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PBRP123YT

Description
PNP 800 mA, 40 V BISS RET; R1 = 2.2 kW, R2 = 10 kW
CategoryDiscrete semiconductor    The transistor   
File Size105KB,12 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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PBRP123YT Overview

PNP 800 mA, 40 V BISS RET; R1 = 2.2 kW, R2 = 10 kW

PBRP123YT Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeSOT-23
package instructionPLASTIC, SMD, 3 PIN
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresBUILT-IN BIAS RESISTOR RATIO IS 4.55
Maximum collector current (IC)0.6 A
Collector-emitter maximum voltage40 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)190
JEDEC-95 codeTO-236AB
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Maximum power dissipation(Abs)0.57 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
PBRP123YT
PNP 800 mA, 40 V BISS RET; R1 = 2.2 kΩ, R2 = 10 kΩ
Rev. 01 — 17 December 2007
Product data sheet
1. Product profile
1.1 General description
800 mA PNP low V
CEsat
Breakthrough In Small Signal (BISS) Resistor-Equipped
Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic
package.
NPN complement: PBRN123YT.
1.2 Features
I
800 mA repetitive peak output current
I
High current gain h
FE
I
Built-in bias resistors
I
Simplifies circuit design
I
Low collector-emitter saturation voltage
V
CEsat
I
Reduces component count
I
Reduces pick and place costs
I
±10
% resistor ratio tolerance
1.3 Applications
I
Digital application in automotive and
industrial segments
I
Medium current peripheral driver
I
Switching loads
1.4 Quick reference data
Table 1.
Symbol
V
CEO
I
O
I
ORM
R1
R2/R1
[1]
[2]
[3]
Quick reference data
Parameter
collector-emitter voltage
output current
repetitive peak output current t
p
1 ms;
δ ≤
0.33
bias resistor 1 (input)
bias resistor ratio
Conditions
open base
[1][2]
[3]
Min
-
-
-
1.54
4.1
Typ
-
-
-
2.2
4.55
Max
−40
−600
−800
2.86
5
Unit
V
mA
mA
kΩ
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
collector 1 cm
2
.
Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

PBRP123YT Related Products

PBRP123YT PBRP123YT,215
Description PNP 800 mA, 40 V BISS RET; R1 = 2.2 kW, R2 = 10 kW PNP 800 mA, 40 V BISS RET; R1 = 2.2 kOhm, R2 = 10 kOhm
Is it Rohs certified? conform to conform to
Maker NXP NXP
Parts packaging code SOT-23 TO-236
package instruction PLASTIC, SMD, 3 PIN PLASTIC, SMD, 3 PIN
Contacts 3 3
Reach Compliance Code compli compli
ECCN code EAR99 EAR99
Other features BUILT-IN BIAS RESISTOR RATIO IS 4.55 BUILT-IN BIAS RESISTOR RATIO IS 4.55
Maximum collector current (IC) 0.6 A 0.6 A
Collector-emitter maximum voltage 40 V 40 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 190 190
JEDEC-95 code TO-236AB TO-236AB
JESD-30 code R-PDSO-G3 R-PDSO-G3
JESD-609 code e3 e3
Humidity sensitivity level 1 1
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260
Polarity/channel type PNP PNP
Maximum power dissipation(Abs) 0.57 W 0.57 W
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface Tin (Sn) Tin (Sn)
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
Maximum time at peak reflow temperature 30 40
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
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