PMK35EP datasheet, PDF - EEWORLD Datasheet

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PMK35EP: DescriptionP-channel TrenchMOS extremely low level FET; CategoryDiscrete semiconductor The transistor; File Size126KB，12 Pages; ManufacturerNXP; Websitehttps://www.nxp.com; Environmental Compliance

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PMK35EP Overview

P-channel TrenchMOS extremely low level FET

PMK35EP Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	NXP
Parts packaging code	SOIC
package instruction	SMALL OUTLINE, R-PDSO-G8
Contacts	8
Reach Compliance Code	compli
ECCN code	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (Abs) (ID)	14.9 A
Maximum drain current (ID)	14.9 A
Maximum drain-source on-resistance	0.019 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	MS-012AA
JESD-30 code	R-PDSO-G8
JESD-609 code	e4
Humidity sensitivity level	2
Number of components	1
Number of terminals	8
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	P-CHANNEL
Maximum power dissipation(Abs)	6.9 W
Maximum pulsed drain current (IDM)	28.8 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	Nickel/Palladium/Gold (Ni/Pd/Au)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	30
transistor applications	SWITCHING
Transistor component materials	SILICON

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PMK35EP

P-channel TrenchMOS extremely low level FET

Rev. 02 — 29 April 2010

Product data sheet

1. Product profile

1.1 General description

Extremely low level P-channel enhancement mode Field-Effect Transistor (FET) in a

plastic package using TrenchMOS technology. This product is designed and qualified for

use in computing, communications, consumer and industrial applications only.

1.2 Features and benefits



Low conduction losses due to low

on-state resistance

1.3 Applications



Battery management



Load switching

1.4 Quick reference data

Table 1.

Symbol

tot

Quick reference data

Parameter

drain-source

voltage

drain current

total power

dissipation

drain-source

on-state

resistance

Conditions

25 °C

≤

150 °C

= 25 °C; V

= -10 V; see

Figure 1;

see

Figure 3

= 25 °C; see

Figure 2

Min

Typ

Max Unit

-30

-14.

6.9

Static characteristics

DSon

= -10 V; I

= -9.2 A;

= 25 °C; see

Figure 9

mΩ

Dynamic characteristics

gate-drain charge V

= -10 V; I

= -9.2 A;

= -15 V; T

= 25 °C;

see

Figure 11;

see

Figure 12

PMK35EP Related Products

	PMK35EP	PMK35EP,518
Description	P-channel TrenchMOS extremely low level FET	MOSFET P-CH FET 30V 14.9A 8-SOIC
Is it Rohs certified?	conform to	conform to
Maker	NXP	NXP
Parts packaging code	SOIC	SOIC
Contacts	8	8
Reach Compliance Code	compli	compli

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