DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D187
PMST5550; PMST5551
NPN high-voltage transistors
Product data sheet
Supersedes data of 1997 May 20
1999 Apr 29
NXP Semiconductors
Product data sheet
NPN high-voltage transistors
FEATURES
•
Low current (max. 300 mA)
•
High voltage (max. 160 V).
APPLICATIONS
•
Switching and amplification in high voltage applications
such as telephony.
DESCRIPTION
handbook, halfpage
PMST5550; PMST5551
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
3
NPN high-voltage transistor in a SOT323 plastic package.
PNP complement: PMST5401.
1
3
MARKING
TYPE NUMBER
PMST5550
PMST5551
Note
1.
∗
= - : Made in Hong Kong.
∗
= t : Made in Malaysia.
Fig.1 Simplified outline (SOT323) and symbol.
MARKING CODE
(1)
∗1F
∗G3
2
1
Top view
2
MAM062
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
PARAMETER
collector-base voltage
PMST5550
PMST5551
V
CEO
collector-emitter voltage
PMST5550
PMST5551
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
open collector
open base
−
−
−
−
−
−
−
−65
−
−65
140
160
6
300
600
100
200
+150
150
+150
V
V
V
mA
mA
mA
mW
°C
°C
°C
CONDITIONS
open emitter
−
−
160
180
V
V
MIN.
MAX.
UNIT
1999 Apr 29
2
NXP Semiconductors
Product data sheet
NPN high-voltage transistors
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
PARAMETER
collector cut-off current
PMST5550
collector cut-off current
PMST5551
I
EBO
h
FE
emitter cut-off current
DC current gain
PMST5550
CONDITIONS
I
E
= 0; V
CB
= 100 V
PARAMETER
thermal resistance from junction to ambient
PMST5550; PMST5551
CONDITIONS
note 1
VALUE
625
UNIT
K/W
MIN.
−
−
−
−
−
60
60
20
80
80
30
−
MAX.
100
100
50
50
50
−
250
−
−
250
−
150
UNIT
nA
µA
nA
µA
nA
I
E
= 0; V
CB
= 100 V; T
amb
= 100
°C
I
E
= 0; V
CB
= 120 V
I
E
= 0; V
CB
= 120 V; T
amb
= 100
°C
I
C
= 0; V
EB
= 4 V
V
CE
= 5 V; (see Fig.2)
I
C
= 1 mA
I
C
= 10 mA
I
C
= 50 mA; note 1
DC current gain
PMST5551
V
CE
= 5 V; (see Fig.2)
I
C
= 1 mA
I
C
= 10 mA
I
C
= 50 mA; note 1
V
CEsat
collector-emitter saturation
voltage
collector-emitter saturation
voltage
PMST5550
PMST5551
I
C
= 10 mA; I
B
= 1 mA
I
C
= 50 mA; I
B
= 5 mA; note 1
mV
−
−
I
C
= 10 mA; I
B
= 1 mA
I
C
= 50 mA; I
B
= 5 mA; note 1
−
−
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
I
C
= 10 mA; V
CE
= 10 V; f = 100 MHz
I
C
= 200
µA;
V
CE
= 5 V; R
S
= 2 kΩ;
f = 10 Hz to 15.7 kHz
−
−
100
−
−
250
200
1
1.2
1
6
30
300
8
mV
mV
V
V
V
pF
pF
MHz
dB
V
BEsat
base-emitter saturation voltage
base-emitter saturation voltage
PMST5550
PMST5551
C
c
C
e
f
T
F
collector capacitance
emitter capacitance
transition frequency
noise figure
PMST5551
Note
1. Pulse test: t
p
≤
300
µs; δ ≤
0.02.
1999 Apr 29
3
NXP Semiconductors
Product data sheet
NPN high-voltage transistors
PMST5550; PMST5551
handbook, full pagewidth
160
MGD814
hFE
120
VCE = 5 V
80
40
0
10
−1
1
10
10
2
IC mA
10
3
Fig.2 DC current gain; typical values.
1999 Apr 29
4
NXP Semiconductors
Product data sheet
NPN high-voltage transistors
PACKAGE OUTLINE
PMST5550; PMST5551
Plastic surface mounted package; 3 leads
SOT323
D
B
E
A
X
y
HE
v
M
A
3
Q
A
A1
c
1
e1
e
bp
2
w
M
B
Lp
detail X
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.8
A1
max
0.1
bp
0.4
0.3
c
0.25
0.10
D
2.2
1.8
E
1.35
1.15
e
1.3
e1
0.65
HE
2.2
2.0
Lp
0.45
0.15
Q
0.23
0.13
v
0.2
w
0.2
OUTLINE
VERSION
SOT323
REFERENCES
IEC
JEDEC
EIAJ
SC-70
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
1999 Apr 29
5
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