SD303C..C Series
Vishay High Power Products
Fast Recovery Diodes
(Hockey PUK Version), 350 A
FEATURES
• High power FAST recovery diode series
• 1.0 to 2.0 µs recovery time
• High voltage ratings up to 2500 V
• High current capability
• Optimized turn-on and turn-off characteristics
DO-200AA
RoHS
COMPLIANT
• Low forward recovery
• Fast and soft reverse recovery
• Press PUK encapsulation
• Case style conform to JEDEC DO-200AA
• Maximum junction temperature 125 °C
PRODUCT SUMMARY
I
F(AV)
350 A
• Lead (Pb)-free
TYPICAL APPLICATIONS
• Snubber diode for GTO
• High voltage freewheeling diode
• Fast recovery rectifier applications
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
F(AV)
TEST CONDITIONS
VALUES
350
T
hs
55
550
I
F(RMS)
T
hs
50 Hz
I
FSM
60 Hz
50 Hz
60 Hz
V
RRM
t
rr
T
J
Range
25
5770
A
6040
166
152
400 to 2500
1.0 to 2.0
T
J
25
°C
- 40 to 125
V
µs
kA
2
s
UNITS
A
°C
A
°C
I
2
t
Document Number: 93174
Revision: 04-Aug-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
1
SD303C..C Series
Vishay High Power Products
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
04
SD303C..S10C
08
10
12
SD303C..S15C
14
16
SD303C..S20C
20
25
V
RRM
, MAXIMUM REPETITIVE PEAK
AND OFF-STATE VOLTAGE
V
400
800
1000
1200
1400
1600
2000
2500
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
500
900
1100
1300
1500
1700
2100
2600
35
I
RRM
MAXIMUM
AT T
J
= 125 °C
mA
Fast Recovery Diodes
(Hockey PUK Version), 350 A
FORWARD CONDUCTION
PARAMETER
Maximum average forward current
at heatsink temperature
Maximum RMS current
SYMBOL
I
F(AV)
I
F(RMS)
TEST CONDITIONS
180° conduction, half sine wave
Double side (single side) cooled
25 °C heatsink temperature double side cooled
t = 10 ms
Maximum peak, one-cycle ,
non-repetitive forward current
I
FSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I
2
√t
for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level of forward slope resistance
High level of forward slope resistance
Maximum forward voltage drop
I
2
√t
V
F(TO)1
V
F(TO)2
r
f1
r
f2
V
FM
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
VALUES
350 (175)
55 (75)
550
5770
6040
4850
Sinusoidal half wave,
initial T
J
= T
J
maximum
5080
166
152
117
107
1660
1.14
1.63
1.14
0.77
2.26
kA
2
√s
V
kA
2
s
A
UNITS
A
°C
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x
π
x I
F(AV)
< I <
π
x I
F(AV)
), T
J
= T
J
maximum
(I >
π
x I
F(AV)
), T
J
= T
J
maximum
(16.7 % x
π
x I
F(AV)
< I <
π
x I
F(AV)
), T
J
= T
J
maximum
(I >
π
x I
F(AV)
), T
J
= T
J
maximum
I
pk
= 1100 A, T
J
= 25 °C; t
p
= 10 ms sinusoidal wave
mΩ
V
RECOVERY CHARACTERISTICS
MAXIMUM VALUE
AT T
J
= 25 °C
CODE
t
rr
AT 25 % I
RRM
(µs)
1.0
1.5
2.0
750
25
- 30
TEST CONDITIONS
I
pk
SQUARE
PULSE
(A)
TYPICAL VALUES
AT T
J
= 125 °C
V
r
(V)
t
rr
AT 25 % I
RRM
(µs)
2.4
2.9
3.2
Q
rr
(µC)
52
90
107
I
rr
(A)
33
44
46
I
FM
dI/dt
(A/µs)
t
rr
t
Q
rr
I
RM(REC)
S10
S15
S20
dir
dt
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For technical questions, contact: ind-modules@vishay.com
Document Number: 93174
Revision: 04-Aug-08
SD303C..C Series
Fast Recovery Diodes
Vishay High Power Products
(Hockey PUK Version), 350 A
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum operating temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to heatsink
Mounting force, ± 10 %
Approximate weight
Case style
See dimensions - link at the end of datasheet
SYMBOL
T
J
T
Stg
DC operation single side cooled
R
thJ-hs
DC operation double side cooled
TEST CONDITIONS
VALUES
- 40 to 125
°C
- 40 to 150
0.16
K/W
0.08
4900 (500)
70
DO-200AA
N (kg)
g
UNITS
ΔR
thJ-hs
CONDUCTION
SINUSOIDAL CONDUCTION
CONDUCTION ANGLE
SINGLE SIDE
180°
120°
90°
60°
30°
0.010
0.012
0.016
0.024
0.042
DOUBLE SIDE
0.011
0.013
0.016
0.024
0.042
SINGLE SIDE
0.008
0.013
0.018
0.025
0.042
DOUBLE SIDE
0.008
0.013
0.018
0.025
0.042
T
J
= T
J
maximum
K/W
RECTANGULAR CONDUCTION
TEST CONDITIONS
UNITS
Note
• The table above shows the increment of thermal resistance R
thJ-hs
when devices operate at different conduction angles than DC
Document Number: 93174
Revision: 04-Aug-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
3
SD303C..C Series
Vishay High Power Products
Fast Recovery Diodes
(Hockey PUK Version), 350 A
130
Maximum Allow able Heatsink Temperature (°C)
120
110
100
90
80
70
60
50
40
0
100
200
300
400
500
600
Average Forwa rd Curren t (A)
30°
60°
90°
120°
180°
DC
C o ndu c tio n Pe rio d
130
Maxim um Allow able Heatsink Tem perature (°C)
120
110
100
90
80
70
60
0
20
40
60
SD303C..C Series
(Sin gle Side Cooled)
R
th J-hs
(DC) = 0.16 K/W
SD303C..C Series
(D ouble Side Cooled)
R
th J- hs
(DC) = 0.08 K/W
C o nduc tio n A ng le
180°
30°
60°
90°
120°
80 100 120 140 160 180
Averag e Forw ard Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
1 30
M a x im um A llo w a b le H ea t sin k T e m p e ra t u re (° C )
M a x im u m A v e ra g e F o rw a rd P o w e r Lo ss (W )
1 20
1 10
1 00
90
80
70
60
50
0
50
10 0
150
2 00
250
3 00
A v e ra g e F o r w a rd C u rre n t (A )
30°
60°
90°
120°
180°
DC
C o ndu c tio n P e rio d
8 00
S D 3 0 3 C ..C S e rie s
(S in g le Sid e C o o le d )
R
thJ-hs
(D C ) = 0 .1 6 K /W
7 00
6 00
5 00
4 00
3 00
C o nduc tio n An g le
1 8 0°
1 2 0°
90°
60°
30°
R M S Lim it
2 00
1 00
0
0
50
1 0 0 1 5 0 20 0 25 0 30 0 3 5 0 4 00
A v e ra g e F o rw a rd C u rre n t (A )
SD 3 0 3 C ..C Se rie s
T
J
= 1 2 5°C
Fig. 2 - Current Ratings Characteristics
Fig. 5 - Forward Power Loss Characteristics
M a xim u m A v e r a ge Fo rw a rd Po w e r Lo ss (W )
130
Maxim um Allow able Heatsink Tem perature (°C)
120
110
100
90
80
70
60
50
40
0
50
1 00 0
SD303C..C Series
(D ouble Side Cooled)
R
thJ-h s
(DC) = 0.08 K/W
9 00
8 00
7 00
6 00
DC
1 8 0°
1 2 0°
90°
60°
30°
C o nduc tio n A ng le
5 0 0 R M S Lim it
4 00
3 00
2 00
1 00
0
0
100
2 00
3 00
400
5 00
6 00
A v e ra g e Fo rw a rd C u r re n t (A )
SD 3 0 3 C ..C Se rie s
T
J
= 1 2 5°C
C o ndu ct io n Pe rio d
30°
60°
90°
120°
180°
100 150 200 250 300 350 400
Average Forward Curren t (A)
Fig. 3 - Current Ratings Characteristics
Fig. 6 - Forward Power Loss Characteristics
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For technical questions, contact: ind-modules@vishay.com
Document Number: 93174
Revision: 04-Aug-08
SD303C..C Series
Fast Recovery Diodes
Vishay High Power Products
(Hockey PUK Version), 350 A
55 0 0
P e a k H a lf S in e W a v e Fo rw a rd C u rr e n t (A )
50 0 0
45 0 0
40 0 0
35 0 0
30 0 0
25 0 0
20 0 0
1
10
1 00
N um be r O f E qua l Am p litude Ha lf C yc le C urrent Pulses (N )
In st a n t a n e o u s Fo rw a rd C urre n t (A )
A t A n y Ra t e d Lo a d C o n d it io n A n d W ith
R a t e d V
RRM
A p p lie d F o llo w in g Su rg e .
In itia l T
J
= 1 2 5°C
@ 6 0 H z 0 .0 0 8 3 s
@ 5 0 H z 0 .0 1 0 0 s
10000
SD 3 0 3 C ..C Se r ie s
1 000
100
T
J
= 2 5 ° C
T
J
= 1 2 5 ° C
SD 3 0 3 C ..C Se r ie s
10
0
1
2
3
4
5
6
7
8
In sta n t a n e o us Fo rw a rd V o lta g e (V )
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 9 - Forward Voltage Drop Characteristics
6000
P e a k H a lf Sine W a v e Fo rw a rd C urr e n t (A )
5500
5000
4500
4000
3500
3000
2500
2000
M a x im u m N o n R e p e t itiv e S u rg e C u rre n t
V e r su s P u lse T ra in D u ra t io n .
In itia l T
J
= 1 2 5 ° C
N o V o lt a g e R e a p p lie d
R a t e d V
RR M
e a p p lie d
R
1
(K / W )
St e a d y S ta t e V a lu e
R
thJ-hs
= 0 .1 6 K / W
( Sin g le Sid e C o o le d)
0 .1
R
thJ-h s
= 0 .0 8 K / W
( D o u b le S id e C o o le d )
( D C O p e ra tio n )
T ra n sie n t T h e rm a l I m p e d a n c e Z
thJ-hs
0 .0 1
SD 3 0 3 C ..C Se rie s
0 .0 0 1
0 .0 0 0 1 0 .0 0 1
S D 3 0 3 C ..C Se rie s
0.1
P u lse T ra in D u ra t io n (s)
1
1500
0.01
0 .0 1
0 .1
1
10
10 0
Sq u a re W a v e Pu lse D ur at io n ( s)
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 10 - Thermal Impedance Z
thJ-hs
Characteristic
1 20
V
1 00
F o rw a rd R e c o v e ry ( V )
80
FP
I
T = 1 2 5°C
J
60
T
J
= 2 5°C
40
20
S D 3 0 3 C ..S2 0 C Se rie s
0
0
20 0
40 0
600
8 00
10 0 0
12 00
1 40 0
1 60 0
18 0 0
200 0
R at e O f f F a ll O f F o rw a rd C u rre n t d i/ d t ( A / u se c )
Fig. 11 - Typical Forward Recovery Characteristics
Document Number: 93174
Revision: 04-Aug-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
5