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PBSS4140V

Description
40 V low VCEsat NPN transistor
CategoryDiscrete semiconductor    The transistor   
File Size75KB,9 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
Download Datasheet Parametric Compare View All

PBSS4140V Overview

40 V low VCEsat NPN transistor

PBSS4140V Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerNXP
package instruction1.60 X 1.20 MM, 0.55 MM HEIGHT, PLASTIC PACKAGE-6
Contacts6
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)1 A
Collector-emitter maximum voltage40 V
ConfigurationSINGLE
Minimum DC current gain (hFE)200
JESD-30 codeR-PDSO-F6
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals6
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.25 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D744
PBSS4140V
40 V low V
CEsat
NPN transistor
Product data sheet
Supersedes data of 2001 Nov 05
2002 Jun 20

PBSS4140V Related Products

PBSS4140V PBSS4140V,115
Description 40 V low VCEsat NPN transistor 40 V low VCEsat NPN transistor
Is it Rohs certified? conform to conform to
Maker NXP NXP
package instruction 1.60 X 1.20 MM, 0.55 MM HEIGHT, PLASTIC PACKAGE-6 1.60 X 1.20 MM, 0.55 MM HEIGHT, PLASTIC PACKAGE-6
Contacts 6 6
Reach Compliance Code unknow unknow
ECCN code EAR99 EAR99
Maximum collector current (IC) 1 A 1 A
Collector-emitter maximum voltage 40 V 40 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 200 200
JESD-30 code R-PDSO-F6 R-PDSO-F6
JESD-609 code e3 e3
Humidity sensitivity level 1 1
Number of components 1 1
Number of terminals 6 6
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 NOT SPECIFIED
Polarity/channel type NPN NPN
Maximum power dissipation(Abs) 0.25 W 0.25 W
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface Tin (Sn) Tin (Sn)
Terminal form FLAT FLAT
Terminal location DUAL DUAL
Maximum time at peak reflow temperature 30 NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 150 MHz 150 MHz
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