SyncMOS Technologies Inc.
S29C51004T/S29C51004B
4 MEGABIT (524,288 x 8 BIT)
5 VOLT CMOS FLASH MEMORY
Features
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512Kx8-bit Organization
Address Access Time: 70, 90, 120 ns
Single 5V
±
10% Power Supply
Sector Erase Mode Operation
16KB Boot Block (lockable)
1K bytes per Sector, 512 Sectors
– Sector-Erase Cycle Time: 10ms (Max)
– Byte-Write Cycle Time:
35
µ
s (Max)
Minimum 10,000 Erase-Program Cycles
Low power dissipation
– Active Read Current: 20mA (Typ)
– Active Program Current: 30mA (Typ)
– Standby Current:
100
µ
A (Max)
Hardware Data Protection
Low V
CC
Program Inhibit Below 3.5V
Self-timed write/erase operations with end-of-cy-
cle detection
– DATA Polling
– Toggle Bit
CMOS and TTL Interface
Available in
one
versions
– S29C51004T (Top Boot Block)
Description
The S29C51004T/S29C51004B is a high speed
524,288 x 8 bit CMOS flash memory. Writing or
erasing the device is done with a single 5 Volt
power supply. The device has separate chip enable
CE, write enable WE, and output enable OE
controls to eliminate bus contention.
The S29C51004T/S29C51004B offers a combi-
nation of: Boot Block with Sector Erase/Write
Mode. The end of write/erase cycle is detected by
DATA Polling of I/O
7
or by the Toggle Bit I/O
6
.
TheS29C51004T/S29C51004B features a
sector erase operation which allows each sector to
be erased and reprogrammed without affecting
data stored in other sectors. The device also
supports full chip erase.
Boot block architecture enables the device to
boot from a protected sector located either at the
top (S29C51004T) or the bottom (S29C51004B).
All inputs and outputs are CMOS and TTL
compatible.
The S29C51004T/S29C51004B is ideal for
applications that require updatable code and data
storage.
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Packages:
– 32-pin Plastic DIP
– 32-pin TSOP-I
– 32-pin PLCC
S29C51004T/S29C51004B
V1.0 May 2002
1
SyncMOS Technologies Inc.
S29C51004T/S29C51004B
4 MEGABIT (524,288 x 8 BIT)
5 VOLT CMOS FLASH MEMORY
Functional Block Diagram
4,194,304 Bit
Memory Cell Array
X-Decoder
A
0
–A
18
Address buffer & latches
Y-Decoder
CE
OE
WE
Control Logic
I/O Buffer & Data Latches
I/O
0
–I/O
7
51004-07
Capacitance
(1,2)
Symbol
C
IN
C
OUT
C
IN2
Parameter
Input Capacitance
Output Capacitance
Control Pin Capacitance
Test Setup
V
IN
= 0
V
OUT
= 0
V
IN
= 0
Typ.
6
8
8
Max.
8
12
10
Units
pF
pF
pF
NOTE:
1. Capacitance is sampled and not 100% tested.
2. T
A
= 25
°
C, V
CC
= 5V
±
10%, f = 1 MHz.
Latch Up Characteristics
(1)
Parameter
Input Voltage with Respect to GND on A
9
, OE
Input Voltage with Respect to GND on I/O, address or control pins
V
CC
Current
NOTE:
1. Includes all pins except V
CC
. Test conditions: V
CC
= 5V, one pin at a time.
Min.
-1
-1
-100
Max.
+13
V
CC
+ 1
+100
Unit
V
V
mA
AC Test Load
+5.0 V
IN3064
or Equivalent
Device Under
Test
IN3064 or Equivalent
C
L
= 100 pF
6.2 kΩ
IN3064 or Equivalent
IN3064 or Equivalent
51004-08
2.7 kΩ
S29C51004T/S29C51004B
V1.0 May 2002
3
SyncMOS Technologies Inc.
S29C51004T/S29C51004B
4 MEGABIT (524,288 x 8 BIT)
5 VOLT CMOS FLASH MEMORY
Absolute Maximum Ratings
(1)
Symbol
V
IN
V
IN
V
CC
T
STG
T
OPR
I
OUT
Parameter
Input Voltage (input or I/O pins)
Input Voltage (A
9
pin, OE)
Power Supply Voltage
Storage Temerpature (Plastic)
Operating Temperature
Short Circuit Current
(2)
Commercial
-2 to +7
-2 to +13
-0.5 to +5.5
-65 to +125
0 to +70
200 (Max.)
Industrial
-2 to +7
-2 to +13
-0.5 to +5.5
-65 to +150
-40 to + 85
200 (Max.)
Unit
V
V
V
°
C
°
C
mA
NOTE:
1. Stress greater than those listed unders “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections
of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
2. No more than one output maybe shorted at a time and not exceeding one second long.
DC Electrical Characteristics
(over the commercial operating range)
Parameter
Name
V
IL
V
IH
I
IL
I
OL
V
OL
V
OH
I
CC1
Parameter
Input LOW Voltage
Input HIGH Voltage
Input Leakage Current
Output Leakage Current
Output LOW Voltage
Output HIGH Voltage
Read Current
Test Conditions
V
CC
= V
CC
Min.
V
CC
= V
CC
Max.
V
IN
= GND to V
CC
, V
CC
= V
CC
Max.
V
OUT
= GND to V
CC
, V
CC
= V
CC
Max.
V
CC
= V
CC
Min., I
OL
= 2.1mA
V
CC
= V
CC
Min, I
OH
= -400
µ
A
CE = OE = V
IL
, WE = V
IH
, all I/Os open,
Address input = V
IL
/V
IH
, at f = 1/t
RC
Min.,
V
CC
= V
CC
Max.
CE = WE = VIL, OE = V
IH
, V
CC
= V
CC
Max.
CE = OE = WE = V
IH
, V
CC
= V
CC
Max.
CE = OE = WE = V
CC
– 0.3V, V
CC
= V
CC
Max.
CE = OE = V
IL
, WE = V
IH
CE = OE = V
IL
, WE = V
IH
, A9 = V
H
Max.
Min.
—
2
—
—
—
2.4
—
Max.
0.8
—
±
1
±
10
0.4
—
30
Unit
V
V
µ
A
µ
A
V
V
mA
I
CC2
I
SB
I
SB1
V
H
I
H
Write Current
TTL Standby Current
CMOS Standby Current
Device ID Voltage for A
9
Device ID Current for A
9
—
—
—
11.5
—
40
1
100
12.5
50
mA
mA
µA
V
µA
S29C51004T/S29C51004B
V1.0 May 2002
4
SyncMOS Technologies Inc.
S29C51004T/S29C51004B
4 MEGABIT (524,288 x 8 BIT)
5 VOLT CMOS FLASH MEMORY
AC Electrical Characteristics
Read Cycle
Parameter
Name
t
RC
t
AA
t
ACS
t
OE
t
CLZ
t
OLZ
t
DF
t
OH
-70
Parameter
Read Cycle Time
Address Access Time
Chip Enable Access Time
Output Enable Access Time
CE Low to Output Active
OE Low to Output Active
OE or CE High to Output in High Z
Output Hold from Address Change
-90
Max.
—
70
70
35
—
—
30
—
-12
Max.
—
90
90
45
—
—
40
—
Min.
70
—
—
—
0
0
0
0
Min.
90
—
—
—
0
0
0
0
Min.
120
—
—
—
0
0
0
0
Max.
—
120
120
60
—
—
50
—
Unit
ns
ns
ns
ns
ns
ns
ns
ns
Program (Erase/Program) Cycle
Parameter
Name
Parameter
t
WC
t
AS
t
AH
t
CS
t
CH
t
OES
t
OEH
t
WP
t
WPH
t
DS
t
DH
t
WHWH1
t
WHWH2
t
WHWH3
Write Cycle Time
Address Setup Time
Address Hold Time
CE Setup Time
CE Hold Time
OE Setup Time
OE High Hold Time
WE Pulse Width
WE Pulse Width High
Data Setup Time
Data Hold Time
Programming Cycle
Sector Erase Cycle
Chip Erase Cycle
-70
Min.
70
0
45
0
0
0
0
35
20
30
0
—
—
—
-90
Max.
—
—
—
—
—
—
—
—
—
—
—
35
10
3.0
-12
Max.
—
—
—
—
—
—
—
—
—
—
—
35
10
3.0
Typ.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Min.
90
0
45
0
0
0
0
45
30
30
0
—
—
—
Typ.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Min.
120
0
50
0
0
0
0
50
35
30
0
—
—
—
Typ.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Max.
—
—
—
—
—
—
—
—
—
—
—
35
10
3.0
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µ
s
ms
sec
S29C51004T/S29C51004B
V1.0 May 2002
5
Embedded System
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