PDTC114E datasheet, PDF - EEWORLD Datasheet

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PDTC114E: DescriptionNPN resistor-equipped transistor; Categorysemiconductor Discrete semiconductor; File Size98KB，14 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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PDTC114E Overview

NPN resistor-equipped transistor

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DISCRETE SEMICONDUCTORS

DATA SHEET

PDTC114E series

NPN resistor-equipped transistor;

R1 = 10 kΩ, R2 = 10 kΩ

Product data sheet

Supersedes data of 2003 Apr 10

2004 Aug 05

PDTC114E Related Products

	PDTC114E	PDTC114EEF	PDTC114EK	PDTC114ES	PDTC114EU
Description	NPN resistor-equipped transistor	NPN resistor-equipped transistor	NPN resistor-equipped transistor	NPN resistor-equipped transistor	100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Is it Rohs certified?	-	conform to	conform to	conform to	conform to
Maker	-	NXP	NXP	NXP	NXP
Parts packaging code	-	SC-89	SOT-23	TO-92	SC-70
package instruction	-	PLASTIC, SC-89, 3 PIN	PLASTIC, SC-59A, 3 PIN	PLASTIC, SC-43A, 3 PIN	PLASTIC, SC-70, 3 PIN
Contacts	-	3	3	3	3
Reach Compliance Code	-	unknow	unknow	unknow	compli
ECCN code	-	EAR99	EAR99	EAR99	EAR99
Other features	-	BUILT IN BIAS RESISTANCE RATIO IS 1	BUILT IN BIAS RESISTANCE RATIO IS 1	BUILT IN BIAS RESISTANCE RATIO IS 1	BUILT IN BIAS RESISTANCE RATIO IS 1
Maximum collector current (IC)	-	0.1 A	0.1 A	0.1 A	0.1 A
Collector-emitter maximum voltage	-	50 V	50 V	50 V	50 V
Configuration	-	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	-	30	30	30	30
JESD-30 code	-	R-PDSO-F3	R-PDSO-G3	O-PBCY-T3	R-PDSO-G3
JESD-609 code	-	e3	e3	e3	e3
Number of components	-	1	1	1	1
Number of terminals	-	3	3	3	3
Package body material	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	-	RECTANGULAR	RECTANGULAR	ROUND	RECTANGULAR
Package form	-	SMALL OUTLINE	SMALL OUTLINE	CYLINDRICAL	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	-	NOT SPECIFIED	260	NOT SPECIFIED	260
Polarity/channel type	-	NPN	NPN	NPN	NPN
Maximum power dissipation(Abs)	-	0.25 W	0.25 W	0.5 W	0.2 W
Certification status	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	-	YES	YES	NO	YES
Terminal surface	-	Tin (Sn)	Tin (Sn)	Matte Tin (Sn)	Tin (Sn)
Terminal form	-	FLAT	GULL WING	THROUGH-HOLE	GULL WING
Terminal location	-	DUAL	DUAL	BOTTOM	DUAL
Maximum time at peak reflow temperature	-	NOT SPECIFIED	40	NOT SPECIFIED	30
transistor applications	-	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	-	SILICON	SILICON	SILICON	SILICON

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