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RJP65S08DWA

Description
650V - 200A - IGBT Application: Inverter
File Size58KB,4 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
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RJP65S08DWA Overview

650V - 200A - IGBT Application: Inverter

Preliminary Datasheet
RJP65S08DWT/RJP65S08DWA
650V - 200A - IGBT
Application: Inverter
Features
Low collector to emitter saturation voltage
V
CE(sat)
= 1.6 V typ. (at I
C
= 200 A, V
GE
= 15 V, Ta = 25C)
High speed Switching
Short circuit withstands time (10
s
min.)
R07DS0825EJ0002
Rev.0.02
Aug 09, 2012
Outline
Die: RJP65S08DWT-80
2
C
Wafer: RJP65S08DWA-80
3
2
3
1G
1
3
1. Gate
2. Collector (The back)
3. Emitter
E
3
3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Junction temperature
Symbol
V
CES
V
GES
I
C Note1
I
C Note1
Tj
Ratings
650
±30
400
200
150
Unit
V
V
A
A
C
Notes: 1. This data is a regulated value in evaluation package.
R07DS0825EJ0002 Rev.0.02
Aug 09, 2012
Page 1 of 3

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Description 650V - 200A - IGBT Application: Inverter 650V - 200A - IGBT Application: Inverter 650V - 200A - IGBT Application: Inverter 650V - 200A - IGBT Application: Inverter
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