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SF55T-G

Description
5 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD
CategoryDiscrete semiconductor    diode   
File Size83KB,4 Pages
ManufacturerComchip Technology
Websitehttp://www.comchiptech.com/
Environmental Compliance
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SF55T-G Overview

5 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD

SF55T-G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerComchip Technology
package instructionO-PALF-W2
Reach Compliance Codecompli
ECCN codeEAR99
applicationEFFICIENCY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.25 V
JEDEC-95 codeDO-27
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current150 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
Maximum output current5 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage300 V
Maximum reverse current5 µA
Maximum reverse recovery time0.04 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Super Fast Rectifiers
SF51-G Thru. SF58-G
Reverse Voltage: 50 to 600 Volts
Forward Current: 5.0 Amp
RoHS Device
Features
-Supper fast switching time for high efficiency.
-Low forward voltage drop.
-High current capability.
-Low reverse leakage current.
-Plastic material has UL flammability classification 94V-0
1.0(25.4) min.
0.052(1.30)
DIA.
0.048(1.20)
DO-27
Mechanical data
-Case: Molded plastic, JEDEC DO-27 molded plastic.
-Terminals: Solderable per MIL-STD-750, method 2026.
-Polarity: Color band denotes cathode.
-Mounting position: Any.
-Weight: 1.1 grams approx.
1.0(25.4) min.
0.375(9.50)
0.335(8.50)
0.220(5.60)
DIA.
0.197(5.00)
Dimensions in inches and (millimeter)
Maximum Ratings and Electrical Characteristics
Ratings at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load derate current by 20%.
Parameter
Max. repetitive peak reverse voltage
Max. DC blocking voltage
Max. RMS voltage
Max. averaged forward rectified current
@T
A
=55°C
Forward surge current, 8.3ms single
half sine-wave superimposed on rated
load (JEDEC method)
Peak forward voltage at I
F
=4.0A DC
Max. Reverse recovery time (Note 1)
Typical Junction capacitance (Note 2)
Max. DC reverse current
@T
J
=25°C
Symbol
SF51-G
V
RRM
V
DC
V
RMS
I
O
I
FSM
V
F
T
rr
C
J
I
R
I
R
R
θJA
T
J
T
STG
50
50
35
SF52-G
100
100
70
SF53-G
150
150
105
SF54-G
200
200
140
5.0
150
SF55-G
300
300
210
SF56-G
400
400
280
SF58-G
600
600
420
Unit
V
V
V
A
A
0.95
35
90
5.0
100
10
-55 to +125
-55 to +150
1.25
40
75
1.30
50
V
nS
pF
μA
°C/W
°C
°C
at rated DC bolcking voltage @T
J
=100°C
Typical. thermal resistance (Note 3)
Operating junction temperature
Storage temperature range
Note 1. Measured with I
F
=0.5A, I
R
=1A, I
RR
=0.25A
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. Thermal resistance junction to ambient.
Company reserves the right to improve product design , functions and reliability without notice.
QW-BS007
REV: A
Page 1
Comchip Technology CO., LTD.

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