 MHz; V
q
= V
o
−
6 dB; f
r
= 599.25 MHz; V
r
= V
o
−
6 dB; measured at f
p
+ f
q
−
f
r
= 588.25 MHz.
The module normally operates at V
B
= 24 V, but is able to withstand supply transients up to 30 V.
9397 750 14773
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 08 — 1 April 2005
5 of 11
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