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PMST5551

Description
NPN high-voltage transistors
CategoryDiscrete semiconductor    The transistor   
File Size60KB,7 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
Download Datasheet Parametric Compare View All

PMST5551 Overview

NPN high-voltage transistors

PMST5551 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeSC-70
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)0.3 A
Collector-based maximum capacity6 pF
Collector-emitter maximum voltage160 V
ConfigurationSINGLE
Minimum DC current gain (hFE)80
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.2 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
VCEsat-Max0.2 V
Base Number Matches1
DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D187
PMST5550; PMST5551
NPN high-voltage transistors
Product data sheet
Supersedes data of 1997 May 20
1999 Apr 29

PMST5551 Related Products

PMST5551 PMST5550
Description NPN high-voltage transistors NPN high-voltage transistors
Is it lead-free? Lead free Lead free
Is it Rohs certified? conform to conform to
Parts packaging code SC-70 SC-70
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Contacts 3 3
Reach Compliance Code compli compli
ECCN code EAR99 EAR99
Maximum collector current (IC) 0.3 A 0.3 A
Collector-based maximum capacity 6 pF 6 pF
Collector-emitter maximum voltage 160 V 140 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 80 60
JESD-30 code R-PDSO-G3 R-PDSO-G3
JESD-609 code e3 e3
Humidity sensitivity level 1 1
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260
Polarity/channel type NPN NPN
Maximum power dissipation(Abs) 0.2 W 0.2 W
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface Tin (Sn) Tin (Sn)
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
Maximum time at peak reflow temperature 30 30
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 100 MHz 100 MHz
VCEsat-Max 0.2 V 0.25 V
Base Number Matches 1 1
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