PMEM1505PG
PNP transistor/Schottky rectifier module
Rev. 02 — 31 August 2009
Product data sheet
1. Product profile
1.1 General description
Combination of an PNP transistor with low V
CEsat
and high current capability and a planar
Schottky barrier rectifier with an integrated guard ring for stress protection in a SOT353
(SC-88A) small plastic package. NPN complement: PMEM1505NG
1.2 Features
I
I
I
I
I
I
300 mW total power dissipation
Current capability up to 0.5 A
Reduces printed-circuit board area required
Reduces pick and place costs
Small plastic SMD package
Transistor
N
Low collector-emitter saturation voltage
I
Diode
N
Ultra high-speed switching
N
Very low forward voltage
N
Guard ring protected
1.3 Applications
I
DC-to-DC converters
I
General purpose load drivers
I
MOSFET drivers
I
Inductive load drivers
I
Reverse polarity protection circuits
1.4 Quick reference data
Table 1.
Symbol
V
CEO
I
C
V
R
I
F
[1]
Quick reference data
Parameter
collector-emitter voltage
collector current (DC)
continuous reverse voltage
continuous forward current
Conditions
open base
continuous
[1]
Min
-
-
-
-
Typ
-
-
-
-
Max
−15
−0.5
20
0.5
Unit
V
A
V
A
PNP transistor
Schottky barrier rectifier
Mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint for SOT353.
NXP Semiconductors
PMEM1505PG
PNP transistor/Schottky rectifier module
2. Pinning information
Table 2.
Pin
1
5
4
2
3
Discrete pinning
Description
anode
cathode
collector
base
emitter
1
2
3
4
sym024
Simplified outline
5
4
Symbol
3
2
1
5
3. Ordering information
Table 3.
Ordering information
Package
Name
PMEM1505PG
-
Description
plastic surface mounted package; 5 leads
Version
SOT353
Type number
4. Marking
Table 4.
Marking
Marking code
[1]
L6*
Type number
PMEM1505PG
[1]
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
I
C
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
Conditions
open emitter
open base
open collector
continuous
continuous
continuous;
T
s
≤
55
°C
I
CM
I
BM
peak collector current
peak base current
[1]
[2]
[3]
Min
-
-
-
-
-
-
-
-
Max
−15
−15
−6
−0.5
−0.6
−1
−1
−100
Unit
V
V
V
A
A
A
A
mA
PNP transistor
PMEM1505PG_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 31 August 2009
2 of 11
NXP Semiconductors
PMEM1505PG
PNP transistor/Schottky rectifier module
Table 5.
Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
P
tot
Parameter
total power dissipation
Conditions
T
amb
≤
25
°C
T
amb
≤
25
°C
T
s
≤
55
°C
T
j
V
R
I
F
I
FSM
P
tot
junction temperature
continuous reverse voltage
continuous forward current
non-repetitive peak forward
current
total power dissipation
t = 8.3 ms
square wave
T
amb
≤
25
°C
T
amb
≤
25
°C
T
s
≤
55
°C
T
j
P
tot
T
stg
T
amb
junction temperature
total power dissipation
storage temperature
operating ambient
temperature
[2]
[1]
[2]
[3]
[2]
[1]
[2]
[3]
Min
-
-
-
-
-
-
-
-
-
-
-
-
−65
−65
Max
200
250
800
150
20
0.5
5
200
250
800
125
300
+150
+150
Unit
mW
mW
mW
°C
V
A
A
mW
mW
mW
°C
mW
°C
°C
Schottky barrier rectifier
Combined device
T
amb
≤
25
°C
[2]
[1]
[2]
[3]
Mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint for SOT353.
Device mounted on a printed-circuit board, single-sided copper, tin-plated, 1cm
2
mounting pad for both
collector and cathode.
Solder point of collector or cathode tab.
6. Thermal characteristics
Table 6.
Symbol
R
th(j-s)
R
th(j-a)
Thermal characteristics
[1]
Parameter
from junction to solder point
from junction to ambient
Conditions
in free air
in free air
[2]
[3]
[4]
Typ
120
395
495
410
Unit
K/W
K/W
K/W
K/W
Single device
Combined device
R
th(j-a)
[1]
from junction to ambient
in free air
[5]
For Schottky barrier rectifiers thermal run-away has to be considered, as in some applications the reverse
power losses P
R
are a significant part of the total power losses. Nomograms for determining the reverse
power losses P
R
and I
F(AV)
rating will be available on request.
Solder point of collector or cathode tab.
Device mounted on a printed-circuit board, single-sided copper, tin-plated, 1cm
2
mounting pad for both
collector and cathode.
Mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint for SOT353.
Mounted on a ceramic printed-circuit board, single-sided copper, tin-plated, standard footprint.
[2]
[3]
[4]
[5]
PMEM1505PG_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 31 August 2009
3 of 11
NXP Semiconductors
PMEM1505PG
PNP transistor/Schottky rectifier module
7. Characteristics
Table 7.
Characteristics
T
amb
= 25
°
C unless otherwise specified
Symbol
I
CBO
Parameter
collector-base cut-off
current
emitter-base cut-off
current
DC current gain
Conditions
V
CB
=
−15
V; I
E
= 0 A
V
CB
=
−15
V; I
E
= 0 A;
T
j
= 150
°C
V
EB
=
−5
V; I
C
= 0 A
V
CE
=
−2
V; I
C
=
−10
mA
V
CE
=
−2
V; I
C
=
−100
mA
V
CE
=
−2
V; I
C
=
−500
mA
V
CEsat
collector-emitter
saturation voltage
I
C
=
−10
mA; I
B
=
−0.5
mA
I
C
=
−200
mA; I
B
=
−10
mA
I
C
=
−500
mA; I
B
=
−50
mA
R
CEsat
V
BEsat
V
BEon
f
T
C
c
equivalent
on-resistance
base-emitter
saturation voltage
base-emitter turn-on
voltage
transition frequency
collector capacitance
I
C
=
−500
mA; I
B
=
−50
mA
I
C
=
−500
mA; I
B
=
−50
mA
V
CE
=
−2
V; I
C
=
−100
mA
V
CE
=
−10
V; I
C
=
−50
mA;
f = 100 MHz
V
CB
=
−10
V; I
E
= I
e
= 0 A;
f = 1 MHz
see
Figure 1
I
F
= 10 mA
I
F
= 100 mA
I
F
= 500 mA
I
F
= 1000 mA
I
R
reverse current
see
Figure 2
V
R
= 5 V
V
R
= 8 V
V
R
= 15 V
C
d
diode capacitance
Pulse test: t
p
≤
300
µs; δ ≤
0.02
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
Min
-
-
-
200
150
90
-
-
-
-
-
-
100
-
Typ
-
-
-
-
-
-
-
-
-
300
-
-
280
4.4
Max
−100
−50
−100
-
-
-
−25
−150
−250
< 500
−1.1
−0.9
-
10
Unit
nA
µA
nA
PNP transistor
I
EBO
h
FE
mV
mV
mV
mΩ
V
V
MHz
pF
[1]
[1]
[1]
Schottky barrier rectifier
V
F
continuous forward
voltage
-
-
-
-
-
-
-
-
240
300
400
480
5
7
10
19
270
350
460
550
10
20
50
25
mV
mV
mV
mV
µA
µA
µA
pF
V
R
= 5 V; f = 1 MHz; see
Figure 3
[1]
PMEM1505PG_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 31 August 2009
4 of 11
NXP Semiconductors
PMEM1505PG
PNP transistor/Schottky rectifier module
10
3
I
F
(mA)
(1)
(2)
(3)
001aaa479
10
5
I
R
(µA)
10
4
(1)
001aaa480
10
2
10
3
(2)
10
2
10
10
(3)
1
0
0.1
0.2
0.3
0.4
V
F
(V)
0.5
1
0
5
10
15
20
V
R
(V)
25
Schottky barrier rectifier
(1) T
amb
= 125
°C
(2) T
amb
= 85
°C
(3) T
amb
= 25
°C
Schottky barrier rectifier
(1) T
amb
= 125
°C
(2) T
amb
= 85
°C
(3) T
amb
= 25
°C
Fig 1.
Forward current as a function of forward
voltage; typical values
80
001aaa481
Fig 2.
Reverse current as a function of reverse
voltage; typical values
001aaa486
600
h
FE
(1)
C
d
(pF)
60
400
40
(2)
200
20
(3)
0
0
5
10
15
V
R
(V)
20
0
−10
−1
−1
−10
−10
2
I
C
(mA)
−10
3
Schottky barrier rectifier;
f = 1 MHz; T
amb
= 25
°C
PNP transistor;
V
CE
=
−2
V
(1) T
amb
= 150
°C
(2) T
amb
= 25
°C
(3) T
amb
=
−55 °C
Fig 3.
Diode capacitance as a function of reverse
voltage; typical values
Fig 4.
DC current gain as a function of collector
current; typical values
PMEM1505PG_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 31 August 2009
5 of 11
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