DISCRETE SEMICONDUCTORS
DATA SHEET
PDTC114E series
NPN resistor-equipped transistor;
R1 = 10 kΩ, R2 = 10 kΩ
Product data sheet
Supersedes data of 2003 Apr 10
2004 Aug 05
NXP Semiconductors
Product data sheet
NPN resistor-equipped transistor;
R1 = 10 kΩ, R2 = 10 kΩ
FEATURES
•
Built-in bias resistors
•
Simplified circuit design
•
Reduction of component count
•
Reduced pick and place costs.
APPLICATIONS
•
General purpose switching and amplification
•
Inverter and interface circuits
•
Circuit driver.
DESCRIPTION
PDTC114E series
QUICK REFERENCE DATA
SYMBOL
V
CEO
I
O
R1
R2
PARAMETER
collector-emitter
voltage
output current (DC)
bias resistor
bias resistor
TYP.
−
−
10
10
MAX.
50
100
−
−
UNIT
V
mA
kΩ
kΩ
NPN resistor-equipped transistor (see “Simplified outline,
symbol and pinning” for package details).
PRODUCT OVERVIEW
PACKAGE
TYPE NUMBER
PHILIPS
PDTC114EE
PDTC114EEF
PDTC114EK
PDTC114EM
PDTC114ES
PDTC114ET
PDTC114EU
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
SOT416
SOT490
SOT346
SOT883
SOT54 (TO-92)
SOT23
SOT323
EIAJ
SC-75
SC-89
SC-59
SC-101
SC-43
−
SC-70
09
09
04
DS
TC114E
*16
(1)
*09
(1)
PDTA114EE
PDTA114EEF
PDTA114EK
PDTA114EM
PDTA114ES
PDTA114ET
PDTA114EU
MARKING CODE
PNP COMPLEMENT
2004 Aug 05
2
NXP Semiconductors
Product data sheet
NPN resistor-equipped transistor;
R1 = 10 kΩ, R2 = 10 kΩ
SIMPLIFIED OUTLINE, SYMBOL AND PINNING
PDTC114E series
PINNING
TYPE NUMBER
PDTC114ES
handbook, halfpage
SIMPLIFIED OUTLINE AND SYMBOL
PIN
1
2
2
R1
1
R2
3
MAM364
DESCRIPTION
base
collector
emitter
1
2
3
3
PDTC114EE
PDTC114EEF
PDTC114EK
PDTC114ET
PDTC114EU
1
Top view
2
MDB269
1
2
handbook, halfpage
base
emitter
collector
3
R1
1
R2
3
3
2
PDTC114EM
handbook, halfpage
1
2
3
R1
1
3
1
bottom view
MHC506
base
emitter
collector
3
2
R2
2
2004 Aug 05
3
NXP Semiconductors
Product data sheet
NPN resistor-equipped transistor;
R1 = 10 kΩ, R2 = 10 kΩ
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
V
CEO
V
EBO
V
I
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
positive
negative
I
O
I
CM
P
tot
output current (DC)
peak collector current
total power dissipation
SOT54
SOT23
SOT346
SOT323
SOT416
SOT490
SOT883
T
stg
T
j
T
amb
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60
μm
copper strip line.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
SOT54
SOT23
SOT346
SOT323
SOT416
SOT490
SOT883
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60
μm
copper strip line.
2004 Aug 05
4
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
in free air
note 1
note 1
note 1
note 1
note 1
notes 1 and 2
notes 2 and 3
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C
note 1
note 1
note 1
note 1
note 1
notes 1 and 2
notes 2 and 3
−
−
−
−
−
−
−
−
−
−
−
CONDITIONS
open emitter
open base
open collector
−
−
−
PDTC114E series
MIN.
MAX.
50
50
10
+40
−10
100
100
500
250
250
200
150
250
250
+150
150
+150
V
V
V
V
V
UNIT
mA
mA
mW
mW
mW
mW
mW
mW
mW
°C
°C
°C
−65
−
−65
VALUE
250
500
500
625
833
500
500
UNIT
K/W
K/W
K/W
K/W
K/W
K/W
K/W
NXP Semiconductors
Product data sheet
NPN resistor-equipped transistor;
R1 = 10 kΩ, R2 = 10 kΩ
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
CEO
I
EBO
h
FE
V
CEsat
V
i(off)
V
i(on)
R1
R2
-------
-
R1
C
c
PARAMETER
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
input-off voltage
input-on voltage
input resistor
resistor ratio
collector capacitance
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
CONDITIONS
V
CB
= 50 V; I
E
= 0
V
CE
= 30 V; I
B
= 0
V
CE
= 30 V; I
B
= 0; T
j
= 150
°C
V
EB
= 5 V; I
C
= 0
V
CE
= 5 V; I
C
= 5 mA
I
C
= 100
μA;
V
CE
= 5 V
I
C
= 10 mA; V
CE
= 0.3 V
PDTC114E series
MIN.
−
−
−
−
30
−
−
2.5
7
0.8
−
TYP.
−
−
−
−
−
−
1.1
1.8
10
1
−
MAX.
100
1
50
400
−
150
0.8
−
13
1.2
2.5
UNIT
nA
μA
μA
μA
mV
V
V
kΩ
collector-emitter saturation voltage I
C
= 10 mA; I
B
= 0.5 mA
pF
2004 Aug 05
5
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