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PMBTA45

Description
500 V, 150 mA NPN high-voltage low VCEsat transistor
CategoryDiscrete semiconductor    The transistor   
File Size130KB,13 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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PMBTA45 Overview

500 V, 150 mA NPN high-voltage low VCEsat transistor

PMBTA45 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeSOT-23
package instructionPLASTIC PACKAGE-3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)0.15 A
Collector-emitter maximum voltage500 V
ConfigurationSINGLE
Minimum DC current gain (hFE)50
JEDEC-95 codeTO-236AB
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal surfacePURE TIN
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)35 MHz
PMBTA45
500 V, 150 mA NPN high-voltage low V
CEsat
(BISS) transistor
Rev. 02 — 10 March 2010
Product data sheet
1. Product profile
1.1 General description
NPN high-voltage low V
CEsat
Breakthrough In Small Signal (BISS) transistor in a
SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.
PNP complement: PBHV9050T.
1.2 Features and benefits
High voltage
Low collector-emitter saturation voltage V
CEsat
High collector current capability I
C
and I
CM
High collector current gain (h
FE
) at high I
C
AEC-Q101 qualified
1.3 Applications
Electronic ballasts
LED driver for LED chain module
LCD backlighting
Automotive motor management
Flyback converters
Hook switch for wired telecom
Switch Mode Power Supply (SMPS)
1.4 Quick reference data
Table 1.
Symbol
V
CESM
V
CEO
I
C
h
FE
Quick reference data
Parameter
collector-emitter peak
voltage
collector-emitter voltage
collector current
DC current gain
V
CE
= 10 V; I
C
= 30 mA
Conditions
V
BE
= 0 V
open base
Min
-
-
-
50
Typ
-
-
-
100
Max
500
500
0.15
-
Unit
V
V
A

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PMBTA45 PMBTA45,215
Description 500 V, 150 mA NPN high-voltage low VCEsat transistor 500 V, 150 mA NPN high-voltage low V_CEsat (BISS) transistor
Is it Rohs certified? conform to conform to
Maker NXP NXP
Parts packaging code SOT-23 TO-236
package instruction PLASTIC PACKAGE-3 PLASTIC PACKAGE-3
Contacts 3 3
Reach Compliance Code unknow compli
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