PMBTA44
400 V, 0.3 A NPN high-voltage low V
CEsat
(BISS) transistor
Rev. 01 — 22 February 2008
Product data sheet
1. Product profile
1.1 General description
NPN high-voltage low V
CEsat
Breakthrough In Small Signal (BISS) transistor in a
SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.
1.2 Features
I
Low current (max. 300 mA)
I
High voltage (max. 400 V)
I
AEC-Q101 qualified
1.3 Applications
I
I
I
I
I
I
LED driver for LED chain module
LCD backlighting
High Intensity Discharge (HID) front lighting
Automotive motor management
Hook switch for wired telecom
Switch mode power supply
1.4 Quick reference data
Table 1.
Symbol
V
CEO
I
C
h
FE
Quick reference data
Parameter
collector-emitter voltage
collector current
DC current gain
V
CE
= 10 V; I
C
= 10 mA
Conditions
open base
Min
-
-
50
Typ
-
-
-
Max
400
300
200
Unit
V
mA
NXP Semiconductors
PMBTA44
400 V, 0.3 A NPN high-voltage low V
CEsat
(BISS) transistor
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
base
emitter
collector
1
2
2
sym021
Simplified outline
3
Symbol
3
1
3. Ordering information
Table 3.
Ordering information
Package
Name
PMBTA44
-
Description
plastic surface-mounted package; 3 leads
Version
SOT23
Type number
4. Marking
Table 4.
PMBTA44
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Marking codes
Marking code
[1]
W3*
Type number
PMBTA44_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 22 February 2008
2 of 12
NXP Semiconductors
PMBTA44
400 V, 0.3 A NPN high-voltage low V
CEsat
(BISS) transistor
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
j
T
amb
T
stg
[1]
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
peak base current
total power dissipation
junction temperature
ambient temperature
storage temperature
Conditions
open emitter
open base
open collector
single pulse;
t
p
≤
1 ms
single pulse;
t
p
≤
1 ms
T
amb
≤
25
°C
[1]
Min
-
-
-
-
-
-
-
-
−55
−65
Max
500
400
6
300
300
100
250
150
+150
+150
Unit
V
V
V
mA
mA
mA
mW
°C
°C
°C
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
300
P
tot
(mW)
200
006aab196
100
0
−75
−25
25
75
125
175
T
amb
(°C)
FR4 PCB, standard footprint
Fig 1. Power derating curve SOT23 (TO-236AB)
PMBTA44_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 22 February 2008
3 of 12
NXP Semiconductors
PMBTA44
400 V, 0.3 A NPN high-voltage low V
CEsat
(BISS) transistor
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
[1]
Thermal characteristics
Parameter
Conditions
[1]
Min
-
Typ
-
Max
500
Unit
K/W
thermal resistance from junction to in free air
ambient
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
10
3
Z
th(j-a)
(K/W)
10
2
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05
10
0.02
0.01
006aab151
1
0
10
−1
10
−5
10
−4
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, standard footprint
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration for
SOT23 (TO-236AB)
PMBTA44_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 22 February 2008
4 of 12
NXP Semiconductors
PMBTA44
400 V, 0.3 A NPN high-voltage low V
CEsat
(BISS) transistor
7. Characteristics
Table 7.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
I
CBO
Parameter
Conditions
Min
-
-
-
Typ
-
-
-
Max
100
10
100
Unit
nA
µA
nA
collector-base cut-off V
CB
= 320 V; I
E
= 0 A
current
V
CB
= 320 V; I
E
= 0 A;
T
j
= 150
°C
emitter-base cut-off
current
DC current gain
V
EB
= 4 V; I
C
= 0 A
V
CE
= 10 V
I
C
= 10 mA
I
C
= 50 mA
I
C
= 100 mA
V
CEsat
collector-emitter
saturation voltage
I
C
= 1 mA; I
B
= 0.1 mA
I
C
= 10 mA; I
B
= 1 mA
I
C
= 50 mA; I
B
= 5 mA
V
BEsat
f
T
C
c
C
e
[1]
[1]
[1]
[1]
[1]
I
EBO
h
FE
50
45
40
-
-
-
-
20
-
-
-
-
-
-
-
-
-
-
-
-
200
-
-
400
500
750
850
-
7
180
mV
mV
mV
mV
MHz
pF
pF
base-emitter
saturation voltage
transition frequency
I
C
= 10 mA; I
B
= 1 mA
V
CE
= 10 V; I
E
= 10 mA;
f = 100 MHz
collector capacitance V
CB
= 20 V; I
E
= i
e
= 0 A;
f = 1 MHz
emitter capacitance
Pulse test: t
p
≤
300
µs; δ ≤
0.02.
V
EB
= 0.5 V;
I
C
= i
c
= 0 A; f = 1 MHz
PMBTA44_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 22 February 2008
5 of 12
京公网安备 11010802033920号
EEWORLD
