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PBV1632S-3DBN1-T

Description
CAPACITOR, CERAMIC, MULTILAYER, 10 - 2000 V, SURFACE MOUNT, 1206
CategoryPassive components   
File Size46KB,1 Pages
ManufacturerETC1
Download Datasheet Parametric View All

PBV1632S-3DBN1-T Overview

CAPACITOR, CERAMIC, MULTILAYER, 10 - 2000 V, SURFACE MOUNT, 1206

PBV1632S-3DBN1-T Parametric

Parameter NameAttribute value
Maximum operating temperature125 Cel
Minimum operating temperature-55 Cel
Processing package descriptionCHIP
stateACTIVE
terminal coatingMATTE TIN
Installation featuresSURFACE MOUNT
Manufacturer SeriesPBV1632S-3DBN1-T
size codePBV1632S-3DBN1-T
packaging shapeRECTANGULAR PACKAGE
Capacitor typeCERAMIC
Terminal shapeWRAPAROUND
multi-layerYes
P*V series, thermal sensitive
chip attenuators.
These thermo-variable attenuators have opposite temperature characteristics of
GaAs MOSFET amplifiers and compensate the temperature caused gain fluctuation
of such amplifiers.
RoHS compliant
SPECIFICATIONS
Mechanical
PXV1220S
(0805)
2.0 0.2
0.55 0.25
1.0 0.2
0.4 0.2
PBV1632S
(1206)
3.2 0.2
Top side
1.60 0.2
0.4 0.2
0.4 0.2
3.2 0.2
back side
0.4 0.1
(dimension:mm)
1.5max
1.25 0.2
0.65 0.70 0.65
0.35 0.2 0.35
0.35 0.2
0.55 0.2
0.35 0.2
0.9 0.2
Equivalent
circuit
Electrical
PXV1220S
PBV1632S
Attenuation
1, 2, 3, 4, 5, 6, 7, 8, 9, 10dB
1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 16dB
Attenuation tolerance
0.5dB(@25 C, no load)
Impedance
50
VSWR
1.3 or less
ex : 6dB
N1 0.0119dB/dB* C N5 0.0041dB/dB* C
N1 N8
N2 0.0088dB/dB* C N6 0.0035dB/dB* C
Temperature coefficient
(Nin types available for
of Attenuation
N3 0.0062dB/dB* C N7 0.0026dB/dB* C
1 to 3 dB)
N4 0.0047dB/dB* C N8 0.0019dB/dB* C
Type
Frequency Range
Power Rating
Operating Temp. Range
Package
DC
63mW
3GHz
100mW
40 C
100 C
100pcs/package 1,000pcs/reel min.20pcs/package 1,000pcs/reel
Contact us for data book in details.
PART NUMBER
PXV 1220S - 6dB
N1 - T
Package(T=Tape, B=Bulk)
Temperature coefficient of Attenuation
Attenuation
Dimensions
Part Code
“Not
for shipment to or sale in the United States”
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