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SIHFBC20S-E3

Description
2.2 A, 600 V, 4.4 ohm, N-CHANNEL, Si, POWER, MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size331KB,11 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
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SIHFBC20S-E3 Overview

2.2 A, 600 V, 4.4 ohm, N-CHANNEL, Si, POWER, MOSFET

SIHFBC20S-E3 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeD2PAK
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts4
Reach Compliance Codeunknow
Other featuresAVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)84 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage600 V
Maximum drain current (Abs) (ID)2.2 A
Maximum drain current (ID)2.2 A
Maximum drain-source on-resistance4.4 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-263AB
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)50 W
Maximum pulsed drain current (IDM)8 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
IRFBC20S, SiHFBC20S, IRFBC20L, SiHFBC20L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
()
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
18
3.0
8.9
Single
D
600
4.4
Halogen-free According to IEC 61249-2-21
Definition
• Surface Mount (IRFBC20S, SiHFBC20S)
• Low-Profile Through-Hole (IRFBC20L, SiHFBC20L)
• Available in Tape and Reel (IRFBC20, SiiHFBC20S)
• Dynamic dV/dt Rating
• 150 °C Operating Temperature
• Fast Switching
• Fully Avalanche Rated
• Compliant to RoHS Directive 2002/95/EC
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The D
2
PAK is a surface mount power package capable of
the accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D
2
PAK is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0 W in a typical surface mount application. The
through-hole version (IRFBC20L, SiHFBC20L) is a available
for low-profile applications.
FEATURES
I
2
PAK
(TO-262)
D
2
PAK (TO-263)
DESCRIPTION
G
G
D
S
G
D
S
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
Note
a. See device orientation.
D
2
PAK (TO-263)
SiHFBC20S-GE3
IRFBC20SPbF
SiHFBC20S-E3
D
2
PAK (TO-263)
SiHFBC20STRL-GE3
a
IRFBC20STRLPbF
a
SiHFBC20STL-E3
a
I
2
PAK (TO-262)
SiHFBC20L-GE3
IRFBC20LPbF
SiHFBC20L-E3
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
e
Pulsed Drain
Linear Derating Factor
Single Pulse Avalanche Energy
b, e
Avalanche Current
a
Repetiitive Avalanche Energy
a
Maximum Power Dissipation
Peak Diode Recovery dV/dt
c, e
T
A
= 25 °C
T
C
= 25 °C
Current
a, e
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
E
AS
I
AR
E
AR
P
D
dV/dt
LIMIT
600
± 20
2.2
1.4
8.0
0.40
84
2.2
5.0
3.1
50
3.0
- 55 to + 150
300
d
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
Operating Junction and Storage Temperature Range
T
J
, T
stg
Soldering Recommendations (Peak Temperature)
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 50 V, starting T
J
= 25 °C, L = 31 mH, R
g
= 25
,
I
AS
= 2.2 A (see fig. 12).
c. I
SD
2.2 A, dI/dt
40 A/μs, V
DD
V
DS
, T
J
150 °C.
d. 1.6 mm from case.
e. Uses IRFBC20, SiHFBC20 data and test conditions.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91107
S11-1052-Rev. C, 30-May-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

SIHFBC20S-E3 Related Products

SIHFBC20S-E3 SIHFBC20L SIHFBC20L-E3 SIHFBC20S SIHFBC20STL SIHFBC20STL-E3 IRFBC20STRR
Description 2.2 A, 600 V, 4.4 ohm, N-CHANNEL, Si, POWER, MOSFET 2.2 A, 600 V, 4.4 ohm, N-CHANNEL, Si, POWER, MOSFET 2.2 A, 600 V, 4.4 ohm, N-CHANNEL, Si, POWER, MOSFET 2.2 A, 600 V, 4.4 ohm, N-CHANNEL, Si, POWER, MOSFET 2.2 A, 600 V, 4.4 ohm, N-CHANNEL, Si, POWER, MOSFET 2.2 A, 600 V, 4.4 ohm, N-CHANNEL, Si, POWER, MOSFET MOSFET N-CH 600V 2.2A D2PAK
Is it lead-free? Lead free Contains lead Lead free Contains lead Contains lead Lead free Contains lead
Is it Rohs certified? conform to incompatible conform to incompatible incompatible conform to incompatible
package instruction SMALL OUTLINE, R-PSSO-G2 IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2
Contacts 4 3 3 4 4 4 3
Reach Compliance Code unknow unknow unknow unknow unknow unknow unknown
Avalanche Energy Efficiency Rating (Eas) 84 mJ 84 mJ 84 mJ 84 mJ 84 mJ 84 mJ 84 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 600 V 600 V 600 V 600 V 600 V 600 V 600 V
Maximum drain current (Abs) (ID) 2.2 A 2.2 A 2.2 A 2.2 A 2.2 A 2.2 A 2.2 A
Maximum drain current (ID) 2.2 A 2.2 A 2.2 A 2.2 A 2.2 A 2.2 A 2.2 A
Maximum drain-source on-resistance 4.4 Ω 4.4 Ω 4.4 Ω 4.4 Ω 4.4 Ω 4.4 Ω 4.4 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSSO-G2 R-PSIP-T3 R-PSIP-T3 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2
Number of components 1 1 1 1 1 1 1
Number of terminals 2 3 3 2 2 2 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE IN-LINE IN-LINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 240 260 240 240 260 NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 50 W 50 W 50 W 50 W 50 W 50 W 50 W
Maximum pulsed drain current (IDM) 8 A 8 A 8 A 8 A 8 A 8 A 8 A
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES NO NO YES YES YES YES
Terminal form GULL WING THROUGH-HOLE THROUGH-HOLE GULL WING GULL WING GULL WING GULL WING
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature 40 30 40 30 30 40 NOT SPECIFIED
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Parts packaging code D2PAK TO-262AA TO-262AA D2PAK D2PAK D2PAK -
Other features AVALANCHE RATED AVALANCHE RATED AVALANCHE RATED AVALANCHE RATED AVALANCHE RATED AVALANCHE RATED -
Shell connection DRAIN - - DRAIN DRAIN DRAIN DRAIN
JEDEC-95 code TO-263AB TO-262AA TO-262AA TO-263AB TO-263AB TO-263AB -
JESD-609 code e3 e0 e3 e0 e0 e3 -
Terminal surface Matte Tin (Sn) Tin/Lead (Sn/Pb) Matte Tin (Sn) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Matte Tin (Sn) -
Base Number Matches 1 1 1 1 1 1 -
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