DISCRETE SEMICONDUCTORS
DATA SHEET
M3D744
PBSS2515VPN
15 V low V
CE(sat)
NPN/PNP
transistor
Product data sheet
Supersedes data of 2001 Nov 07
2005 Jan 11
NXP Semiconductors
Product data sheet
15 V low V
CE(sat)
NPN/PNP transistor
FEATURES
•
300 mW total power dissipation
•
Very small 1.6
×
1.2 mm ultra thin package
•
Excellent coplanarity due to straight leads
•
Low collector-emitter saturation voltage
•
High current capability
•
Improved thermal behaviour due to flat lead
•
Replaces two SC75/SC89 packaged low V
CEsat
transistors on same PCB area
•
Reduces required PCB area
•
Reduced pick and place costs.
APPLICATION
•
General purpose switching and muting
•
Low frequency driver circuits
•
LCD backlighting
•
Audio frequency general purpose amplifier applications
•
Battery driven equipment (mobile phones, video
cameras and hand-held devices).
handbook, halfpage
6
PBSS2515VPN
QUICK REFERENCE DATA
SYMBOL
V
CEO
I
CM
R
CEsat
PINNING
PIN
1, 4
2, 5
6, 3
emitter
base
collector
DESCRIPTION
TR1; TR2
TR1; TR2
TR1; TR2
PARAMETER
collector-emitter voltage
peak collector current
equivalent on-resistance
MAX.
15
1
<500
UNIT
V
A
mΩ
5
4
6
5
4
TR2
TR1
DESCRIPTION
NPN/PNP low V
CEsat
transistor pair in a SOT666 plastic
package.
MARKING
TYPE NUMBER
PBSS2515VPN
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
PBSS2515VPN
−
DESCRIPTION
plastic surface mounted package; 6 leads
VERSION
SOT666
MARKING CODE
N8
Fig.1
Simplified outline (SOT666) and symbol.
1
Top view
2
3
1
MAM443
2
3
2005 Jan 11
2
NXP Semiconductors
Product data sheet
15 V low V
CE(sat)
NPN/PNP transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
−
−
−
−
−
−
T
amb
≤
25
°C;
note 1
−
−65
−
−65
T
amb
≤
25
°C;
note 1
−
PBSS2515VPN
MIN.
MAX.
UNIT
Per transistor; for the PNP transistor with negative polarity
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Per device
P
tot
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL
R
th(j-a)
Notes
1. Transistor mounted on an FR4 printed-circuit board.
2. The only recommended soldering method is reflow soldering.
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
notes 1 and 2
VALUE
416
UNIT
K/W
total power dissipation
300
mW
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
15
15
6
500
1
100
200
+150
150
+150
V
V
V
mA
A
mA
mW
°C
°C
°C
2005 Jan 11
3
NXP Semiconductors
Product data sheet
15 V low V
CE(sat)
NPN/PNP transistor
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
−
−
−
200
150
90
−
−
−
−
−
−
PBSS2515VPN
TYP.
−
−
−
−
−
−
−
−
−
300
−
−
MAX.
UNIT
Per transistor; for the PNP transistor with negative polarity
I
CBO
I
EBO
h
FE
collector-base cut-off current
emitter-base cut-off current
DC current gain
V
CB
= 15 V; I
E
= 0 A
V
CB
= 15 V; I
E
= 0 A; T
j
= 150
°C
V
EB
= 5 V; I
C
= 0 A
V
CE
= 2 V; I
C
= 10 mA
V
CE
= 2 V; I
C
= 100 mA; note 1
V
CE
= 2 V; I
C
= 500 mA; note 1
V
CEsat
collector-emitter saturation
voltage
I
C
= 10 mA; I
B
= 0.5 mA
I
C
= 200 mA; I
B
= 10 mA
I
C
= 500 mA; I
B
= 50 mA; note 1
R
CEsat
V
BEsat
V
BE
f
T
C
c
f
T
C
c
Note
1. Pulse test: t
p
≤
300
μs; δ ≤
0.02.
equivalent on-resistance
base-emitter saturation voltage
base-emitter turn-on voltage
I
C
= 500 mA; I
B
= 50 mA; note 1
I
C
= 500 mA; I
B
= 50 mA; note 1
V
CE
= 2 V; I
C
= 100 mA; note 1
I
C
= 100 mA; V
CE
= 5 V; f = 100 MHz
V
CB
= 10 V; I
E
= I
e
= 0 A; f = 1MHz
I
C
=
−100
mA; V
CE
=
−5
V;
f = 100 MHz
V
CB
=
−10
V; I
E
= I
e
= 0 A; f = 1MHz
100
50
100
−
−
−
25
150
250
<500
1.1
0.9
−
6
−
10
mV
mV
mV
mΩ
V
V
nA
μA
nA
NPN transistor
transition frequency
collector capacitance
250
−
420
4.4
MHz
pF
PNP transistor
transition frequency
collector capacitance
100
−
280
−
MHz
pF
2005 Jan 11
4
NXP Semiconductors
Product data sheet
15 V low V
CE(sat)
NPN/PNP transistor
PBSS2515VPN
handbook, halfpage
(1)
600
MLD643
1200
handbook, halfpage
VBE
(mV)
1000
(1)
MLD645
hFE
400
(2)
800
(2)
600
200
(3)
(3)
400
0
10
−1
1
10
10
2
IC (mA)
10
3
200
10
−1
1
10
10
2
IC (mA)
10
3
TR1 (NPN)
V
CE
= 2 V.
(1) T
amb
= 150
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−55 °C.
TR1 (NPN)
V
CE
= 2 V.
(1) T
amb
=
−55 °C.
(2) T
amb
= 25
°C.
(3) T
amb
= 150
°C.
Fig.2
DC current gain as a function of collector
current; typical values.
Fig.3
Base-emitter voltage as a function of
collector current; typical values.
10
3
handbook, halfpage
VCEsat
(mV)
10
2
MLD647
handbook, halfpage
1200
MLD646
VBEsat
(mV)
1000
(1)
800
(2)
(1)
(2)
600
10
(3)
(3)
400
1
10
−1
1
10
10
2
IC (mA)
10
3
200
10
−1
1
10
10
2
IC (mA)
10
3
TR1 (NPN)
I
C
/I
B
= 20.
(1) T
amb
= 150
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−55 °C.
TR1 (NPN)
I
C
/I
B
= 20.
(1) T
amb
= 150
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−55 °C.
Fig.4
Collector-emitter saturation voltage as a
function of collector current; typical values.
Fig.5
Base-emitter saturation voltage as a
function of collector current; typical values.
2005 Jan 11
5
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