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SPI10N10

Description
10.3 A, 100 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
CategoryDiscrete semiconductor    The transistor   
File Size375KB,4 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

SPI10N10 Overview

10.3 A, 100 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA

SPI10N10 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInfineon
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresAVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)60 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage100 V
Maximum drain current (Abs) (ID)10.3 A
Maximum drain current (ID)10.3 A
Maximum drain-source on-resistance0.17 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)50 W
Maximum pulsed drain current (IDM)41.2 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Target data sheet
SPI10N10
SPP10N10,SPB10N10
Feature
SIPMOS
=
Power-Transistor
Product Summary
V
DS
R
DS(on)
I
D
P-TO262-3-1
P-TO263-3-2
N-Channel
Enhancement mode
•=175°C
operating temperature
Avalanche rated
dv/dt rated
100
180
10.3
P-TO220-3-1
V
mΩ
A
Type
SPP10N10
SPB10N10
SPI10N10
Package
Ordering Code
Marking
10N10
10N10
10N10
P-TO220-3-1 -
P-TO263-3-2 -
P-TO262-3-1 -
Maximum Ratings,at
T
j
= 25 °C, unless otherwise specified
Parameter
Continuous drain current
T
C
=25°C
T
C
=100°C
Symbol
I
D
Value
10.3
-
Unit
A
Pulsed drain current
T
C
=25°C
I
D puls
E
AS
dv/dt
V
GS
P
tot
T
j ,
T
stg
41.2
60
6
±20
50
-55... +175
55/175/56
mJ
kV/µs
V
W
°C
Avalanche energy, single pulse
I
D
=10.3 A ,
V
DD
=25V,
R
GS
=25Ω
Reverse diode dv/dt
I
S
=10.3A,
V
DS
=80V, di/dt=200A/µs,
T
jmax
=175°C
Gate source voltage
Power dissipation
T
C
=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Page 1
2001-03-16

SPI10N10 Related Products

SPI10N10 SPP10N10 SPB10N10 SPB10N10 G
Description 10.3 A, 100 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA 10.3 A, 100 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA 10.3 A, 100 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA MOSFET N-CH 100V 10.3A D2PAK
Is it Rohs certified? conform to conform to incompatible -
Maker Infineon Infineon Infineon -
Parts packaging code TO-220AB TO-262AA D2PAK -
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 PLASTIC, TO-263, 3 PIN -
Contacts 3 3 4 -
Reach Compliance Code compli unknown _compli -
ECCN code EAR99 EAR99 EAR99 -
Other features AVALANCHE RATED AVALANCE RATED AVALANCHE RATED -
Avalanche Energy Efficiency Rating (Eas) 60 mJ 60 mJ 60 mJ -
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE -
Minimum drain-source breakdown voltage 100 V 100 V 100 V -
Maximum drain current (Abs) (ID) 10.3 A 10.3 A 10.3 A -
Maximum drain current (ID) 10.3 A 10.3 A 10.3 A -
Maximum drain-source on-resistance 0.17 Ω 0.17 Ω 0.17 Ω -
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR -
JEDEC-95 code TO-220AB TO-220AB TO-263AB -
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSSO-G2 -
JESD-609 code e3 e3 e0 -
Number of components 1 1 1 -
Number of terminals 3 3 2 -
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE -
Maximum operating temperature 175 °C 175 °C 175 °C -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY -
Package shape RECTANGULAR RECTANGULAR RECTANGULAR -
Package form FLANGE MOUNT FLANGE MOUNT SMALL OUTLINE -
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED 220 -
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL -
Maximum power dissipation(Abs) 50 W 50 W 50 W -
Maximum pulsed drain current (IDM) 41.2 A 41.2 A 41.2 A -
Certification status Not Qualified Not Qualified Not Qualified -
surface mount NO NO YES -
Terminal surface Matte Tin (Sn) Matte Tin (Sn) Tin/Lead (Sn/Pb) -
Terminal form THROUGH-HOLE THROUGH-HOLE GULL WING -
Terminal location SINGLE SINGLE SINGLE -
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -
Transistor component materials SILICON SILICON SILICON -
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