PBRP123YT,215 datasheet, PDF - EEWORLD Datasheet

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PBRP123YT,215: DescriptionPNP 800 mA, 40 V BISS RET; R1 = 2.2 kOhm, R2 = 10 kOhm; CategoryDiscrete semiconductor The transistor; File Size105KB，12 Pages; ManufacturerNXP; Websitehttps://www.nxp.com; Environmental Compliance

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PBRP123YT,215 Overview

PNP 800 mA, 40 V BISS RET; R1 = 2.2 kOhm, R2 = 10 kOhm

PBRP123YT,215 Parametric

Parameter Name	Attribute value
Brand Name	NXP Semiconduc
Is it Rohs certified?	conform to
Maker	NXP
Parts packaging code	TO-236
package instruction	PLASTIC, SMD, 3 PIN
Contacts	3
Manufacturer packaging code	SOT23
Reach Compliance Code	compli
ECCN code	EAR99
Other features	BUILT-IN BIAS RESISTOR RATIO IS 4.55
Maximum collector current (IC)	0.6 A
Collector-emitter maximum voltage	40 V
Configuration	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	190
JEDEC-95 code	TO-236AB
JESD-30 code	R-PDSO-G3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.57 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON

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PBRP123YT

PNP 800 mA, 40 V BISS RET; R1 = 2.2 kΩ, R2 = 10 kΩ

Rev. 01 — 17 December 2007

Product data sheet

1. Product proﬁle

1.1 General description

800 mA PNP low V

CEsat

Breakthrough In Small Signal (BISS) Resistor-Equipped

Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic

package.

NPN complement: PBRN123YT.

1.2 Features

800 mA repetitive peak output current

High current gain h

Built-in bias resistors

Simpliﬁes circuit design

Low collector-emitter saturation voltage

CEsat

Reduces component count

Reduces pick and place costs

±10

% resistor ratio tolerance

1.3 Applications

Digital application in automotive and

industrial segments

Medium current peripheral driver

Switching loads

1.4 Quick reference data

Table 1.

Symbol

CEO

ORM

R2/R1

[1]

[2]

[3]

Quick reference data

Parameter

collector-emitter voltage

output current

repetitive peak output current t

≤

1 ms;

δ ≤

0.33

bias resistor 1 (input)

bias resistor ratio

Conditions

open base

[1][2]

[3]

Min

1.54

4.1

Typ

2.2

4.55

Max

−40

−600

−800

2.86

Unit

kΩ

Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for

collector 1 cm

Device mounted on a ceramic PCB, Al

, standard footprint.

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

PBRP123YT,215 Related Products

	PBRP123YT,215	PBRP123YT
Description	PNP 800 mA, 40 V BISS RET; R1 = 2.2 kOhm, R2 = 10 kOhm	PNP 800 mA, 40 V BISS RET; R1 = 2.2 kW, R2 = 10 kW
Is it Rohs certified?	conform to	conform to
Maker	NXP	NXP
Parts packaging code	TO-236	SOT-23
package instruction	PLASTIC, SMD, 3 PIN	PLASTIC, SMD, 3 PIN
Contacts	3	3
Reach Compliance Code	compli	compli
ECCN code	EAR99	EAR99
Other features	BUILT-IN BIAS RESISTOR RATIO IS 4.55	BUILT-IN BIAS RESISTOR RATIO IS 4.55
Maximum collector current (IC)	0.6 A	0.6 A
Collector-emitter maximum voltage	40 V	40 V
Configuration	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	190	190
JEDEC-95 code	TO-236AB	TO-236AB
JESD-30 code	R-PDSO-G3	R-PDSO-G3
JESD-609 code	e3	e3
Humidity sensitivity level	1	1
Number of components	1	1
Number of terminals	3	3
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	260
Polarity/channel type	PNP	PNP
Maximum power dissipation(Abs)	0.57 W	0.57 W
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal surface	Tin (Sn)	Tin (Sn)
Terminal form	GULL WING	GULL WING
Terminal location	DUAL	DUAL
Maximum time at peak reflow temperature	40	30
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON

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