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PR1506

Description
1.5 A, 800 V, SILICON, RECTIFIER DIODE, DO-15
CategoryDiscrete semiconductor    Fast recovery diode   
File Size153KB,2 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
Download Datasheet Parametric Compare View All

PR1506 Overview

1.5 A, 800 V, SILICON, RECTIFIER DIODE, DO-15

PR1506 Parametric

Parameter NameAttribute value
Case StyleDO-15
IVA(A)1.5
VRRM (V)800
IFSM (A)50
VF (V)1.2
@IVA(A)1.5
Maximum reverse curre5.0
TRR(nS)500
classDiodes
PR1501-PR1507
Fast Recovery Rectifiers
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 1.5 A
Features
Low cost
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with Freon,Alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
DO - 15
Mechanical Data
Case:JEDEC DO-15,molded plastic
Polarity: Color band denotes cathode
Weight: 0.014 ounces,0.39 grams
Mounting position: Any
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
PR
1501
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
@T
A
=75
PR
1502
100
70
100
PR
1503
200
140
200
PR
1504
400
280
400
1.5
PR
1505
600
420
600
PR
1506
800
560
800
PR
1507
1000
700
1000
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
50
35
50
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@T
J
=125
I
FSM
50.0
A
Maximum instantaneous forw ard voltage
@ 1.5 A
Maximum reverse current
at rated DC blocking voltage
@T
A
=25
@T
A
=100
V
F
I
R
t
rr
C
J
R
θ
JA
T
J
T
STG
150
1.2
5.0
100.0
250
18
45
- 55---- +150
- 55---- +150
500
V
A
ns
pF
/W
Maximum reverse recovery time (Note1)
Typical junction capacitance
Typical thermal resistance
(Note2)
(Note3)
Operating junction temperature range
Storage temperature range
NOTE:1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
http://www.luguang.cn
mail:lge@luguang.cn

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Description 1.5 A, 800 V, SILICON, RECTIFIER DIODE, DO-15 1.5 A, 50 V, SILICON, RECTIFIER DIODE, DO-15 1.5 A, 100 V, SILICON, RECTIFIER DIODE, DO-15 Multilayer Ceramic Capacitors (High dielectric type) for Automotive COMPOSITE OUTLINE ASSY, UMI M/F CONNECTOR 1.5 A, 600 V, SILICON, RECTIFIER DIODE, DO-15 Multilayer Ceramic Capacitors (High dielectric type) for Automotive
Case Style DO-15 DO-15 DO-15 - - DO-15 -
IVA(A) 1.5 1.5 1.5 - - 1.5 -
VRRM (V) 800 50 100 - - 600 -
IFSM (A) 50 50 50 - - 50 -
VF (V) 1.2 1.2 1.2 - - 1.2 -
@IVA(A) 1.5 1.5 1.5 - - 1.5 -
Maximum reverse curre 5.0 5.0 5.0 - - 5.0 -
TRR(nS) 500 150 150 - - 250 -
class Diodes Diodes Diodes - - Diodes -

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