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PMT29EN

Description
30 V, 6 A N-channel Trench MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size165KB,15 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
Download Datasheet Parametric Compare View All

PMT29EN Overview

30 V, 6 A N-channel Trench MOSFET

PMT29EN Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeSC-73
package instructionSMALL OUTLINE, R-PDSO-G4
Contacts4
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresLOGIC LEVEL COMPATIBLE
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (ID)6 A
Maximum drain-source on-resistance0.036 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G4
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals4
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
SO
T2
PMT29EN
30 V, 6 A N-channel Trench MOSFET
Rev. 1 — 31 August 2011
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT223 (SC-73)
small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
23
1.2 Features and benefits
Logic-level compatible
Very fast switching
Trench MOSFET technology
1.3 Applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
1.4 Quick reference data
Table 1.
Symbol
V
DS
V
GS
I
D
R
DSon
Quick reference data
Parameter
drain-source voltage
gate-source voltage
drain current
drain-source on-state
resistance
V
GS
= 10 V; T
amb
= 25 °C
V
GS
= 10 V; I
D
= 6 A; T
j
= 25 °C
[1]
Conditions
T
j
= 25 °C
Min
-
-20
-
-
Typ
-
-
-
24
Max
30
20
6
29
Unit
V
V
A
mΩ
Static characteristics
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm
2
.
2. Pinning information
Table 2.
Pin
1
2
3
4
Pinning information
Symbol Description
G
D
S
D
gate
drain
source
drain
1
2
3
S
017aaa253
Simplified outline
4
Graphic symbol
D
G
SOT223 (SC-73)

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PMT29EN PMT29EN,115 PMT29EN,135
Description 30 V, 6 A N-channel Trench MOSFET TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,6A I(D),SOT-223 TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,6A I(D),SOT-223
Is it Rohs certified? conform to conform to conform to
Maker NXP NXP NXP
Parts packaging code SC-73 SC-73 SC-73
Contacts 4 4 4
Reach Compliance Code unknow unknow unknow
Source Url Status Check Date - 2013-06-14 00:00:00 2013-06-14 00:00:00
Brand Name - NXP Semiconduc NXP Semiconduc
Manufacturer packaging code - SOT223 SOT223
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