Silicon Controlled Rectifier, 100000mA I(T), 800V V(DRM),
| Parameter Name | Attribute value |
| Reach Compliance Code | compliant |
| Nominal circuit commutation break time | 35 µs |
| Critical rise rate of minimum off-state voltage | 50 V/us |
| Maximum DC gate trigger current | 100 mA |
| Maximum DC gate trigger voltage | 3 V |
| Maximum leakage current | 10 mA |
| On-state non-repetitive peak current | 600 A |
| Maximum on-state voltage | 2.2 V |
| Maximum on-state current | 100000 A |
| Maximum operating temperature | 125 °C |
| Minimum operating temperature | -30 °C |
| Off-state repetitive peak voltage | 800 V |
| surface mount | NO |
| Trigger device type | SCR |
京公网安备 11010802033920号
EEWORLD
