NTMFS5C410NL
Power MOSFET
40 V, 0.9 mW, 302 A, Single N−Channel
Features
•
•
•
•
Small Footprint (5x6 mm) for Compact Design
Low R
DS(on)
to Minimize Conduction Losses
Low Q
G
and Capacitance to Minimize Driver Losses
These Devices are Pb−Free and are RoHS Compliant
V
(BR)DSS
http://onsemi.com
R
DS(ON)
MAX
0.9 mW @ 10 V
I
D
MAX
302 A
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R
qJC
(Notes 1, 3)
Power Dissipation
R
qJC
(Note 1)
Continuous Drain
Current R
qJA
(Notes 1, 2, 3)
Power Dissipation
R
qJA
(Notes 1 & 2)
Pulsed Drain Current
T
C
= 25°C
Steady
State
T
C
= 100°C
T
C
= 25°C
T
C
= 100°C
T
A
= 25°C
Steady
State
T
A
= 100°C
T
A
= 25°C
T
A
= 100°C
T
A
= 25°C, t
p
= 10
ms
I
DM
T
J
, T
stg
I
S
E
AS
T
L
P
D
I
D
P
D
Symbol
V
DSS
V
GS
I
D
Value
40
±20
302
191
139
56
46
29
3.2
1.3
900
−55 to
+150
162
706
260
A
°C
A
mJ
°C
1
Unit
V
V
A
40 V
1.3 mW @ 4.5 V
D (5)
W
G (4)
A
S (1,2,3)
W
N−CHANNEL MOSFET
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (I
L(pk)
= 29 A)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
MARKING
DIAGRAM
D
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
5C410L
A
Y
W
ZZ
S
S
S
G
D
5C410L
AYWZZ
D
D
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Lot Traceability
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case − Steady State
Junction−to−Ambient − Steady State (Note 2)
Symbol
R
qJC
R
qJA
Value
0.9
39
Unit
°C/W
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm
2
, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
©
Semiconductor Components Industries, LLC, 2014
1
July, 2014 − Rev. 1
Publication Order Number:
NTMFS5C410NL/D
NTMFS5C410NL
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
V
(BR)DSS
V
(BR)DSS
/
T
J
I
DSS
V
GS
= 0 V,
V
DS
= 40 V
T
J
= 25
°C
T
J
= 125°C
V
GS
= 0 V, I
D
= 250
mA
40
21.2
1.0
250
100
V
mV/°C
mA
nA
Symbol
Test Condition
Min
Typ
Max
Unit
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 4)
Gate Threshold Voltage
Threshold Temperature Coefficient
Drain−to−Source On Resistance
I
GSS
V
DS
= 0 V, V
GS
= 20 V
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
V
GS
= V
DS
, I
D
= 250
mA
1.2
−5.75
2.0
V
mV/°C
V
GS
= 10 V
V
GS
= 4.5 V
I
D
= 50 A
I
D
= 50 A
0.71
1.0
190
0.9
1.3
mW
S
Forward Transconductance
g
FS
V
DS
= 15 V, I
D
= 50 A
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
SWITCHING CHARACTERISTICS
(Note 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= 50 A
T
J
= 25°C
T
J
= 125°C
0.73
0.6
79.5
V
GS
= 0 V, dIS/dt = 100 A/ms,
I
S
= 50 A
39
40.5
126
nC
ns
1.2
V
t
d(ON)
t
r
t
d(OFF)
t
f
V
GS
= 4.5 V, V
DS
= 20 V,
I
D
= 50 A, R
G
= 1.0
W
20
130
66
177
ns
C
ISS
C
OSS
C
RSS
Q
G(TOT)
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
V
GP
V
GS
= 4.5 V, V
DS
= 20 V; I
D
= 50 A
V
GS
= 4.5 V, V
DS
= 20 V; I
D
= 50 A
V
GS
= 10 V, V
DS
= 20 V; I
D
= 50 A
V
GS
= 0 V, f = 1 MHz, V
DS
= 25 V
8862
4156
116
66
143
6.75
21.4
22
2.7
V
nC
pF
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
t
RR
t
a
t
b
Q
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width
v
300
ms,
duty cycle
v
2%.
5. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
2
NTMFS5C410NL
TYPICAL CHARACTERISTICS
200
180
I
D
, DRAIN CURRENT (A)
160
140
120
100
80
60
40
20
0
0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
2.8 V
180
3.0 V
I
D
, DRAIN CURRENT (A)
160
140
120
100
80
60
40
20
0
0
0.5
1.0
1.5
2.0
T
J
= 125°C
T
J
= −55°C
2.5
3.0
3.5
4.0
T
J
= 25°C
10 V to 3.2 V
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.0013
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.0012
0.0011
0.0010
0.0009
0.0008
0.0007
0.0006
0.0005
0.0004
10
Figure 2. Transfer Characteristics
0.0012
0.0011
T
J
= 25°C
I
D
= 50 A
T
J
= 25°C
V
GS
= 4.5 V
0.0010
0.0009
V
GS
= 10 V
0.0008
0.0007
3
4
5
6
7
8
9
10
0.0006
V
GS
, GATE VOLTAGE (V)
20
30
40
50
60
I
D
, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
1.9
R
DS(on)
, NORMALIZED DRAIN−TO−
SOURCE RESISTANCE (W)
1.7
1.5
1.3
1.1
0.9
0.7
−50
V
GS
= 10 V
I
D
= 40 A
1M
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
100k
I
DSS
, LEAKAGE (nA)
T
J
= 150°C
T
J
= 125°C
10k
T
J
= 85°C
1k
100
10
−25
0
25
50
75
100
125
150
5
10
15
20
25
30
35
40
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
http://onsemi.com
3
NTMFS5C410NL
TYPICAL CHARACTERISTICS
10k
C, CAPACITANCE (pF)
9k
8k
7k
6k
5k
4k
3k
2k
1k
0
0
5
Q
T
C
ISS
8
25
20
C
OSS
V
GS
= 0 V
T
J
= 25°C
f = 1 MHz
6
15
4
Q
GS
Q
GD
V
DS
= 20 V
T
J
= 25°C
I
D
= 50 A
10
5
0
0
20
40
60
80
100
120
140
Q
G
, TOTAL GATE CHARGE (nC)
2
0
C
RSS
10
15
20
25
30
35
40
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
10,00
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
t
d(off)
t
f
t
r
t
d(on)
46
I
S
, SOURCE CURRENT (A)
41
36
31
26
21
16
11
6
1
100
0.3
0.4
0.5
T
J
= 150°C
T
J
= 25°C
0.6
0.7
0.8
T
J
= −55°C
0.9
1.0
T
J
= 125°C
t, TIME (ns)
100
10
V
GS
= 4.5 V
V
DD
= 20 V
I
D
= 50 A
1
1
10
R
G
, GATE RESISTANCE (W)
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
1000
T
C
= 25°C
V
GS
≤
10 V
0.01 ms
0.1 ms
100
I
PEAK
(A)
I
DS
(A)
100
1000
Figure 10. Diode Forward Voltage vs. Current
T
J(initial)
= 25°C
T
J(initial)
= 100°C
10
dc
10
R
DS(on)
Limit
Thermal Limit
Package Limit
1
0.1
1
10 ms
1 ms
1
10
V
DS
(V)
100
1E−04
1E−03
TIME IN AVALANCHE (s)
1E−02
Figure 11. Safe Operating Area
Figure 12. I
PEAK
vs. Time in Avalanche
http://onsemi.com
4
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
11k
10
30
NTMFS5C410NL
100
50% Duty Cycle
10
R
qJA
(t) (°C/W)
20%
10%
5%
2%
1%
NTMFS5C410NL 650 mm
2
, 2 oz., Cu Single Layer Pad
1
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
PULSE TIME (sec)
0.1
1
10
100
1000
Figure 13. Thermal Characteristics
DEVICE ORDERING INFORMATION
Device
NTMFS5C410NLT1G
NTMFS5C410NLT3G
Marking
5C410L
5C410L
Package
DFN5
(Pb−Free)
DFN5
(Pb−Free)
Shipping
†
1500 / Tape & Reel
5000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
5
京公网安备 11010802033920号
EEWORLD
