EEWORLDEEWORLDEEWORLD

Part Number

Search

SIHF634NSTR-E3

Description
Power MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size128KB,8 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
Download Datasheet Parametric View All

SIHF634NSTR-E3 Overview

Power MOSFET

SIHF634NSTR-E3 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerVishay
Parts packaging codeD2PAK
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts4
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresHIGH RELIABILITY, AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)110 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage250 V
Maximum drain current (Abs) (ID)8 A
Maximum drain current (ID)8 A
Maximum drain-source on-resistance0.435 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-263AB
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)88 W
Maximum pulsed drain current (IDM)32 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
34
6.5
16
Single
250
0.435
FEATURES
• Advanced Process Technology
• Dynamic dV/dt Rating
• 175 °C Operating Temperature
• Fast Switching
• Fully Avalanche Rated
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
Fifth generation Power MOSFETs from Vishay utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a
wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
The D
2
PAK (TO-263) is a surface mount power package
capable of accommodating die sizes up to HEX-4. It provides
the highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D
2
PAK (TO-263) is suitable for high current applications
because of its low internal connection resistance and can
dissipate up to 2.0 W in a typical surface mount application.
The through-hole version (IRF634NL, SiHF634NL) is
available for low-profile application.
I
2
PAK (TO-262)
TO-220
D
S
S
G
D
G
D
G
D
2
PAK (TO-263)
S
N-Channel
MOSFET
G D
S
ORDERING INFORMATION
Package
Lead (Pb)-free
SiHF634N-E3
IRF634N
SnPb
SiHF634N
Note
a. See device orientation.
SiHF634NS
SiHF634NSTL
a
SiHF634NSTR
a
-
SiHF634NS-E3
IRF634NS
SiHF634NSTL-E3
a
IRF634NSTRL
a
SiHF634NSTR-E3
a
IRF634NSTRR
a
SiHF634NL-E3
-
TO-220
IRF634NPbF
D
2
PAK (TO-263)
IRF634NSPbF
D
2
PAK (TO-263)
IRF634NSTRLPbF
a
D
2
PAK (TO-263)
IRF634NSTRRPbF
a
I
2
PAK (TO-262)
IRF634NLPbF
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91033
S-82999-Rev. A, 12-Jan-09
www.vishay.com
1
Can you learn dsp without hardware? At some point you will need hardware.
I want to learn dsp but I don't have the hardware, only ccs. It is said that you can't learn well without hardware, but can I learn to a certain extent without hardware, and at what stage must I verif...
wanggq DSP and ARM Processors
Help, Verilog beginner question, urgent
I wrote a four-to-one data selector, but when I compiled it in quatus, this error occurred. I don’t know why. Please help me analyze it. It is related to my confidence in learning it. Help!!! Error (1...
holly8301 Embedded System
About the baud rate of the 51 microcontroller serial port
[font=微软雅黑][size=4]Usually when we use the serial port, we need to configure the baud rate. For example: [/size][/font][font=微软雅黑][size=4][code]TMOD |= 0x20; //Set timer 1 to 8-bit automatic reload mo...
徐建庆 51mcu
UWB Technology Detailed Explanation
UWB positioning technology plays a revolutionary role in the field of indoor positioning! In the information society, the location information of everything plays a vital role: the placement of each p...
石榴姐 RF/Wirelessly
The SMD transistor only has 702 20 digital markings, I don’t know what model it is?
The SMD transistor only has 702 20 digital markings, I don't know what model it is?? The transistor next to the IDE on the motherboard...
boni110 MCU
Dilemma and Countermeasures of RF Circuit Design
(Huaqiang Electronics World Network) RF circuit design technology was once exclusively mastered by a few experts with their own dedicated chipsets, but now it can be integrated with digital circuit mo...
fighting Analog electronics

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2481  605  438  1556  588  50  13  9  32  12 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号