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BGA427H6327

Description
RF Amp Single MMIC Amp 3GHz 5V 4-Pin(3+Tab) SOT-343
File Size532KB,7 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

BGA427H6327 Overview

RF Amp Single MMIC Amp 3GHz 5V 4-Pin(3+Tab) SOT-343

BGA427H6327 Parametric

Parameter NameAttribute value
EU restricts the use of certain hazardous substancesCompliant
ECCN (US)EAR99
Part StatusUnconfirmed
Manufacturer TypeMMIC Amplifier
Number of Channels per Chip1
Maximum Operating Frequency (MHz)3000
Typical Power Gain (dB)18.5@1800MHz
Typical Output Intercept Point (dBm)7@1800MHz
Maximum Reverse Isolation (dB)22(Typ)@1800MHz
Maximum Input Return Loss (dB)12(Typ)@1800MHz
Maximum Output Return Loss (dB)9(Typ)@1800MHz
Typical Noise Figure (dB)2.2@1800MHz
Maximum Operating Supply Voltage (V)5
Minimum Single Supply Voltage (V)2
Typical Single Supply Voltage (V)3
Maximum Single Supply Voltage (V)5
Maximum Supply Current (mA)25
Power Supply TypeSingle
Maximum Power Dissipation (mW)150
Minimum Operating Temperature (°C)-65
Maximum Operating Temperature (°C)150
Pin Count4
Standard Package NameSOT-343
Supplier PackageSOT-343
MountingSurface Mount
Package Height0.9(Max)
Package Length2
Package Width1.25
PCB changed3
TabTab
Lead ShapeGull-wing
BGA427
Si-MMIC-Amplifier
in SIEGET
25-Technologie
Cascadable 50
Ω-gain
block
Unconditionally stable
Gain |S
21
|
2
= 18.5 dB at 1.8 GHz (Appl.1)
gain |S
21
|
2
= 22 dB at 1.8 GHz (Appl.2)
IP
3out
= +7 dBm at 1.8 GHz (V
D
=3V,
I
D
=9.4mA)
Noise figure
NF
= 2.2 dB at 1.8 GHz
Typical device voltage
V
D
= 2 V to 5 V
Reverse isolation
>
35 dB (Appl.2)
Pb-free (RoHS compliant) package
4
OUT
3
+
V
3
4
1
2
Circuit Diagram
IN
1
2
GND
EHA07378
ESD
(
E
lectro
s
tatic
d
ischarge) sensitive device, observe handling precaution!
Type
BGA427
Maximum Ratings
Parameter
Device current
Device voltage
Total power dissipation
T
S
= 120 °C
RF input power
Junction temperature
Marking
BMs
1, IN
Pin Configuration
2, GND 3, +V
4, Out
Package
SOT343
Symbol
I
D
V
D
,+V
P
tot
P
RFin
T
j
T
A
T
stg
Value
25
6
150
-10
150
-65 ... 150
-65 ... 150
Unit
mA
V
mW
dBm
°C
Ambient temperature range
Storage temperature range
Thermal Resistance
Junction - soldering point
1)
1
For
R
thJS
295
K/W
calculation of
R
thJA
please refer to Application Note Thermal Resistance
1
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