IRF510, SiHF510
www.vishay.com
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
()
Q
g
max. (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
8.3
2.3
3.8
Single
D
FEATURES
100
0.54
•
•
•
•
•
•
•
Dynamic dV/dt rating
Available
Repetitive avalanche rated
175 °C operating temperature
Available
Fast switching
Ease of paralleling
Simple drive requirements
Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
TO-220AB
G
Note
*
This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.
DESCRIPTION
G
D
S
S
N-Channel MOSFET
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
ORDERING INFORMATION INFORMATION
Package
Lead (Pb)-free
SnPb
TO-220AB
IRF510PbF
SiHF510-E3
IRF510
SiHF510
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain
Current
a
b
SYMBOL
V
DS
V
GS
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
I
D
I
DM
E
AS
I
AR
E
AR
T
C
= 25 °C
P
D
dV/dt
T
J
, T
stg
for 10 s
6-32 or M3 screw
d
LIMIT
100
± 20
5.6
4.0
20
0.29
75
5.6
4.3
43
5.5
-55 to +175
300
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
Linear Derating Factor
Single Pulse Avalanche Energy
Repetitive Avalanche
Current
a
Repetitive Avalanche Energy
a
Maximum Power Dissipation
Peak Diode Recovery dV/dt
c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak temperature)
Mounting Torque
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 25 V, starting T
J
= 25 °C, L = 4.8 mH, R
g
= 25
,
I
AS
= 5.6 A (see fig. 12).
c. I
SD
5.6 A, dI/dt
75 A/μs, V
DD
V
DS
, T
J
175 °C.
d. 1.6 mm from case.
S15-2693-Rev. C, 16-Nov-15
Document Number: 91015
1
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF510, SiHF510
www.vishay.com
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SYMBOL
R
thJA
R
thCS
R
thJC
TYP.
-
0.50
-
MAX.
62
-
3.5
°C/W
UNIT
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
Current
a
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
V
DS
/T
J
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
V
GS
= 0 V, I
D
= 250 μA
Reference to 25 °C, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250 μA
V
GS
= ± 20 V
V
DS
= 100 V, V
GS
= 0 V
V
DS
= 80 V, V
GS
= 0 V, T
J
= 150 °C
V
GS
= 10 V
I
D
=3.4 A
b
100
-
2.0
-
-
-
-
1.3
-
-
-
-
-
-
-
-
-
-
-
0.12
-
-
-
-
-
-
180
81
15
-
-
-
6.9
16
15
9.4
4.5
7.5
-
-
4.0
± 100
25
V
V/°C
V
nA
μA
250
0.54
-
-
-
-
8.3
2.3
3.8
-
-
-
-
-
nH
-
ns
nC
pF
S
V
DS
= 50 V, I
D
= 3.4 A
b
V
GS
= 0 V,
V
DS
= 25 V,
f = 1.0 MHz, see fig. 5
I
D
= 5.6 A, V
DS
= 80 V
V
GS
= 10 V
V
DS
= 10 V,
see fig. 6 and fig. 13
b
V
DD
= 50 V, I
D
= 5.6 A
R
g
= 24
,
R
D
= 8.4, see fig. 10
b
Between lead,
6 mm (0.25") from
package and center of
die contact
D
-
-
G
S
-
-
-
-
-
-
-
-
100
0.44
5.6
A
20
2.5
200
0.88
V
ns
μC
G
S
T
J
= 25 °C, I
S
= 5.6 A, V
GS
= 0 V
b
T
J
= 25 °C, I
F
= 5.6 A, dI/dt = 100 A/μs
b
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width
300 μs; duty cycle
2 %.
S15-2693-Rev. C, 16-Nov-15
Document Number: 91015
2
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF510, SiHF510
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
- 60 - 40 - 20 0
Vishay Siliconix
10
1
I
D
, Drain Current (A)
V
GS
Top
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
I
D
= 5.6 A
V
GS
= 10 V
10
0
4.5 V
20 µs pulse width
T
C
=
25 °C
10
-1
10
0
10
1
20 40 60 80 100 120 140 160 180
91015_01
V
DS
, Drain-to-Source Voltage (V)
91015_04
T
J,
Junction Temperature (°C)
Fig. 1 - Typical Output Characteristics, T
C
= 25 °C
Fig. 4 - Normalized On-Resistance vs. Temperature
10
1
I
D
, Drain Current (A)
Capacitance (pF)
10
0
V
GS
Top
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
400
320
V
GS
= 0 V, f = 1 MHz
C
iss
= C
gs
+ C
gd
, C
ds
shorted
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
240
C
iss
160
C
oss
4.5 V
80
20 µs pulse width
T
C
=
175 °C
10
-1
91015_02
C
rss
0
10
0
91015_05
10
0
10
1
10
1
V
DS,
Drain-to-Source Voltage (V)
V
DS,
Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics, T
C
= 175 °C
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
10
1
20
V
GS
, Gate-to-Source Voltage (V)
25
°
C
175
°
C
I
D
= 5.6 A
V
DS
= 80 V
V
DS
= 50 V
V
DS
= 20 V
I
D
, Drain Current (A)
16
12
10
0
8
4
For test circuit
see figure 13
10
-1
4
91015_03
20 µs pulse width
V
DS
=
50 V
5
6
7
8
9
10
0
0
91015_06
2
4
6
8
10
V
GS,
Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
Q
G
, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
S15-2693-Rev. C, 16-Nov-15
Document Number: 91015
3
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF510, SiHF510
www.vishay.com
Vishay Siliconix
6.0
I
SD
, Reverse Drain Current (A)
175
°
C
5.0
I
D
, Drain Current (A)
V
GS
= 0 V
0.8
0.9
1.0
1.1
1.2
91015_09
4.0
3.0
2.0
1.0
0.0
25
50
75
100
125
150
175
10
0
25
°
C
10
-1
0.5
91015_07
0.6
0.7
V
SD
, Source-to-Drain Voltage (V)
T
C
, Case Temperature (°C)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 9 - Maximum Drain Current vs. Case Temperature
R
D
10
2
5
Operation in this area limited
by R
DS(on)
R
G
100
µs
V
DS
V
GS
D.U.T.
+
-
V
DD
I
D
, Drain Current (A)
2
10
5
10 V
1
ms
10
ms
Pulse width
≤
1 µs
Duty factor
≤
0.1 %
2
1
5
Fig. 10a - Switching Time Test Circuit
T
C
= 25
°C
T
J
= 175
°C
single pulse
1
2
5
2
V
DS
10
2
2
5
0.1
10
2
5
10
3
90 %
91015_08
V
DS
, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
10 %
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig. 10b - Switching Time Waveforms
10
Thermal Response (Z
thJC
)
0 - 0.5
1
0.2
0.1
0.05
0.02
0.01
P
DM
t
1
t
2
Notes:
1. Duty factor, D = t
1
/t
2
2. Peak T
j
= P
DM
x Z
thJC
+ T
C
10
-5
10
-4
10
-3
10
-2
0.1
1
10
0.1
Single pulse
(thermal response)
10
-2
91015_11
t
1
, Rectangular Pulse Duration (s)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
S15-2693-Rev. C, 16-Nov-15
Document Number: 91015
4
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF510, SiHF510
www.vishay.com
Vishay Siliconix
L
Vary t
p
to obtain
required I
AS
R
G
V
DS
10 V
Q
G
D.U.T
I
AS
+
-
Q
GS
Q
GD
V
DD
10 V
t
p
0.01
Ω
V
G
A
Charge
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 13a - Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
V
DS
50 kΩ
t
p
V
DD
V
DS
12 V
0.2 µF
0.3 µF
+
D.U.T.
V
GS
-
V
DS
I
AS
3 mA
I
G
I
D
Current sampling resistors
Fig. 12b - Unclamped Inductive Waveforms
Fig. 13b - Gate Charge Test Circuit
300
E
AS
, Single Pulse Energy (mJ)
250
200
150
100
50
V
DD
= 25 V
0
25
50
75
100
I
D
2.3 A
4.0 A
Bottom 5.6 A
Top
125
150
175
91015_12c
Starting T
J
, Junction Temperature (°C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
S15-2693-Rev. C, 16-Nov-15
Document Number: 91015
5
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
京公网安备 11010802033920号
EEWORLD
