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SD103AWS-V

Description
40 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size69KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric Compare View All

SD103AWS-V Overview

40 V, SILICON, SIGNAL DIODE

SD103AWS-V Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionROHS COMPLIANT, PLASTIC PACKAGE-2
Lead-freeYes
EU RoHS regulationsYes
China RoHS regulationsYes
stateDISCONTINUED
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingtin
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
CraftsmanshipSCHOTTKY
structuresingle
Diode component materialssilicon
Maximum power consumption limit0.2000 W
Diode typeSignal diode
Maximum reverse recovery time0.0100 us
Maximum repetitive peak reverse voltage40 V
SD103AWS-V/103BWS-V/103CWS-V
Vishay Semiconductors
Small Signal Schottky Diodes
Features
• The SD103 series is a metal-on-silicon
Schottky barrier device which is protected
e3
by a PN junction guard ring
• This diode is also available in the
Mini-MELF case with the type designations LL103A
to LL103C, DO35 case with the type designations
SD103A to SD103C and SOD123 case with type
designations SD103AW-V to SD103CW-V
• The low forward voltage drop and fast switching
make it ideal for protection of MOS devices, steer-
ing, biasing, and coupling diodes for fast switching
and low logic level applications
• For general purpose applications
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
20145
Mechanical Data
Case:
SOD323 Plastic case
Weight:
approx. 4.3 mg
Packaging Codes/Options:
GS18/10 k per 13" reel (8 mm tape), 10 k/box
GS08/3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Part
SD103AWS-V
SD103BWS-V
SD103CWS-V
Ordering code
SD103AWS-V-GS18 or SD103AWS-V-GS08
SD103BWS-V-GS18 or SD103BWS-V-GS08
SD103CWS-V-GS18 or SD103CWS-V-GS08
Type Marking
S6
S7
S8
Remarks
Tape and Reel
Tape and Reel
Tape and Reel
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Peak reverse voltage
Test condition
Part
SD103AWS-V
SD103BWS-V
SD103CWS-V
Power dissipation
Single cycle surge
1)
Symbol
V
RRM
V
RRM
V
RRM
P
tot
I
FSM
Value
40
30
20
200
1)
2
Unit
V
V
V
mW
A
10 µs square wave
Valid provided that electrodes are kept at ambient temperature
Thermal Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
1)
Test condition
Symbol
R
thJA
T
j
T
stg
Value
500
1)
125
1)
- 55 to + 150
1)
Unit
K/W
°C
°C
Valid provided that electrodes are kept at ambient temperature
Document Number 85682
Rev. 1.7, 18-Sep-06
www.vishay.com
1

SD103AWS-V Related Products

SD103AWS-V SD103BWS-V SD103CWS-V SD103CWS-V-GS18
Description 40 V, SILICON, SIGNAL DIODE 40 V, SILICON, SIGNAL DIODE 40 V, SILICON, SIGNAL DIODE 20 V, SILICON, SIGNAL DIODE
Number of terminals 2 2 2 2
Number of components 1 1 1 1
surface mount Yes Yes Yes YES
Terminal form GULL WING GULL WING GULL WING GULL WING
Terminal location pair pair pair DUAL
Diode component materials silicon silicon silicon SILICON
Diode type Signal diode Signal diode Signal diode RECTIFIER DIODE
Maximum reverse recovery time 0.0100 us 0.0100 us 0.0100 us 0.01 µs
Maximum repetitive peak reverse voltage 40 V 40 V 40 V 20 V
Processing package description ROHS COMPLIANT, PLASTIC PACKAGE-2 ROHS COMPLIANT, PLASTIC PACKAGE-2 ROHS COMPLIANT, PLASTIC PACKAGE-2 -
Lead-free Yes Yes Yes -
EU RoHS regulations Yes Yes Yes -
China RoHS regulations Yes Yes Yes -
state DISCONTINUED DISCONTINUED DISCONTINUED -
packaging shape Rectangle Rectangle Rectangle -
Package Size SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE -
terminal coating tin tin tin -
Packaging Materials Plastic/Epoxy Plastic/Epoxy Plastic/Epoxy -
Craftsmanship SCHOTTKY SCHOTTKY SCHOTTKY -
structure single single single -
Maximum power consumption limit 0.2000 W 0.2000 W 0.2000 W -
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