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PMBFJ111

Description
N-channel junction FETs Rev. 4 — 20 September 2011
CategoryDiscrete semiconductor    The transistor   
File Size81KB,9 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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PMBFJ111 Overview

N-channel junction FETs Rev. 4 — 20 September 2011

PMBFJ111 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeSOT-23
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
ConfigurationSINGLE
Minimum drain-source breakdown voltage40 V
Maximum drain-source on-resistance30 Ω
FET technologyJUNCTION
JEDEC-95 codeTO-236AB
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Operating modeDEPLETION MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.3 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
PMBFJ111; PMBFJ112;
PMBFJ113
N-channel junction FETs
Rev. 4 — 20 September 2011
Product data sheet
1. Product profile
1.1 General description
Symmetrical N-channel junction FETs in a SOT23 package.
SO
T2
3
1.2 Features and benefits
High-speed switching
Interchangeability of drain and source connections
Low R
DSon
at zero gate voltage (< 30
for PMBFJ111).
1.3 Applications
Analog switches
Choppers
Commutators
Multiplexers
Thin and thick film hybrids.
2. Pinning information
Table 1.
Pin
1
2
3
Pinning
Description
[1]
drain
source
gate
1
2
3
Simplified outline
3
Symbol
1
2
sym053
[1]
Drain and source are interchangeable.

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Description N-channel junction FETs Rev. 4 — 20 September 2011 N-channel junction FETs Rev. 4 — 20 September 2011
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