PMD9050D
MOSFET driver
Rev. 01 — 27 November 2006
Product data sheet
1. Product profile
1.1 General description
NPN transistor and high-speed switching diode supplemented by an NPN/PNP transistor
pair connected as a silicon-controlled switch in a SOT457 (SC-74) small Surface-Mounted
Device (SMD) plastic package.
1.2 Features
I
I
I
I
I
I
General-purpose transistor and high-speed switching diode as driver
Silicon-controlled switch to bypass the driver transistor
Application-optimized pinout
Internal connections to minimize layout effort
Space-saving solution
Reduces component count
1.3 Applications
I
MOSFET driver with silicon-controlled switch
1.4 Quick reference data
Table 1.
Symbol
V
CEO
I
C
I
CM
Diode (D1)
I
F
V
F
V
R
[1]
Quick reference data
Parameter
collector-emitter voltage
collector current
peak collector current
single pulse;
t
p
≤
1 ms
Conditions
open base
Min
-
-
-
Typ
-
-
-
Max
45
0.1
0.2
Unit
V
A
A
Per transistor; for the PNP transistor with negative polarity
forward current
forward voltage
reverse voltage
Pulse test: t
p
≤
300
µs; δ ≤
0.02.
-
I
F
= 200 mA
[1]
-
-
-
0.2
1.1
60
A
V
V
-
-
NXP Semiconductors
PMD9050D
MOSFET driver
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
Pinning
Symbol
IN
OUT
RC
GND
ON
OFF
Description
input
output
collector resistor
ground
output enable
output disable
1
2
1
2
3
TR2
TR1
D1
Simplified outline
6
5
4
Symbol
6
5
TR3
4
3
006aaa654
3. Ordering information
Table 3.
Ordering information
Package
Name
PMD9050D
SC-74
Description
plastic surface-mounted package (TSOP6); 6 leads
Version
SOT457
Type number
4. Marking
Table 4.
Marking codes
Marking code
9G
Type number
PMD9050D
PMD9050D_1
© NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 27 November 2006
2 of 13
NXP Semiconductors
PMD9050D
MOSFET driver
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
Diode (D1)
V
RRM
V
R
I
F
I
FRM
I
FSM
repetitive peak reverse
voltage
reverse voltage
forward current
repetitive peak forward
current
non-repetitive peak forward
current
t
p
≤
1 ms;
δ
= 0.25
square wave
t
p
≤
1
µs
t
p
≤
100
µs
t
p
≤
10 ms
Device
P
tot
T
j
T
amb
T
stg
[1]
[2]
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
base current
peak base current
Conditions
open emitter
open base
open collector
single pulse;
t
p
≤
1 ms
single pulse;
t
p
≤
1 ms
Min
-
-
-
-
-
-
-
Max
50
45
5
0.1
0.2
0.1
0.2
Unit
V
V
V
A
A
A
A
Per transistor; for the PNP transistor with negative polarity
-
-
-
-
60
60
0.2
0.6
V
V
A
A
-
-
-
[1]
[2]
9
3
1.7
290
400
150
+150
+150
A
A
A
mW
mW
°C
°C
°C
total power dissipation
junction temperature
ambient temperature
storage temperature
T
amb
≤
25
°C
-
-
-
−65
−65
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
PMD9050D_1
© NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 27 November 2006
3 of 13
NXP Semiconductors
PMD9050D
MOSFET driver
500
P
tot
(mW)
400
(1)
006aaa909
300
(2)
200
100
0
−75
−25
25
75
125
175
T
amb
(°C)
(1) Ceramic PCB, Al
2
O
3
, standard footprint
(2) FR4 PCB, standard footprint
Fig 1. Power derating curves
6. Thermal characteristics
Table 6.
Symbol
Device
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[1]
[2]
Thermal characteristics
Parameter
Conditions
Min
-
-
Typ
-
-
Max
430
312
Unit
K/W
K/W
[1]
[2]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
PMD9050D_1
© NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 27 November 2006
4 of 13
NXP Semiconductors
PMD9050D
MOSFET driver
10
3
Z
th(j-a)
(K/W)
10
2
duty cycle =
1
0.75
0.5
0.33
0.2
0.1
0.05
10
0.02
0.01
0
006aaa910
1
10
−5
10
−4
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, standard footprint
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
10
3
Z
th(j-a)
(K/W)
10
2
duty cycle =
1
0.75
0.5
0.33
0.2
0.1
0.05
10
0.02
0.01
0
006aaa911
1
10
−5
10
−4
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
Ceramic PCB, Al
2
O
3
, standard footprint
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMD9050D_1
© NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 27 November 2006
5 of 13
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