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PMEG6010CEH

Description
1 A, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size59KB,10 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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PMEG6010CEH Overview

1 A, SILICON, SIGNAL DIODE

PMEG6010CEH Parametric

Parameter NameAttribute value
Source Url Status Check Date2013-06-14 00:00:00
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerNXP
package instructionPLASTIC PACKAGE-2
Contacts2
Reach Compliance Codecompli
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.25 V
JESD-30 codeR-PDSO-F2
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak forward current9 A
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum repetitive peak reverse voltage60 V
surface mountYES
technologySCHOTTKY
Terminal surfaceTin (Sn)
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperature30
PMEG6010CEH; PMEG6010CEJ
1 A very low V
F
MEGA Schottky barrier rectifiers
Rev. 02 — 27 March 2007
Product data sheet
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers with an
integrated guard ring for stress protection, encapsulated in small and flat lead
Surface-Mounted Device (SMD) plastic packages.
Table 1.
Product overview
Package
NXP
PMEG6010CEH
PMEG6010CEJ
SOD123F
SOD323F
JEITA
-
SC-90
single
single
Configuration
Type number
1.2 Features
I
I
I
I
Forward current: I
F
1 A
Reverse voltage: V
R
60 V
Very low forward voltage
Small and flat lead SMD plastic packages
1.3 Applications
I
I
I
I
I
Low voltage rectification
High efficiency DC-to-DC conversion
Switch mode power supply
Reverse polarity protection
Low power consumption applications
1.4 Quick reference data
Table 2.
Symbol
I
F
V
R
V
F
[1]
Quick reference data
Parameter
forward current
reverse voltage
forward voltage
I
F
= 1 A
[1]
Conditions
T
sp
55
°C
Min
-
-
-
Typ
-
-
570
Max
1
60
660
Unit
A
V
mV
Pulse test: t
p
300
µs; δ ≤
0.02.

PMEG6010CEH Related Products

PMEG6010CEH PMEG6010CEJ
Description 1 A, SILICON, SIGNAL DIODE 1 A, SILICON, SIGNAL DIODE
Is it lead-free? Lead free Lead free
Is it Rohs certified? conform to conform to
Maker NXP NXP
package instruction PLASTIC PACKAGE-2 PLASTIC, SC-90, 2 PIN
Contacts 2 2
Reach Compliance Code compli compli
ECCN code EAR99 EAR99
Configuration SINGLE SINGLE
Diode component materials SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 0.25 V 0.66 V
JESD-30 code R-PDSO-F2 R-PDSO-F2
JESD-609 code e3 e3
Humidity sensitivity level 1 1
Maximum non-repetitive peak forward current 9 A 10 A
Number of components 1 1
Number of terminals 2 2
Maximum operating temperature 150 °C 150 °C
Maximum output current 1 A 1 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260
Certification status Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 60 V 60 V
surface mount YES YES
technology SCHOTTKY SCHOTTKY
Terminal surface Tin (Sn) Tin (Sn)
Terminal form FLAT FLAT
Terminal location DUAL DUAL
Maximum time at peak reflow temperature 30 30
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