SD103AWS-V/103BWS-V/103CWS-V
Vishay Semiconductors
Small Signal Schottky Diodes
Features
• The SD103 series is a metal-on-silicon
Schottky barrier device which is protected
e3
by a PN junction guard ring
• This diode is also available in the
Mini-MELF case with the type designations LL103A
to LL103C, DO35 case with the type designations
SD103A to SD103C and SOD123 case with type
designations SD103AW-V to SD103CW-V
• The low forward voltage drop and fast switching
make it ideal for protection of MOS devices, steer-
ing, biasing, and coupling diodes for fast switching
and low logic level applications
• For general purpose applications
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
20145
Mechanical Data
Case:
SOD323 Plastic case
Weight:
approx. 4.3 mg
Packaging Codes/Options:
GS18/10 k per 13" reel (8 mm tape), 10 k/box
GS08/3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Part
SD103AWS-V
SD103BWS-V
SD103CWS-V
Ordering code
SD103AWS-V-GS18 or SD103AWS-V-GS08
SD103BWS-V-GS18 or SD103BWS-V-GS08
SD103CWS-V-GS18 or SD103CWS-V-GS08
Type Marking
S6
S7
S8
Remarks
Tape and Reel
Tape and Reel
Tape and Reel
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Peak reverse voltage
Test condition
Part
SD103AWS-V
SD103BWS-V
SD103CWS-V
Power dissipation
Single cycle surge
1)
Symbol
V
RRM
V
RRM
V
RRM
P
tot
I
FSM
Value
40
30
20
200
1)
2
Unit
V
V
V
mW
A
10 µs square wave
Valid provided that electrodes are kept at ambient temperature
Thermal Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
1)
Test condition
Symbol
R
thJA
T
j
T
stg
Value
500
1)
125
1)
- 55 to + 150
1)
Unit
K/W
°C
°C
Valid provided that electrodes are kept at ambient temperature
Document Number 85682
Rev. 1.7, 18-Sep-06
www.vishay.com
1
SD103AWS-V/103BWS-V/103CWS-V
Vishay Semiconductors
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Leakage current
Test condition
V
R
= 30 V
V
R
= 20 V
V
R
= 10 V
Forward voltage drop
I
F
= 20 mA
I
F
= 200 mA
Diode capacitance
Reverse recovery time
V
R
= 0 V, f = 1 MHz
I
F
= I
R
= 50 mA to 200 mA,
recover to 0.1 I
R
Part
SD103AWS-V
SD103BWS-V
SD103CWS-V
Symbol
I
R
I
R
I
R
V
F
V
F
C
D
t
rr
50
10
Min
Typ.
Max
5
5
5
370
600
Unit
µA
µA
µA
mV
mV
pF
ns
Typical Characteristics
T
amb
= 25 °C unless otherwise specified
1000
I
F
- Forward Current (mA)
1000
T
amb
= 125 °C
I
R
- Reverse Current (µA)
100
10
1
0.1
0.01
100
10
100 °C
75 °C
50 °C
1
0.1
0.01
0
20084
25 °C
0
0.2
0.4
0.6
0.8
1.0
5
10 15 20 25 30 35 40 45 50
V
R
- Reverse
Voltage
(V)
18488
V
F
- Forward
Voltage
(V)
Figure 1. Typical Variation of Forward Current vs. Forward Voltage
Figure 3. Typical Variation of Reverse Current at Various
Temperatures
5
4
3
2
1
0
0
18489
100
C
D
- Diode Capacitance (pF)
1.0
1.5
18491
t
p
= 300 ms
duty cycle = 2 %
I
F
- Forward Current (A)
10
0.5
1
0
10
20
30
40
50
V
R
- Reverse
Voltag
e (V)
V
F
- Forward
Voltage
(V)
Figure 2. Typical High Current Forward Conduction Curve
Figure 4. Diode Capacitance vs. Reverse Voltage
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2
Document Number 85682
Rev. 1.7, 18-Sep-06
SD103AWS-V/103BWS-V/103CWS-V
Vishay Semiconductors
50
V
R
- Reverse
Voltage
(V)
40
100 mA
30
I
F
= 400 mA
20
10
0
200 mA
0
100
T
amb
- Ambient Temperature (°C)
200
18492
Figure 5. Blocking Voltage Deration vs. Temperature at Various
Average Forward Currents
Package Dimensions in mm (Inches): SOD323
1.15 (0.045)
0.8 (0.031)
0.1 (0.004) max
foot print recommendation:
0.25 (0.010) min
1.95 (0.077)
1.60 (0.063)
cathode
bar
0.15 (0.006)
0.10 (0.004)
0.6 (0.024)
0.6 (0.024)
0.40 (0.016)
0.20 (0.008)
2.85 (0.112)
2.50 (0.098)
Document no.: S8-V-3910.02-001 (4)
Rev. 03 - Date: 08.November 2004
17443
Document Number 85682
Rev. 1.7, 18-Sep-06
1.5 (0.059)
1.1 (0.043)
1.6 (0.063)
0.6 (0.024)
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3
SD103AWS-V/103BWS-V/103CWS-V
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
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Document Number 85682
Rev. 1.7, 18-Sep-06
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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