PMBFJ111; PMBFJ112;
PMBFJ113
N-channel junction FETs
Rev. 4 — 20 September 2011
Product data sheet
1. Product profile
1.1 General description
Symmetrical N-channel junction FETs in a SOT23 package.
SO
T2
3
1.2 Features and benefits
High-speed switching
Interchangeability of drain and source connections
Low R
DSon
at zero gate voltage (< 30
for PMBFJ111).
1.3 Applications
Analog switches
Choppers
Commutators
Multiplexers
Thin and thick film hybrids.
2. Pinning information
Table 1.
Pin
1
2
3
Pinning
Description
[1]
drain
source
gate
1
2
3
Simplified outline
3
Symbol
1
2
sym053
[1]
Drain and source are interchangeable.
NXP Semiconductors
PMBFJ111; PMBFJ112; PMBFJ113
N-channel junction FETs
3. Ordering information
Table 2.
Ordering information
Package
Name
PMBFJ111
PMBFJ112
PMBFJ113
-
Description
plastic surface mounted package; 3 leads
Version
SOT23
Type number
4. Marking
Table 3.
PMBFJ111
PMBFJ112
PMBFJ113
[1]
* = p: Made in Hong Kong
* = t: Made in Malaysia
* = W: Made in China
Marking
Marking code
[1]
41*
42*
47*
Type number
5. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GSO
V
GDO
I
G
P
tot
T
stg
T
j
[1]
Parameter
drain-source voltage (DC)
gate-source voltage
gate-drain voltage
forward gate current (DC)
total power dissipation
storage temperature
junction temperature
Conditions
Min
-
-
-
-
Max
40
40
40
50
300
+150
150
Unit
V
V
V
mA
mW
C
C
T
amb
= 25
C
[1]
-
65
-
Mounted on a ceramic substrate, 8 mm
10 mm
0.7 mm.
6. Thermal characteristics
Table 5.
Thermal characteristics
T
j
= P (R
th(j-t)
+ R
th(t-s)
+ R
th(s-a)
) + T
amb
.
Symbol
R
th(j-a)
Parameter
thermal resistance from junction to ambient
thermal resistance from junction to ambient
[1]
[2]
Mounted on a ceramic substrate, 8 mm
10 mm
0.7 mm.
Mounted on printed circuit board.
Conditions
[1]
[2]
Typ
430
500
Unit
K/W
K/W
PMBFJ111_112_113
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 4 — 20 September 2011
2 of 9
NXP Semiconductors
PMBFJ111; PMBFJ112; PMBFJ113
N-channel junction FETs
7. Static characteristics
Table 6.
Static characteristics
T
j
= 25
C.
Symbol
I
GSS
I
DSS
Parameter
gate-source leakage current
drain-source leakage current
PMBFJ111
PMBFJ112
PMBFJ113
V
(BR)GSS
V
GSoff
gate-source breakdown voltage
gate-source cut-off voltage
PMBFJ111
PMBFJ112
PMBFJ113
R
DSon
drain-source on-state resistance
PMBFJ111
PMBFJ112
PMBFJ113
V
GS
= 0 V; V
DS
= 0.1 V
V
GS
= 0 V; V
DS
= 0.1 V
V
GS
= 0 V; V
DS
= 0.1 V
-
-
-
-
-
-
30
50
100
I
D
= 1
A;
V
DS
= 5 V
I
D
= 1
A;
V
DS
= 5 V
I
D
= 1
A;
V
DS
= 5 V
10
5
3
-
-
-
3
1
0.5
V
V
V
V
GS
= 0 V; V
DS
= 15 V
V
GS
= 0 V; V
DS
= 15 V
V
GS
= 0 V; V
DS
= 15 V
I
G
=
1 A;
V
DS
= 0 V
20
5
2
40
-
-
-
-
-
-
-
-
mA
mA
mA
V
Conditions
V
GS
=
15
V; V
DS
= 0 V
Min
-
Typ
-
Max
1
Unit
nA
8. Dynamic characteristics
Table 7.
Symbol
C
iss
C
rss
t
r
t
on
t
f
t
off
[1]
Dynamic characteristics
Parameter
input capacitance
feedback capacitance
rise time
turn-on time
fall time
turn-off time
[1]
[1]
[1]
[1]
Conditions
V
DS
= 0 V; V
GS
=
10
V; f = 1 MHz
V
DS
= 0 V; V
GS
= 0 V; f = 1 MHz; T
amb
= 25
C
Min
-
-
-
-
-
-
-
Typ
6
22
3
6
13
15
35
Max
-
28
-
-
-
-
-
Unit
pF
pF
pF
ns
ns
ns
ns
Switching times; see
Figure 2
Test conditions for switching times are as follows:
V
DD
= 10 V, V
GS
= 0 V to V
GSoff
(all types);
V
GSoff
=
12
V, R
L
= 750
(PMBFJ111);
V
GSoff
=
7
V, R
L
= 1550
(PMBFJ112);
V
GSoff
=
5
V, R
L
= 3150
(PMBFJ113).
PMBFJ111_112_113
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 4 — 20 September 2011
3 of 9
NXP Semiconductors
PMBFJ111; PMBFJ112; PMBFJ113
N-channel junction FETs
V
DD
10 nF
50
Ω
10
μF
RL
1
μF
DUT
SAMPLING
SCOPE
50
Ω
50
Ω
mbk289
Fig 1.
Switching circuit.
V
GS
= 0 V
10%
V
i
−V
GS off
90%
t
off
t
s
90%
V
o
10%
mbk294
t
on
t
f
t
d
t
r
Fig 2.
Input and output waveforms.
PMBFJ111_112_113
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 4 — 20 September 2011
4 of 9
NXP Semiconductors
PMBFJ111; PMBFJ112; PMBFJ113
N-channel junction FETs
9. Package outline
Plastic surface-mounted package; 3 leads
SOT23
D
B
E
A
X
HE
v
M
A
3
Q
A
A1
1
e1
e
bp
2
w
M
B
detail X
Lp
c
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.9
A
1
max.
0.1
b
p
0.48
0.38
c
0.15
0.09
D
3.0
2.8
E
1.4
1.2
e
1.9
e
1
0.95
H
E
2.5
2.1
L
p
0.45
0.15
Q
0.55
0.45
v
0.2
w
0.1
OUTLINE
VERSION
SOT23
REFERENCES
IEC
JEDEC
TO-236AB
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
Fig 3.
Package outline.
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
PMBFJ111_112_113
Product data sheet
Rev. 4 — 20 September 2011
5 of 9
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