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PBLS2003D

Description
20 V PNP BISS loadswitch
CategoryDiscrete semiconductor    The transistor   
File Size148KB,16 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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PBLS2003D Overview

20 V PNP BISS loadswitch

PBLS2003D Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeSC-74
package instructionPLASTIC, SC-74, 6 PIN
Contacts6
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresBUILT-IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)30
JESD-30 codeR-PDSO-G6
JESD-609 codee3
Humidity sensitivity level1
Number of components2
Number of terminals6
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN AND PNP
Maximum power dissipation(Abs)0.6 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)185 MHz
PBLS2003D
20 V PNP BISS loadswitch
Rev. 02 — 27 August 2009
Product data sheet
1. Product profile
1.1 General description
PNP low V
CEsat
Breakthrough in Small Signal (BISS) transistor and NPN Resistor-
Equipped Transistor (RET) in a SOT457 (SC-74) small Surface Mounted Device (SMD)
plastic package.
1.2 Features
I
I
I
I
I
Low V
CEsat
(BISS) and resistor-equipped transistor in one package
Low threshold voltage (< 1 V) compared to MOSFET
Low drive power required
Space-saving solution
Reduction of component count
1.3 Applications
I
I
I
I
Supply line switches
Battery charger switches
High-side switches for LEDs, drivers and backlights
Portable equipment
1.4 Quick reference data
Table 1.
Symbol
V
CEO
I
C
R
CEsat
Quick reference data
Parameter
collector-emitter voltage
collector current (DC)
collector-emitter saturation
resistance
collector-emitter voltage
output current
bias resistor 1 (input)
bias resistor ratio
I
C
=
−1
A;
I
B
=
−100
mA
open base
[1]
Conditions
open base
Min
-
-
-
Typ
-
-
185
Max
−20
−1
280
Unit
V
A
mΩ
TR1; PNP low V
CEsat
transistor
TR2; NPN resistor-equipped transistor
V
CEO
I
O
R1
R2/R1
[1]
-
-
7
0.8
-
-
10
1
50
100
13
1.2
V
mA
kΩ
Pulse test: t
p
300
µs; δ ≤
0.02

PBLS2003D Related Products

PBLS2003D PBLS2003D,115
Description 20 V PNP BISS loadswitch 20 V PNP BISS loadswitch
Is it Rohs certified? conform to conform to
Parts packaging code SC-74 TSOP
package instruction PLASTIC, SC-74, 6 PIN PLASTIC, SC-74, 6 PIN
Contacts 6 6
Reach Compliance Code compliant compli
ECCN code EAR99 EAR99
Other features BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC) 0.1 A 0.1 A
Collector-emitter maximum voltage 50 V 50 V
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 30 30
JESD-30 code R-PDSO-G6 R-PDSO-G6
JESD-609 code e3 e3
Humidity sensitivity level 1 1
Number of components 2 2
Number of terminals 6 6
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260
Polarity/channel type NPN AND PNP NPN AND PNP
Maximum power dissipation(Abs) 0.6 W 0.6 W
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface Tin (Sn) Tin (Sn)
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
Maximum time at peak reflow temperature 30 40
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 185 MHz 185 MHz
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