SemiWell
Semiconductor
SBP13003
High Voltage Fast-Switching NPN Power Transistor
Features
- Very High Switching Speed
- Minimum Lot-to-Lot hFE Variation
- Short storge time
- Wide Reverse Bias S.O.A
Symbol
○
2.Collector
1.Base
○
○
3.Emitter
General Description
TO-220
This devices is designed for high voltage, high speed switching
characteristic,especially suitable for ballast sysytem.
1
2
3
Absolute Maximum Ratings
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
P
C
T
STG
T
J
Parameter
Collector-Emitter Voltage ( V
BE
= 0 )
Collector-Emitter Voltage ( I
B
= 0 )
Emitter-Base Voltage ( I
C
= 0 )
Collector Current
Collector Peak Current ( t
P
＜
5 ms
)
Base Current
Total Dissipation at T
C
= 25 °C
Storage Temperature
Max. Operating Junction Temperature
Value
700
400
9.0
1.5
3
0.75
20
- 65 ~ 150
150
Units
V
V
V
A
A
A
W
°C
°C
Thermal Characteristics
Symbol
R
θJC
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Value
1.56
62.5
Units
°C/W
°C/W
Jan, 2007. Rev. 0
1/4
SBP13003
Electrical Characteristics
Symbol
I
CEV
( T
C
= 25 °C unless otherwise noted )
Parameter
Collector Cut-off Current
( V
BE
= - 1.5V )
Collector-Emitter Sustaining Voltage
( I
B
= 0 )
Condition
V
CE
= 700V
V
CE
= 700V
I
C
= 10 mA
I
C
= 0.5A
I
C
= 1.0A
I
C
= 1.5A
I
I
B
= 0.1A
I
B
= 0.25A
I
B
= 1.0A
T
C
= 100 °C
I
C
= 0.5A
I
C
= 1.0A
I
B
= 0.1A
I
B
= 0.25A
T
C
= 100 °C
T
C
= 100 °C
Min
-
Typ
-
Max
1.0
5.0
-
Units
mA
V
CEO(sus)
400
-
V
V
CE(sat)
Collector-Emitter Saturation Voltage
-
-
0.5
1.0
3.0
V
V
BE(sat)
Base-Emitter Saturation Voltage
-
-
1.0
1.2
V
h
FE
DC Current Gain
I
C
= 0.5A
I
C
= 1.0A
V
CC
= 5V
V
CE
= 2V
V
CE
= 2V
I
C
= 0.5A
10
5
-
40
40
t
s
t
f
Storage Time
Fall Time
-
2
4
0.8
㎲
※
Notes :
Pulse Test : Pulse width
≤
300㎲, Duty cycle
≤
2%
2/4
MEMS sensors
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