SIHFBC20L-E3 datasheet, PDF - EEWORLD Datasheet

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SIHFBC20L-E3: Description2.2 A, 600 V, 4.4 ohm, N-CHANNEL, Si, POWER, MOSFET; CategoryDiscrete semiconductor The transistor; File Size331KB，11 Pages; ManufacturerVishay; Websitehttp://www.vishay.com; Environmental Compliance

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SIHFBC20L-E3 Overview

2.2 A, 600 V, 4.4 ohm, N-CHANNEL, Si, POWER, MOSFET

SIHFBC20L-E3 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Parts packaging code	TO-262AA
package instruction	IN-LINE, R-PSIP-T3
Contacts	3
Reach Compliance Code	unknow
Other features	AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)	84 mJ
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	600 V
Maximum drain current (Abs) (ID)	2.2 A
Maximum drain current (ID)	2.2 A
Maximum drain-source on-resistance	4.4 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-262AA
JESD-30 code	R-PSIP-T3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	50 W
Maximum pulsed drain current (IDM)	8 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	Matte Tin (Sn)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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IRFBC20S, SiHFBC20S, IRFBC20L, SiHFBC20L

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

(V)

DS(on)

()

(Max.) (nC)

(nC)

Configuration

= 10 V

3.0

8.9

Single

600

4.4

•

Halogen-free According to IEC 61249-2-21

Definition

• Surface Mount (IRFBC20S, SiHFBC20S)

• Low-Profile Through-Hole (IRFBC20L, SiHFBC20L)

• Available in Tape and Reel (IRFBC20, SiiHFBC20S)

• Dynamic dV/dt Rating

• 150 °C Operating Temperature

• Fast Switching

• Fully Avalanche Rated

• Compliant to RoHS Directive 2002/95/EC

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The D

PAK is a surface mount power package capable of

the accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible

on-resistance in any existing surface mount package. The

PAK is suitable for high current applications because of

its low internal connection resistance and can dissipate up

to 2.0 W in a typical surface mount application. The

through-hole version (IRFBC20L, SiHFBC20L) is a available

for low-profile applications.

FEATURES

PAK

(TO-262)

PAK (TO-263)

DESCRIPTION

N-Channel MOSFET

ORDERING INFORMATION

Package

Lead (Pb)-free and Halogen-free

Lead (Pb)-free

Note

a. See device orientation.

PAK (TO-263)

SiHFBC20S-GE3

IRFBC20SPbF

SiHFBC20S-E3

PAK (TO-263)

SiHFBC20STRL-GE3

IRFBC20STRLPbF

SiHFBC20STL-E3

PAK (TO-262)

SiHFBC20L-GE3

IRFBC20LPbF

SiHFBC20L-E3

ABSOLUTE MAXIMUM RATINGS

= 25 °C, unless otherwise noted)

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain

Linear Derating Factor

Single Pulse Avalanche Energy

b, e

Avalanche Current

Repetiitive Avalanche Energy

Maximum Power Dissipation

Peak Diode Recovery dV/dt

c, e

= 25 °C

Current

a, e

at 10 V

= 25 °C

= 100 °C

SYMBOL

dV/dt

LIMIT

600

± 20

2.2

1.4

8.0

0.40

2.2

5.0

3.1

3.0

- 55 to + 150

300

UNIT

W/°C

V/ns

°C

Operating Junction and Storage Temperature Range

, T

stg

Soldering Recommendations (Peak Temperature)

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V

= 50 V, starting T

= 25 °C, L = 31 mH, R

= 25

,

= 2.2 A (see fig. 12).

c. I



2.2 A, dI/dt



40 A/μs, V



, T



150 °C.

d. 1.6 mm from case.

e. Uses IRFBC20, SiHFBC20 data and test conditions.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91107

S11-1052-Rev. C, 30-May-11

www.vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

SIHFBC20L-E3 Related Products

	SIHFBC20L-E3	SIHFBC20L	SIHFBC20S	SIHFBC20S-E3	SIHFBC20STL	SIHFBC20STL-E3	IRFBC20STRR
Description	2.2 A, 600 V, 4.4 ohm, N-CHANNEL, Si, POWER, MOSFET	2.2 A, 600 V, 4.4 ohm, N-CHANNEL, Si, POWER, MOSFET	2.2 A, 600 V, 4.4 ohm, N-CHANNEL, Si, POWER, MOSFET	2.2 A, 600 V, 4.4 ohm, N-CHANNEL, Si, POWER, MOSFET	2.2 A, 600 V, 4.4 ohm, N-CHANNEL, Si, POWER, MOSFET	2.2 A, 600 V, 4.4 ohm, N-CHANNEL, Si, POWER, MOSFET	MOSFET N-CH 600V 2.2A D2PAK
Is it lead-free?	Lead free	Contains lead	Contains lead	Lead free	Contains lead	Lead free	Contains lead
Is it Rohs certified?	conform to	incompatible	incompatible	conform to	incompatible	conform to	incompatible
package instruction	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2
Contacts	3	3	4	4	4	4	3
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	unknow	unknown
Avalanche Energy Efficiency Rating (Eas)	84 mJ	84 mJ	84 mJ	84 mJ	84 mJ	84 mJ	84 mJ
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	600 V	600 V	600 V	600 V	600 V	600 V	600 V
Maximum drain current (Abs) (ID)	2.2 A	2.2 A	2.2 A	2.2 A	2.2 A	2.2 A	2.2 A
Maximum drain current (ID)	2.2 A	2.2 A	2.2 A	2.2 A	2.2 A	2.2 A	2.2 A
Maximum drain-source on-resistance	4.4 Ω	4.4 Ω	4.4 Ω	4.4 Ω	4.4 Ω	4.4 Ω	4.4 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSIP-T3	R-PSIP-T3	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2
Number of components	1	1	1	1	1	1	1
Number of terminals	3	3	2	2	2	2	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	240	240	260	240	260	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	50 W	50 W	50 W	50 W	50 W	50 W	50 W
Maximum pulsed drain current (IDM)	8 A	8 A	8 A	8 A	8 A	8 A	8 A
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	YES	YES	YES	YES	YES
Terminal form	THROUGH-HOLE	THROUGH-HOLE	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	40	30	30	40	30	40	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Parts packaging code	TO-262AA	TO-262AA	D2PAK	D2PAK	D2PAK	D2PAK	-
Other features	AVALANCHE RATED	AVALANCHE RATED	AVALANCHE RATED	AVALANCHE RATED	AVALANCHE RATED	AVALANCHE RATED	-
JEDEC-95 code	TO-262AA	TO-262AA	TO-263AB	TO-263AB	TO-263AB	TO-263AB	-
JESD-609 code	e3	e0	e0	e3	e0	e3	-
Terminal surface	Matte Tin (Sn)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Matte Tin (Sn)	Tin/Lead (Sn/Pb)	Matte Tin (Sn)	-
Base Number Matches	1	1	1	1	1	1	-
Shell connection	-	-	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN

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