EEWORLDEEWORLDEEWORLD

Part Number

Search

SIHFBC30AS-E3

Description
3.6 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size277KB,12 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
Download Datasheet Parametric Compare View All

SIHFBC30AS-E3 Overview

3.6 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET

SIHFBC30AS-E3 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeD2PAK
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts4
Reach Compliance Codeunknow
Avalanche Energy Efficiency Rating (Eas)290 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage600 V
Maximum drain current (Abs) (ID)3.6 A
Maximum drain current (ID)3.6 A
Maximum drain-source on-resistance2.2 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-263AB
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)74 W
Maximum pulsed drain current (IDM)14 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
()
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
23
5.4
11
Single
D
FEATURES
600
2.2
I
2
PAK (TO-262)
D
2
PAK (TO-263)
Halogen-free According to IEC 61249-2-21
Definition
• Low Gate Charge Q
g
Results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
• Fully Characterized Capacitance and Avalanche Voltage
and Current
• Effective C
oss
Specified
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
G
D
S
S
N-Channel MOSFET
G
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching
TYPICAL SMPS TOPOLOGIES
• Single Transistor Flyback
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
Note
a. See device orientation.
D
2
PAK (TO-263)
SiHFBC30AS-GE3
IRFBC30ASPbF
SiHFBC30AS-E3
D
2
PAK (TO-263)
SiHFBC30ASTRL-GE3
a
IRFBC30ASTRLPbF
a
SiHFBC30ASTL-E3
a
D
2
PAK (TO-263)
SiHFBC30ASTRR-GE3
a
IRFBC30ASTRRPbF
a
SiHFBC30ASTR-E3
a
I
2
PAK (TO-262)
SiHFBC30AL-GE3
IRFBC30ALPbF
SiHFBC30AL-E3
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
a, e
Linear Derating Factor
Single Pulse Avalanche Energy
b
Avalanche Current
a
Repetiitive Avalanche
Energy
a
T
C
= 25 °C
Maximum Power Dissipation
Peak Diode Recovery dV/dt
c, e
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
J
= 25 °C, L = 46 mH, R
g
= 25
,
I
AS
= 3.6 A (see fig. 12).
c. I
SD
3.6 A, dI/dt
170 A/μs, V
DD
V
DS
, T
J
150 °C.
d. 1.6 mm from case.
e. Uses IRFBC30A/SiHFBC30A data and test conditions.
E
AS
I
AR
E
AR
P
D
dV/dt
T
J
, T
stg
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
LIMIT
600
± 30
3.6
2.3
14
0.69
290
3.6
7.4
74
7.0
- 55 to + 150
300
d
W/°C
mJ
A
mJ
W
V/ns
°C
A
UNIT
V
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91109
S11-1052-Rev. C, 30-May-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

SIHFBC30AS-E3 Related Products

SIHFBC30AS-E3 SIHFBC30AL SIHFBC30AL-E3 SIHFBC30AS SIHFBC30ASTL-E3 SIHFBC30ASTR SIHFBC30ASTR-E3
Description 3.6 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET 3.6 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET 3.6 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET 3.6 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET 3.6 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET 3.6 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET 3.6 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET
Is it lead-free? Lead free Contains lead Lead free Contains lead Lead free Contains lead Lead free
Is it Rohs certified? conform to incompatible conform to incompatible conform to incompatible conform to
Parts packaging code D2PAK TO-262AA TO-262AA D2PAK D2PAK D2PAK D2PAK
package instruction SMALL OUTLINE, R-PSSO-G2 IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2
Contacts 4 3 3 4 4 4 4
Reach Compliance Code unknow unknow unknow unknow unknow unknow unknow
Avalanche Energy Efficiency Rating (Eas) 290 mJ 290 mJ 290 mJ 290 mJ 290 mJ 290 mJ 290 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 600 V 600 V 600 V 600 V 600 V 600 V 600 V
Maximum drain current (Abs) (ID) 3.6 A 3.6 A 3.6 A 3.6 A 3.6 A 3.6 A 3.6 A
Maximum drain current (ID) 3.6 A 3.6 A 3.6 A 3.6 A 3.6 A 3.6 A 3.6 A
Maximum drain-source on-resistance 2.2 Ω 2.2 Ω 2.2 Ω 2.2 Ω 2.2 Ω 2.2 Ω 2.2 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-263AB TO-262AA TO-262AA TO-263AB TO-263AB TO-263AB TO-263AB
JESD-30 code R-PSSO-G2 R-PSIP-T3 R-PSIP-T3 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2
JESD-609 code e3 e0 e3 e0 e3 e0 e3
Number of components 1 1 1 1 1 1 1
Number of terminals 2 3 3 2 2 2 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE IN-LINE IN-LINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 240 260 240 260 240 260
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 74 W 74 W 74 W 74 W 74 W 74 W 74 W
Maximum pulsed drain current (IDM) 14 A 14 A 14 A 14 A 14 A 14 A 14 A
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES NO NO YES YES YES YES
Terminal surface Matte Tin (Sn) Tin/Lead (Sn/Pb) Matte Tin (Sn) Tin/Lead (Sn/Pb) Matte Tin (Sn) Tin/Lead (Sn/Pb) Matte Tin (Sn)
Terminal form GULL WING THROUGH-HOLE THROUGH-HOLE GULL WING GULL WING GULL WING GULL WING
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature 40 30 40 30 40 30 40
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Shell connection DRAIN - - DRAIN DRAIN DRAIN DRAIN
Humidity sensitivity level 1 - 1 - 1 - 1
Base Number Matches 1 - - 1 1 1 1
EE-FPGA-V1.0 welding and debugging notes upload
The welding and debugging of EE-FPGA-V1.0 is finally completed today. I quickly come here to share my experience. welding 1. According to the BOM provided by moderator chenzhufly , the purchased origi...
happy_xu00 FPGA/CPLD
How to add timer interrupt and port interrupt in zigbee protocol stack
I want to collect pulse signals, use port interrupt counting, and timer interrupt reading, but I don't know how to add code to the protocol stack. Please give me some advice....
zhaoping1228 RF/Wirelessly
I also received a gift
A speaker with an alarm clock. Very delicately made. I particularly like the alarm clock. The font is very large and can be read clearly at night without turning on the light. It fits perfectly next t...
zhdphao NXP MCU
Visit to the Renesas Cup 2015 National Undergraduate Electronic Design Competition
The Renesas Cup 2015 National Undergraduate Electronic Design Competition officially started at 8:00 this morning in 31 competition areas across the country and will officially end at 8:00 pm on Augus...
eric_wang Electronics Design Contest
Database issues
In vc6.0, when using ado to access the database, you need to add msado15.dll. So when accessing the database based on a smart device in vs2005, which libraries and header files should be added? Does a...
hbsunny78 Embedded System
What is the function of connecting a follower resistor?
What is the role of connecting a resistor to a follower? What is the difference between connecting a resistor and not connecting a resistor?...
提拉米苏 Analog electronics

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2125  2098  2802  1608  2813  43  57  33  17  1 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号