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PBSS5140V,115

Description
40 V low VCEsat PNP transistor
CategoryDiscrete semiconductor    The transistor   
File Size57KB,7 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
Download Datasheet Parametric Compare View All

PBSS5140V,115 Overview

40 V low VCEsat PNP transistor

PBSS5140V,115 Parametric

Parameter NameAttribute value
Brand NameNXP Semiconduc
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeSOT
package instruction1.60 X 1.20 MM, 0.55 MM HEIGHT, ULTRA THIN, PLASTIC PACKAGE-6
Contacts6
Manufacturer packaging codeSOT666
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)1 A
Collector-emitter maximum voltage40 V
ConfigurationSINGLE
Minimum DC current gain (hFE)160
JESD-30 codeR-PDSO-F6
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals6
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power dissipation(Abs)0.3 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D744
PBSS5140V
40 V low V
CEsat
PNP transistor
Product data sheet
Supersedes data of 2001 Oct 19
2002 Mar 20

PBSS5140V,115 Related Products

PBSS5140V,115 PBSS5140V,315 PBSS5140V
Description 40 V low VCEsat PNP transistor 40 V low VCEsat PNP transistor 40 V low VCEsat PNP transistor
Is it Rohs certified? conform to conform to conform to
Maker NXP NXP NXP
package instruction 1.60 X 1.20 MM, 0.55 MM HEIGHT, ULTRA THIN, PLASTIC PACKAGE-6 1.60 X 1.20 MM, 0.55 MM HEIGHT, ULTRA THIN, PLASTIC PACKAGE-6 1.60 X 1.20 MM, 0.55 MM HEIGHT, ULTRA THIN, PLASTIC PACKAGE-6
Contacts 6 6 6
Reach Compliance Code unknow unknow unknow
Brand Name NXP Semiconduc NXP Semiconduc -
Parts packaging code SOT SOT -
Manufacturer packaging code SOT666 SOT666 -
ECCN code EAR99 - EAR99
Maximum collector current (IC) 1 A - 1 A
Collector-emitter maximum voltage 40 V - 40 V
Configuration SINGLE - SINGLE
Minimum DC current gain (hFE) 160 - 160
JESD-30 code R-PDSO-F6 - R-PDSO-F6
JESD-609 code e3 - e3
Humidity sensitivity level 1 - 1
Number of components 1 - 1
Number of terminals 6 - 6
Maximum operating temperature 150 °C - 150 °C
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR
Package form SMALL OUTLINE - SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED - 260
Polarity/channel type PNP - PNP
Maximum power dissipation(Abs) 0.3 W - 0.3 W
Certification status Not Qualified - Not Qualified
surface mount YES - YES
Terminal surface Tin (Sn) - Tin (Sn)
Terminal form FLAT - FLAT
Terminal location DUAL - DUAL
Maximum time at peak reflow temperature NOT SPECIFIED - 30
transistor applications SWITCHING - SWITCHING
Transistor component materials SILICON - SILICON
Nominal transition frequency (fT) 150 MHz - 150 MHz
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