PMEG2020EH; PMEG2020EJ
20 V, 2 A very low V
F
MEGA Schottky barrier rectifiers
Rev. 04 — 15 January 2010
Product data sheet
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers with an
integrated guard ring for stress protection, encapsulated in small and flat lead Surface
Mounted Device (SMD) plastic packages.
Table 1.
Product overview
Package
NXP
PMEG2020EH
PMEG2020EJ
SOD123F
SOD323F
JEITA
-
SC-90
single diode
single diode
Configuration
Type number
1.2 Features
Forward current: 2 A
Reverse voltage: 20 V
Very low forward voltage
Small and flat lead SMD plastic package
1.3 Applications
Low voltage rectification
High efficiency DC-to-DC conversion
Switch mode power supply
Inverse polarity protection
Low power consumption applications
1.4 Quick reference data
Table 2.
Symbol
I
F
V
R
V
F
[1]
Quick reference data
Parameter
forward current
reverse voltage
forward voltage
I
F
= 2 A
[1]
Conditions
T
sp
≤
55
°C
Min
-
-
-
Typ
-
-
450
Max
2
20
525
Unit
A
V
mV
Pulse test: t
p
≤
300
μs; δ ≤
0.02.
NXP Semiconductors
PMEG2020EH; PMEG2020EJ
20 V, 2 A very low V
F
MEGA Schottky barrier rectifiers
2. Pinning information
Table 3.
Pin
1
2
Pinning
Description
cathode
anode
[1]
Simplified outline
Symbol
1
2
sym001
1
001aab540
2
[1]
The marking bar indicates the cathode.
3. Ordering information
Table 4.
Ordering information
Package
Name
PMEG2020EH
PMEG2020EJ
-
SC-90
Description
plastic surface mounted package; 2 leads
plastic surface mounted package; 2 leads
Version
SOD123F
SOD323F
Type number
4. Marking
Table 5.
Marking codes
Marking code
A6
CA
Type number
PMEG2020EH
PMEG2020EJ
PMEG2020EH_EJ_4
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 04 — 15 January 2010
2 of 10
NXP Semiconductors
PMEG2020EH; PMEG2020EJ
20 V, 2 A very low V
F
MEGA Schottky barrier rectifiers
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
R
I
F
I
FRM
I
FSM
P
tot
reverse voltage
forward current
non-repetitive peak forward
current
total power dissipation
PMEG2020EH
PMEG2020EJ
T
j
T
amb
T
stg
[1]
[2]
Conditions
T
sp
≤
55
°C
t
p
= 8 ms; square
wave
T
amb
≤
25
°C
[1]
[2]
[1]
[2]
Min
-
-
-
-
Max
20
2
7
9
Unit
V
A
A
A
repetitive peak forward current t
p
≤
1 ms;
δ ≤
0.5
-
-
-
-
-
−65
−65
375
830
360
830
150
+150
+150
mW
mW
mW
mW
°C
°C
°C
junction temperature
ambient temperature
storage temperature
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
6. Thermal characteristics
Table 7.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
PMEG2020EH
PMEG2020EJ
R
th(j-sp)
thermal resistance from
junction to solder point
PMEG2020EH
PMEG2020EJ
[1]
Conditions
in free air
[1][2]
[1][3]
[1][2]
[1][3]
[4]
Min
Typ
Max
Unit
-
-
-
-
-
-
-
-
330
150
350
150
K/W
K/W
K/W
K/W
-
-
-
-
60
55
K/W
K/W
For Schottky barrier diodes thermal run-away has to be considered, as in some applications the reverse
power losses P
R
are a significant part of the total power losses. Nomograms for determining the reverse
power losses P
R
and I
F(AV)
rating will be available on request.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
Soldering point of cathode tab.
[2]
[3]
[4]
PMEG2020EH_EJ_4
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 04 — 15 January 2010
3 of 10
NXP Semiconductors
PMEG2020EH; PMEG2020EJ
20 V, 2 A very low V
F
MEGA Schottky barrier rectifiers
7. Characteristics
Table 8.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
V
F
Parameter
forward voltage
I
F
= 0.01 A
I
F
= 0.1 A
I
F
= 1 A
I
F
= 2 A
I
R
reverse current
V
R
= 5 V
V
R
= 10 V
V
R
= 20 V
C
d
[1]
Conditions
[1]
Min
-
-
-
-
-
-
-
-
Typ
200
260
370
450
15
20
45
50
Max
220
290
430
525
50
80
200
60
Unit
mV
mV
mV
mV
μA
μA
μA
pF
diode
capacitance
V
R
= 5 V; f = 1 MHz
Pulse test: t
p
≤
300
μs; δ ≤
0.02.
PMEG2020EH_EJ_4
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 04 — 15 January 2010
4 of 10
NXP Semiconductors
PMEG2020EH; PMEG2020EJ
20 V, 2 A very low V
F
MEGA Schottky barrier rectifiers
10
4
I
F
(mA)
10
3
006aaa011
I
R
(mA)
10
2
10
1
(1)
(2)
006aaa012
10
2
10
−1
10
−2
(3)
10
(1)
(2)
(3)
(4)
10
−3
10
−4
1
10
−5
10
−1
0
0.1
0.2
0.3
0.4
V
F
(V)
0.5
10
−6
0
(4)
5
10
15
V
R
(V)
20
(1) T
amb
= 125
°C
(2) T
amb
= 85
°C
(3) T
amb
= 25
°C
(4) T
amb
=
−40 °C
(1) T
amb
= 125
°C
(2) T
amb
= 85
°C
(3) T
amb
= 25
°C
(4) T
amb
=
−40 °C
Fig 1.
Forward current as a function of forward
voltage; typical values
200
C
d
(pF)
150
Fig 2.
Reverse current as a function of reverse
voltage; typical values
006aaa013
100
50
0
0
5
10
15
V
R
(V)
20
T
amb
= 25
°C;
f = 1 MHz
Fig 3.
Diode capacitance as a function of reverse voltage; typical values
PMEG2020EH_EJ_4
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 04 — 15 January 2010
5 of 10
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