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RN1302

Description
Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
CategoryDiscrete semiconductor    The transistor   
File Size248KB,7 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

RN1302 Overview

Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

RN1302 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerToshiba Semiconductor
Parts packaging codeSC-70
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresBUILT IN BIAS RESISTANCE RATIO IS 1
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)50
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power dissipation(Abs)0.1 W
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz
RN1301~RN1306
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1301,RN1302,RN1303
RN1304,RN1305,RN1306
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
l
With built-in bias resistors.
l
Simplify circuit design
l
Reduce a quantity of parts and manufacturing process
l
Complementary to RN2301~RN2306
Unit: mm
Equivalent Circuit and Bias Resistor Values
Type No.
RN1301
RN1302
RN1303
RN1304
RN1305
RN1306
R1 (kΩ)
4.7
10
22
47
2.2
4.7
R2 (kΩ)
4.7
10
22
47
47
47
Maximum Ratings
(Ta = 25°C)
°
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN1301~1306
RN1301~1306
RN1301~1304
RN1305, 1306
Symbol
V
CBO
V
CEO
V
EBO
I
c
P
c
T
j
T
stg
Rating
50
50
10
5
100
100
150
−55~150
JEDEC
EIAJ
TOSHIBA
Weight: 0.006g
SC-70
2-2E1A
Unit
V
V
V
mA
mW
°C
°C
1
2001-06-07

RN1302 Related Products

RN1302 RN1304
Description Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
Is it Rohs certified? conform to conform to
Maker Toshiba Semiconductor Toshiba Semiconductor
Parts packaging code SC-70 SC-70
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Contacts 3 3
Reach Compliance Code unknow unknow
ECCN code EAR99 EAR99
Other features BUILT IN BIAS RESISTANCE RATIO IS 1 BUILT IN BIAS RESISTANCE RATIO IS 1
Maximum collector current (IC) 0.1 A 0.1 A
Collector-emitter maximum voltage 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 50 80
JESD-30 code R-PDSO-G3 R-PDSO-G3
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type PNP PNP
Maximum power dissipation(Abs) 0.1 W 0.1 W
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 200 MHz 200 MHz

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