PMD9010D
MOSFET driver
Rev. 01 — 20 November 2006
Product data sheet
1. Product profile
1.1 General description
Two NPN transistors and high-speed switching diode connected in totem pole
configuration in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic
package.
1.2 Features
I
I
I
I
I
I
Two general-purpose transistors and one high-speed switching diode as driver
Totem pole configuration
Application-optimized pinout
Internal connections to minimize layout effort
Space-saving solution
Reduces component count
1.3 Applications
I
MOSFET driver
1.4 Quick reference data
Table 1.
Symbol
V
CEO
I
C
I
CM
Diode (D1)
I
F
V
F
[1]
Quick reference data
Parameter
collector-emitter voltage
collector current
peak collector current
single pulse;
t
p
≤
1 ms
Conditions
open base
Min
-
-
-
Typ
-
-
-
Max
45
0.1
0.2
Unit
V
A
A
Per transistor
forward current
forward voltage
Pulse test: t
p
≤
300
µs; δ ≤
0.02.
-
I
F
=
−200
mA
[1]
-
-
−0.2
−1.1
A
V
-
NXP Semiconductors
PMD9010D
MOSFET driver
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
Pinning
Description
output
ground
input
collector resistor
collector resistor
supply voltage
1
2
3
006aaa657
Symbol
OUT
GND
IN
RC
RC
VCC
Simplified outline
6
5
4
Symbol
6
5
4
1
2
3
TR2
D1
TR1
3. Ordering information
Table 3.
Ordering information
Package
Name
PMD9010D
SC-74
Description
plastic surface-mounted package (TSOP6); 6 leads
Version
SOT457
Type number
4. Marking
Table 4.
Marking codes
Marking code
AA
Type number
PMD9010D
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
single pulse;
t
p
≤
1 ms
Conditions
open emitter
open base
open collector
Min
-
-
-
-
-
Max
50
45
5
0.1
0.2
Unit
V
V
V
A
A
Transistor 1 (TR1)
PMD9010D_1
© NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 20 November 2006
2 of 16
NXP Semiconductors
PMD9010D
MOSFET driver
Table 5.
Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
I
C
I
CM
I
BM
P
tot
Parameter
collector-base voltage
collector-emitter voltage
collector current
peak collector current
peak base current
total power dissipation
single pulse;
t
p
≤
1 ms
single pulse;
t
p
≤
1 ms
T
amb
≤
25
°C
[1]
[2]
[3]
Conditions
open emitter
open base
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
−65
−65
Max
50
45
0.1
0.2
0.2
290
325
400
−0.2
−0.6
−9
−3
−1.7
150
+150
+150
Unit
V
V
A
A
A
mW
mW
mW
A
A
A
A
A
°C
°C
°C
Transistor 2 (TR2)
Diode (D1)
I
F
I
FRM
I
FSM
forward current
repetitive peak forward current t
p
≤
1 ms;
δ ≤
0.25
non-repetitive peak forward
current
square wave
t
p
= 1
µs
t
p
= 100
µs
t
p
= 10 ms
Device
T
j
T
amb
T
stg
[1]
[2]
[3]
junction temperature
ambient temperature
storage temperature
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
PMD9010D_1
© NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 20 November 2006
3 of 16
NXP Semiconductors
PMD9010D
MOSFET driver
500
P
tot
(mW)
400
(1)
006aaa919
(2)
300
(3)
200
100
0
−75
−25
25
75
125
175
T
amb
(°C)
(1) Ceramic PCB, Al
2
O
3
, standard footprint
(2) FR4 PCB, mounting pad for collector 1 cm
2
(3) FR4 PCB, standard footprint
Fig 1. TR2: Power derating curves
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
Conditions
in free air
[1]
[2]
[3]
Min
-
-
-
Typ
-
-
-
Max
430
385
312
Unit
K/W
K/W
K/W
Transistor 2 (TR2)
[1]
[2]
[3]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
PMD9010D_1
© NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 20 November 2006
4 of 16
NXP Semiconductors
PMD9010D
MOSFET driver
10
3
Z
th(j-a)
(K/W)
10
2
duty cycle =
1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
006aaa920
10
1
10
-5
10
-4
10
-3
10
-2
10
-1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, standard footprint
Fig 2. TR2: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
10
3
Z
th(j-a)
(K/W)
10
2
duty cycle =
1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
10
0.01
0
006aaa921
1
10
-5
10
-4
10
-3
10
-2
10
-1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, mounting pad for collector 1 cm
2
Fig 3. TR2: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMD9010D_1
© NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 20 November 2006
5 of 16
MEMS sensors
京公网安备 11010802033920号
EEWORLD
