DISCRETE SEMICONDUCTORS
DATA SHEET
M3D744
PMEG2010EV
Low V
F
MEGA Schottky barrier
diode
Product data sheet
Supersedes data of 2002 Jun 24
2003 Aug 20
NXP Semiconductors
Product data sheet
Low V
F
MEGA Schottky barrier diode
FEATURES
•
Forward current: 1 A
•
Reverse voltage: 20 V
•
Very low forward voltage
•
Ultra small SMD package
•
Flat leads: excellent coplanarity and improved thermal
behaviour.
APPLICATIONS
•
Low voltage rectification
•
High efficiency DC/DC conversion
•
Switch mode power supply
•
Inverse polarity protection
•
Low power consumption applications.
DESCRIPTION
Planar Maximum Efficiency General Application (MEGA)
Schottky barrier diode with an integrated guard ring for
stress protection in a SOT666 ultra small SMD plastic
package.
1
2
3
handbook, halfpage
6
PMEG2010EV
PINNING
PIN
1
2
3
4
5
6
cathode
cathode
anode
anode
cathode
cathode
DESCRIPTION
5
4
1, 2
5, 6
3, 4
MHC310
Marking code:
F1.
Fig.1 Simplified outline (SOT666) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134)
SYMBOL
V
R
I
F
I
FSM
T
stg
T
j
T
amb
Note
1. Only valid if pins 3 and 4 are connected in parallel.
PARAMETER
continuous reverse voltage
continuous forward current
non-repetitive peak forward current
storage temperature
junction temperature
operating ambient temperature
t = 8.3 ms half sinewave;
JEDEC method; note 1
CONDITIONS
−
−
−
−65
−
−65
MIN.
1
8
+150
125
+125
MAX.
20
V
A
A
°C
°C
°C
UNIT
2003 Aug 20
2
NXP Semiconductors
Product data sheet
Low V
F
MEGA Schottky barrier diode
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
note 2
Notes
1. Refer to SOT666 standard mounting conditions.
2. Mounted on printed circuit-board, 1 cm
2
copper area.
Soldering
The only recommended soldering method is reflow soldering.
ELECTRICAL CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
V
F
PARAMETER
continuous forward voltage
I
F
= 10 mA
I
F
= 100 mA
I
F
= 1 000 mA; note 1; see Fig.2
I
R
reverse current
V
R
= 5 V; note 2
V
R
= 8 V; note 2
V
R
= 15 V; note 2; see Fig.3
C
d
Notes
1. Only valid if pins 1, 2, 5 and 6 are soldered on a 1 cm
2
copper solder land.
2. Pulse test: t
p
= 300
μs; δ
= 0.02.
diode capacitance
V
R
= 5 V; f = 1 MHz; see Fig.4
CONDITIONS
TYP.
240
300
480
5
7
10
19
PMEG2010EV
VALUE
405
215
UNIT
K/W
K/W
MAX.
270
350
550
10
20
50
25
UNIT
mV
mV
mV
μA
μA
μA
pF
2003 Aug 20
3
NXP Semiconductors
Product data sheet
Low V
F
MEGA Schottky barrier diode
GRAPHICAL DATA
PMEG2010EV
10
3
handbook, halfpage
IF
(mA)
10
2
MHC311
10
5
handbook, halfpage
IR
(μA)
(1)
MHC312
10
4
10
3
(1)
(2)
(3)
(2)
10
10
2
(3)
1
10
10
−1
0
0.2
0.4
VF (V)
0.6
1
0
5
10
15
20
VR (V)
25
(1) T
amb
= 125
°C.
(2) T
amb
= 85
°C.
(3) T
amb
= 25
°C.
(1) T
amb
= 125
°C.
(2) T
amb
= 85
°C.
(3) T
amb
= 25
°C.
Fig.2
Forward current as a function of forward
voltage; typical values.
Fig.3
Reverse current as a function of reverse
voltage; typical values.
handbook, halfpage
80
MHC313
Cd
(pF)
60
40
20
0
0
5
10
15
VR (V)
20
f = 1 MHz; T
amb
= 25
°C.
Fig.4
Diode capacitance as a function of reverse
voltage; typical values.
2003 Aug 20
4
NXP Semiconductors
Product data sheet
Low V
F
MEGA Schottky barrier diode
PACKAGE OUTLINE
PMEG2010EV
Plastic surface mounted package; 6 leads
SOT666
D
A
E
X
S
Y S
HE
6
5
4
pin 1 index
A
1
e1
e
2
bp
3
w
M
A
Lp
detail X
c
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
0.6
0.5
b
p
0.27
0.17
c
0.18
0.08
D
1.7
1.5
E
1.3
1.1
e
1.0
e
1
0.5
H
E
1.7
1.5
L
p
0.3
0.1
w
0.1
y
0.1
OUTLINE
VERSION
SOT666
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
01-01-04
01-08-27
2003 Aug 20
5
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