DISCRETE SEMICONDUCTORS
DATA SHEET
M3D744
PBSS5140V
40 V low V
CEsat
PNP transistor
Product data sheet
Supersedes data of 2001 Oct 19
2002 Mar 20
NXP Semiconductors
Product data sheet
40 V low V
CEsat
PNP transistor
FEATURES
•
300 mW total power dissipation
•
Very small 1.6 mm
×
1.2 mm
×
0.55 mm ultra thin
package
•
Improved thermal behaviour due to flat leads
•
Self alignment during soldering due to straight leads
•
Low collector-emitter saturation voltage
•
High current capability
APPLICATIONS
•
General purpose switching and muting
•
LCD back lighting
•
Supply line switching circuits
•
Battery driven equipment (mobile phones, video
cameras and hand-held devices).
DESCRIPTION
PNP low V
CE sat
transistor in a SOT666 plastic package.
NPN complement: PBSS4140V.
MARKING
handbook, halfpage
PBSS5140V
QUICK REFERENCE DATA
SYMBOL
V
CEO
I
C
I
CM
R
CEsat
PINNING
PIN
1
2
3
4
5
6
DESCRIPTION
collector
collector
base
emitter
collector
collector
PARAMETER
collector-emitter voltage
collector current (DC)
peak collector current
MAX.
−40
−1
−2
UNIT
V
A
A
mΩ
equivalent on-resistance <340
6
5
4
1, 2, 5, 6
3
TYPE NUMBER
PBSS5140V
25
MARKING CODE
4
1
Top view
2
3
MAM446
Fig.1 Simplified outline (SOT666) and symbol.
2002 Mar 20
2
NXP Semiconductors
Product data sheet
40 V low V
CEsat
PNP transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
T
amb
Notes
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
T
amb
≤
25
°C;
note 2
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
−
−
−
−65
−
−65
MIN.
PBSS5140V
MAX.
−40
−40
−5
−1
−2
−300
−1
300
500
+150
150
+150
UNIT
V
V
V
A
A
mA
A
mW
mW
°C
°C
°C
1. Device mounted on a printed-circuit board, single side copper, tinplated and standard footprint.
2. Device mounted on a printed-circuit board, single side copper, tinplated and mounting pad for collector 1 cm
2
.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
PARAMETER
thermal resistance from junction to ambient
note 1
note 2
Notes
1. Device mounted on a printed-circuit board, single side copper, tinplated and standard footprint.
2. Device mounted on a printed-circuit board, single side copper, tinplated and mounting pad for collector 1 cm
2
.
Soldering
The only recommended soldering is reflow soldering.
CONDITIONS
VALUE
410
215
UNIT
K/W
K/W
2002 Mar 20
3
NXP Semiconductors
Product data sheet
40 V low V
CEsat
PNP transistor
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
CEO
I
EBO
h
FE
PARAMETER
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
CONDITIONS
V
CB
=
−40
V; I
E
= 0
V
CE
=
−30
V; I
B
= 0
V
EB
=
−5
V; I
C
= 0
V
CE
=
−5
V; I
C
=
−1
mA
V
CE
=
−5
V; I
C
=
−100
mA
V
CE
=
−5
V; I
C
=
−500
mA
V
CE
=
−5
V; I
C
=
−1
A
V
CEsat
collector-emitter saturation voltage I
C
=
−100
mA; I
B
=
−1
mA
I
C
=
−500
mA; I
B
=
−50
mA
I
C
=
−1
A; I
B
=
−100
mA
R
CEsat
V
BEsat
V
BEon
f
T
C
c
Note
1. Pulse test: t
p
≤
300
μs; δ ≤
0.02.
equivalent on-resistance
base-emitter saturation voltage
base-emitter turn-on voltage
transition frequency
collector capacitance
I
C
=
−1
A; I
B
=
−50
mA
V
CE
=
−5
V; I
C
=
−1
A
I
C
=
−50
mA; V
CE
=
−10
V;
f = 100 MHz
MIN.
−
−
−
300
300
250
160
−
−
−
−
−
150
PBSS5140V
TYP.
−
−
−
−
−
−
−
−
−80
−120
−200
240
−
−
−
−
MAX.
−100
−50
−100
−100
−
800
−
−
−140
−170
−310
<340
−1.1
−1
−
12
UNIT
nA
μA
nA
nA
V
CB
=
−40
V; I
E
= 0; T
amb
= 150
°C −
mV
mV
mV
mΩ
V
V
MHz
pF
I
C
=
−500
mA; I
B
=
−50
mA; note 1
−
V
CB
=
−10
V; I
E
= I
e
= 0; f = 1 MHz
−
2002 Mar 20
4
NXP Semiconductors
Product data sheet
40 V low V
CEsat
PNP transistor
PACKAGE OUTLINE
PBSS5140V
Plastic surface mounted package; 6 leads
SOT666
D
A
E
X
S
Y S
HE
6
5
4
pin 1 index
A
1
e1
e
2
bp
3
w
M
A
Lp
detail X
c
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
0.6
0.5
b
p
0.27
0.17
c
0.18
0.08
D
1.7
1.5
E
1.3
1.1
e
1.0
e
1
0.5
H
E
1.7
1.5
L
p
0.3
0.1
w
0.1
y
0.1
OUTLINE
VERSION
SOT666
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
01-01-04
01-08-27
2002 Mar 20
5
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