SPB10N10 datasheet, PDF - EEWORLD Datasheet

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SPB10N10: Description10.3 A, 100 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA; CategoryDiscrete semiconductor The transistor; File Size375KB，4 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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SPB10N10 Overview

10.3 A, 100 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA

SPB10N10 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Infineon
Parts packaging code	D2PAK
package instruction	PLASTIC, TO-263, 3 PIN
Contacts	4
Reach Compliance Code	_compli
ECCN code	EAR99
Other features	AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)	60 mJ
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V
Maximum drain current (Abs) (ID)	10.3 A
Maximum drain current (ID)	10.3 A
Maximum drain-source on-resistance	0.17 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-263AB
JESD-30 code	R-PSSO-G2
JESD-609 code	e0
Humidity sensitivity level	1
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	220
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	50 W
Maximum pulsed drain current (IDM)	41.2 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON

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Target data sheet

SPI10N10

SPP10N10,SPB10N10

Feature

SIPMOS



Power-Transistor

Product Summary

DS(on)

P-TO262-3-1

P-TO263-3-2

•

N-Channel

•

Enhancement mode

•=175°C

operating temperature

•

Avalanche rated

•

dv/dt rated

100

180

10.3

P-TO220-3-1

mΩ

Type

SPP10N10

SPB10N10

SPI10N10

Package

Ordering Code

Marking

10N10

P-TO220-3-1 -

P-TO263-3-2 -

P-TO262-3-1 -

Maximum Ratings,at

= 25 °C, unless otherwise specified

Parameter

Continuous drain current

=25°C

=100°C

Symbol

Value

10.3

Unit

Pulsed drain current

=25°C

D puls

dv/dt

tot

j ,

stg

41.2

±20

-55... +175

55/175/56

kV/µs

°C

Avalanche energy, single pulse

=10.3 A ,

=25V,

=25Ω

Reverse diode dv/dt

=10.3A,

=80V, di/dt=200A/µs,

jmax

=175°C

Gate source voltage

Power dissipation

=25°C

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

Page 1

2001-03-16

SPB10N10 Related Products

	SPB10N10	SPP10N10	SPI10N10	SPB10N10 G
Description	10.3 A, 100 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA	10.3 A, 100 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA	10.3 A, 100 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA	MOSFET N-CH 100V 10.3A D2PAK
Is it Rohs certified?	incompatible	conform to	conform to	-
Maker	Infineon	Infineon	Infineon	-
Parts packaging code	D2PAK	TO-262AA	TO-220AB	-
package instruction	PLASTIC, TO-263, 3 PIN	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	-
Contacts	4	3	3	-
Reach Compliance Code	_compli	unknown	compli	-
ECCN code	EAR99	EAR99	EAR99	-
Other features	AVALANCHE RATED	AVALANCE RATED	AVALANCHE RATED	-
Avalanche Energy Efficiency Rating (Eas)	60 mJ	60 mJ	60 mJ	-
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	-
Minimum drain-source breakdown voltage	100 V	100 V	100 V	-
Maximum drain current (Abs) (ID)	10.3 A	10.3 A	10.3 A	-
Maximum drain current (ID)	10.3 A	10.3 A	10.3 A	-
Maximum drain-source on-resistance	0.17 Ω	0.17 Ω	0.17 Ω	-
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	-
JEDEC-95 code	TO-263AB	TO-220AB	TO-220AB	-
JESD-30 code	R-PSSO-G2	R-PSFM-T3	R-PSFM-T3	-
JESD-609 code	e0	e3	e3	-
Number of components	1	1	1	-
Number of terminals	2	3	3	-
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	-
Maximum operating temperature	175 °C	175 °C	175 °C	-
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	-
Package form	SMALL OUTLINE	FLANGE MOUNT	FLANGE MOUNT	-
Peak Reflow Temperature (Celsius)	220	NOT SPECIFIED	NOT SPECIFIED	-
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	-
Maximum power dissipation(Abs)	50 W	50 W	50 W	-
Maximum pulsed drain current (IDM)	41.2 A	41.2 A	41.2 A	-
Certification status	Not Qualified	Not Qualified	Not Qualified	-
surface mount	YES	NO	NO	-
Terminal surface	Tin/Lead (Sn/Pb)	Matte Tin (Sn)	Matte Tin (Sn)	-
Terminal form	GULL WING	THROUGH-HOLE	THROUGH-HOLE	-
Terminal location	SINGLE	SINGLE	SINGLE	-
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-
Transistor component materials	SILICON	SILICON	SILICON	-

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