PMEG4002EL
40 V, 0.2 A low V
F
MEGA Schottky barrier rectifier
Rev. 02 — 11 March 2009
Product data sheet
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection, encapsulated in a SOD882 leadless ultra small
Surface-Mounted Device (SMD) plastic package.
1.2 Features
I
I
I
I
I
Forward current: I
F
≤
0.2 A
Reverse voltage: V
R
≤
40 V
Low forward voltage
Leadless ultra small SMD plastic package
Power dissipation comparable to SOT23
1.3 Applications
I
I
I
I
I
I
Ultra high-speed switching
Voltage clamping
Protection circuits
Low voltage rectification
Blocking diodes
Low power consumption applications
1.4 Quick reference data
Table 1.
Symbol
I
F
V
R
Quick reference data
Parameter
forward current
reverse voltage
Conditions
Min
-
-
Typ
-
-
Max
0.2
40
Unit
A
V
NXP Semiconductors
PMEG4002EL
40 V, 0.2 A low V
F
MEGA Schottky barrier rectifier
2. Pinning information
Table 2.
Pin
1
2
Pinning
Description
cathode
anode
[1]
Simplified outline
Graphic symbol
1
2
sym001
1
2
Transparent
top view
[1]
The marking bar indicates the cathode.
3. Ordering information
Table 3.
Ordering information
Package
Name
PMEG4002EL -
Description
leadless ultra small plastic package; 2 terminals;
body 1.0
×
0.6
×
0.5 mm
Version
SOD882
Type number
4. Marking
Table 4.
Marking
Marking code
F4
Type number
PMEG4002EL
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
R
I
F
I
FRM
I
FSM
T
j
T
amb
T
stg
[1]
Parameter
reverse voltage
forward current
repetitive peak forward
current
non-repetitive peak
forward current
junction temperature
ambient temperature
storage temperature
Conditions
Min
-
-
Max
40
0.2
1
3
150
+150
+150
Unit
V
A
A
A
°C
°C
°C
t
p
≤
1 ms;
δ ≤
0.25
square wave;
t
p
= 8 ms
[1]
[1]
-
-
-
−65
−65
For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses P
R
are a significant part of the total power losses. Nomograms for determining the reverse
power losses P
R
and I
F(AV)
rating are available on request.
PMEG4002EL_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 11 March 2009
2 of 8
NXP Semiconductors
PMEG4002EL
40 V, 0.2 A low V
F
MEGA Schottky barrier rectifier
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
[1]
[2]
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
Conditions
in free air
[1][2]
Min
-
Typ
-
Max
500
Unit
K/W
Refer to SOD882 standard mounting conditions (footprint), FR4 Printed-Circuit Board (PCB) with
60
µm
copper strip line.
For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses P
R
are a significant part of the total power losses. Nomograms for determining the reverse
power losses P
R
and I
F(AV)
rating are available on request.
7. Characteristics
Table 7.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
V
F
Parameter
forward voltage
Conditions
I
F
= 0.1 mA
I
F
= 1 mA
I
F
= 10 mA
I
F
= 100 mA
I
F
= 200 mA
I
R
reverse current
V
R
= 25 V
V
R
= 40 V
C
d
[1]
[1]
Min
Typ
190
250
320
440
520
0.3
0.7
14
Max
220
290
360
500
600
0.5
10
20
Unit
mV
mV
mV
mV
mV
µA
µA
pF
diode capacitance
Pulse test: t
p
≤
300
µs; δ ≤
0.02.
V
R
= 1 V; f = 1 MHz
PMEG4002EL_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 11 March 2009
3 of 8
NXP Semiconductors
PMEG4002EL
40 V, 0.2 A low V
F
MEGA Schottky barrier rectifier
10
3
I
F
(mA)
10
2
001aaa337
10
4
I
R
(µA)
10
3
(1)
(2)
001aaa338
10
2
(3)
(1)
(2)
(3)
(4)
10
10
1
1
10
−1
10
−1
0
200
400
V
F
(mV)
600
10
−2
0
10
20
30
V
R
(V)
40
(4)
(1) T
j
= 150
°C
(2) T
j
= 125
°C
(3) T
j
= 85
°C
(4) T
j
= 25
°C
(1) T
j
= 150
°C
(2) T
j
= 125
°C
(3) T
j
= 85
°C
(4) T
j
= 25
°C
Fig 1.
Forward current as a function of forward
voltage; typical values
30
C
d
(pF)
20
Fig 2.
Reverse current as a function of reverse
voltage; typical values
001aaa339
10
0
0
10
20
30
V
R
(V)
40
f = 1 MHz; T
amb
= 25
°C
Fig 3.
Diode capacitance as a function of reverse voltage; typical values
PMEG4002EL_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 11 March 2009
4 of 8
NXP Semiconductors
PMEG4002EL
40 V, 0.2 A low V
F
MEGA Schottky barrier rectifier
8. Package outline
0.62
0.55
2
0.50
0.46
0.30
0.22
0.65
0.30
0.22
0.55
0.47
Dimensions in mm
1.02
0.95
1
cathode marking on top side
03-04-17
Fig 4.
Package outline SOD882
9. Packing information
Table 8.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number
Package
Description
2 mm pitch, 8 mm tape and reel
Packing quantity
10000
PMEG4002EL SOD882
[1]
-315
For further information and the availability of packing methods, see
Section 13.
10. Soldering
1.3
0.7
R0.05 (8×)
solder lands
solder resist
solder paste
occupied area
0.3
(2×)
0.4
(2×)
sod882_fr
0.9
0.6 0.7
(2×) (2×)
Dimensions in mm
Reflow soldering is the only recommended soldering method.
Fig 5.
PMEG4002EL_2
Reflow soldering footprint SOD882
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 11 March 2009
5 of 8
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