PMEG3005EB; PMEG3005EL
0.5 A very low V
F
MEGA Schottky barrier rectifiers
Rev. 01 — 29 November 2006
Product data sheet
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers with an
integrated guard ring for stress protection, encapsulated in ultra small Surface-Mounted
Device (SMD) plastic packages.
Table 1.
Product overview
Package
NXP
PMEG3005EB
PMEG3005EL
SOD523
SOD882
JEITA
SC-79
-
single
single
Configuration
Type number
1.2 Features
I
I
I
I
Forward current: I
F
≤
0.5 A
Reverse voltage: V
R
≤
30 V
Very low forward voltage
Ultra small SMD plastic packages
1.3 Applications
I
I
I
I
I
Low voltage rectification
High efficiency DC-to-DC conversion
Switch mode power supply
Reverse polarity protection
Low power consumption applications
1.4 Quick reference data
Table 2.
Symbol
I
F
V
R
V
F
[1]
Quick reference data
Parameter
forward current
reverse voltage
forward voltage
I
F
= 500 mA
[1]
Conditions
T
sp
≤
55
°C
Min
-
-
-
Typ
-
-
430
Max
0.5
30
500
Unit
A
V
mV
Pulse test: t
p
≤
300
µs; δ ≤
0.02.
NXP Semiconductors
PMEG3005EB; PMEG3005EL
0.5 A very low V
F
MEGA Schottky barrier rectifiers
2. Pinning information
Table 3.
Pin
SOD523
1
2
cathode
anode
[1]
Pinning
Description
Simplified outline
Symbol
1
1
2
2
sym001
SOD882
1
2
cathode
anode
[1]
1
1
2
2
sym001
Transparent
top view
[1]
The marking bar indicates the cathode.
3. Ordering information
Table 4.
Ordering information
Package
Name
PMEG3005EB
PMEG3005EL
SC-79
-
Description
plastic surface-mounted package; 2 leads
leadless ultra small plastic package; 2 terminals;
body 1.0
×
0.6
×
0.5 mm
Version
SOD523
SOD882
Type number
4. Marking
Table 5.
Marking codes
Marking code
KB
AM
Type number
PMEG3005EB
PMEG3005EL
PMEG3005EB_PMEG3005EL_1
© NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 29 November 2006
2 of 10
NXP Semiconductors
PMEG3005EB; PMEG3005EL
0.5 A very low V
F
MEGA Schottky barrier rectifiers
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
R
I
F
I
FRM
I
FSM
P
tot
Parameter
reverse voltage
forward current
repetitive peak forward current
non-repetitive peak forward
current
total power dissipation
PMEG3005EB
PMEG3005EL
T
j
T
amb
T
stg
[1]
Conditions
T
sp
≤
55
°C
t
p
≤
1 ms;
δ ≤
0.25
square wave;
t
p
= 8 ms
T
amb
≤
25
°C
[1]
Min
-
-
-
-
Max
30
0.5
1
3
Unit
V
A
A
A
-
-
-
−65
−65
310
250
150
+150
+150
mW
mW
°C
°C
°C
junction temperature
ambient temperature
storage temperature
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
6. Thermal characteristics
Table 7.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
PMEG3005EB
PMEG3005EL
R
th(j-sp)
thermal resistance from
junction to solder point
PMEG3005EB
[1]
[2]
[3]
[3]
Conditions
in free air
[1][2]
Min
Typ
Max
Unit
-
-
-
-
400
500
K/W
K/W
-
-
75
K/W
For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses P
R
are a significant part of the total power losses.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Soldering point of cathode tab.
PMEG3005EB_PMEG3005EL_1
© NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 29 November 2006
3 of 10
NXP Semiconductors
PMEG3005EB; PMEG3005EL
0.5 A very low V
F
MEGA Schottky barrier rectifiers
7. Characteristics
Table 8.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
V
F
Parameter
forward voltage
I
F
= 0.1 mA
I
F
= 1 mA
I
F
= 10 mA
I
F
= 100 mA
I
F
= 500 mA
I
R
C
d
[1]
Conditions
[1]
Min
-
-
-
-
-
-
-
-
Typ
90
150
210
295
430
15
70
24
Max
180
200
270
360
500
200
500
30
Unit
mV
mV
mV
mV
mV
µA
µA
pF
reverse current
diode capacitance
Pulse test: t
p
≤
300
µs; δ ≤
0.02.
V
R
= 10 V
V
R
= 30 V
V
R
= 1 V; f = 1 MHz
PMEG3005EB_PMEG3005EL_1
© NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 29 November 2006
4 of 10
NXP Semiconductors
PMEG3005EB; PMEG3005EL
0.5 A very low V
F
MEGA Schottky barrier rectifiers
10
4
I
F
(mA)
10
3
006aaa855
I
R
(µA)
10
5
(1)
006aaa856
10
4
10
3
10
2
(2)
(3)
10
2
(4)
10
10
(1)
(2)
(3)
(4)
(5)
1
10
−1
10
−2
10
−3
(5)
1
10
−1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
F
(V)
0
5
10
15
20
25
30
V
R
(V)
(1) T
amb
= 150
°C
(2) T
amb
= 125
°C
(3) T
amb
= 85
°C
(4) T
amb
= 25
°C
(5) T
amb
=
−40 °C
(1) T
amb
= 150
°C
(2) T
amb
= 125
°C
(3) T
amb
= 85
°C
(4) T
amb
= 25
°C
(5) T
amb
=
−40 °C
Fig 1. Forward current as a function of forward
voltage; typical values
40
C
d
(pF)
30
Fig 2. Reverse current as a function of reverse
voltage; typical values
006aaa857
20
10
0
0
10
20
V
R
(V)
30
f = 1 MHz; T
amb
= 25
°C
Fig 3. Diode capacitance as a function of reverse voltage; typical values
PMEG3005EB_PMEG3005EL_1
© NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 29 November 2006
5 of 10
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