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PMP5201G

Description
PNP/PNP matched double transistors
CategoryDiscrete semiconductor    The transistor   
File Size101KB,14 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
Download Datasheet Parametric Compare View All

PMP5201G Overview

PNP/PNP matched double transistors

PMP5201G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeSC-88A
package instructionPLASTIC, SC-88A, 5 PIN
Contacts5
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage45 V
ConfigurationCOMMON EMITTER, 2 ELEMENTS
Minimum DC current gain (hFE)200
JESD-30 codeR-PDSO-G5
JESD-609 codee3
Humidity sensitivity level1
Number of components2
Number of terminals5
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Maximum power dissipation(Abs)0.2 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature30
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)175 MHz
PMP5201V; PMP5201G;
PMP5201Y
PNP/PNP matched double transistors
Rev. 03 — 28 August 2009
Product data sheet
1. Product profile
1.1 General description
PNP/PNP matched double transistors in small Surface-Mounted Device (SMD) plastic
packages. The transistors in the SOT666 and SOT363 (SC-88) packages are fully isolated
internally.
Table 1.
Product overview
Package
NXP
PMP5201V
PMP5201G
PMP5201Y
SOT666
SOT353
SOT363
JEITA
-
SC-88A
SC-88
PNP/PNP h
FE1
/h
FE2
0.95 complement
PMP5501V
PMP5501G
PMP5501Y
NPN/NPN
complement
PMP4201V
PMP4201G
PMP4201Y
Type number
1.2 Features
I
I
I
I
Current gain matching
Base-emitter voltage matching
Common emitter configuration for SOT353 types
Application-optimized pinout
1.3 Applications
I
Current mirror
I
Differential amplifier
1.4 Quick reference data
Table 2.
Symbol
V
CEO
I
C
h
FE
Quick reference data
Parameter
collector-emitter voltage
collector current
DC current gain
V
CE
=
−5
V;
I
C
=
−2
mA
Conditions
open base
Min
-
-
200
Typ
-
-
290
Max
−45
−100
450
Unit
V
mA
Per transistor

PMP5201G Related Products

PMP5201G PMP5201V PMP5201Y
Description PNP/PNP matched double transistors PNP/PNP matched double transistors PNP/PNP matched double transistors
Is it Rohs certified? conform to conform to conform to
Maker NXP NXP NXP
package instruction PLASTIC, SC-88A, 5 PIN PLASTIC PACKAGE-6 SMALL OUTLINE, R-PDSO-G6
Contacts 5 6 6
Reach Compliance Code compli compliant compli
ECCN code EAR99 EAR99 EAR99
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A
Collector-emitter maximum voltage 45 V 45 V 45 V
Configuration COMMON EMITTER, 2 ELEMENTS SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE) 200 200 200
JESD-30 code R-PDSO-G5 R-PDSO-F6 R-PDSO-G6
JESD-609 code e3 e3 e3
Humidity sensitivity level 1 1 1
Number of components 2 2 2
Number of terminals 5 6 6
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260 260
Polarity/channel type PNP PNP PNP
Maximum power dissipation(Abs) 0.2 W 0.2 W 0.2 W
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES YES YES
Terminal surface Tin (Sn) Tin (Sn) Tin (Sn)
Terminal form GULL WING FLAT GULL WING
Terminal location DUAL DUAL DUAL
Maximum time at peak reflow temperature 30 30 30
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 175 MHz 175 MHz 175 MHz
Parts packaging code SC-88A - SC-88
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