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SIHFBC30ASTL-E3

Description
3.6 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size277KB,12 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
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SIHFBC30ASTL-E3 Overview

3.6 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET

SIHFBC30ASTL-E3 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeD2PAK
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts4
Reach Compliance Codeunknow
Avalanche Energy Efficiency Rating (Eas)290 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage600 V
Maximum drain current (Abs) (ID)3.6 A
Maximum drain current (ID)3.6 A
Maximum drain-source on-resistance2.2 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-263AB
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)74 W
Maximum pulsed drain current (IDM)14 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
()
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
23
5.4
11
Single
D
FEATURES
600
2.2
I
2
PAK (TO-262)
D
2
PAK (TO-263)
Halogen-free According to IEC 61249-2-21
Definition
• Low Gate Charge Q
g
Results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
• Fully Characterized Capacitance and Avalanche Voltage
and Current
• Effective C
oss
Specified
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
G
D
S
S
N-Channel MOSFET
G
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching
TYPICAL SMPS TOPOLOGIES
• Single Transistor Flyback
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
Note
a. See device orientation.
D
2
PAK (TO-263)
SiHFBC30AS-GE3
IRFBC30ASPbF
SiHFBC30AS-E3
D
2
PAK (TO-263)
SiHFBC30ASTRL-GE3
a
IRFBC30ASTRLPbF
a
SiHFBC30ASTL-E3
a
D
2
PAK (TO-263)
SiHFBC30ASTRR-GE3
a
IRFBC30ASTRRPbF
a
SiHFBC30ASTR-E3
a
I
2
PAK (TO-262)
SiHFBC30AL-GE3
IRFBC30ALPbF
SiHFBC30AL-E3
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
a, e
Linear Derating Factor
Single Pulse Avalanche Energy
b
Avalanche Current
a
Repetiitive Avalanche
Energy
a
T
C
= 25 °C
Maximum Power Dissipation
Peak Diode Recovery dV/dt
c, e
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
J
= 25 °C, L = 46 mH, R
g
= 25
,
I
AS
= 3.6 A (see fig. 12).
c. I
SD
3.6 A, dI/dt
170 A/μs, V
DD
V
DS
, T
J
150 °C.
d. 1.6 mm from case.
e. Uses IRFBC30A/SiHFBC30A data and test conditions.
E
AS
I
AR
E
AR
P
D
dV/dt
T
J
, T
stg
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
LIMIT
600
± 30
3.6
2.3
14
0.69
290
3.6
7.4
74
7.0
- 55 to + 150
300
d
W/°C
mJ
A
mJ
W
V/ns
°C
A
UNIT
V
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91109
S11-1052-Rev. C, 30-May-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

SIHFBC30ASTL-E3 Related Products

SIHFBC30ASTL-E3 SIHFBC30AL SIHFBC30AL-E3 SIHFBC30AS SIHFBC30AS-E3 SIHFBC30ASTR SIHFBC30ASTR-E3
Description 3.6 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET 3.6 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET 3.6 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET 3.6 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET 3.6 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET 3.6 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET 3.6 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET
Is it lead-free? Lead free Contains lead Lead free Contains lead Lead free Contains lead Lead free
Is it Rohs certified? conform to incompatible conform to incompatible conform to incompatible conform to
Parts packaging code D2PAK TO-262AA TO-262AA D2PAK D2PAK D2PAK D2PAK
package instruction SMALL OUTLINE, R-PSSO-G2 IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2
Contacts 4 3 3 4 4 4 4
Reach Compliance Code unknow unknow unknow unknow unknow unknow unknow
Avalanche Energy Efficiency Rating (Eas) 290 mJ 290 mJ 290 mJ 290 mJ 290 mJ 290 mJ 290 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 600 V 600 V 600 V 600 V 600 V 600 V 600 V
Maximum drain current (Abs) (ID) 3.6 A 3.6 A 3.6 A 3.6 A 3.6 A 3.6 A 3.6 A
Maximum drain current (ID) 3.6 A 3.6 A 3.6 A 3.6 A 3.6 A 3.6 A 3.6 A
Maximum drain-source on-resistance 2.2 Ω 2.2 Ω 2.2 Ω 2.2 Ω 2.2 Ω 2.2 Ω 2.2 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-263AB TO-262AA TO-262AA TO-263AB TO-263AB TO-263AB TO-263AB
JESD-30 code R-PSSO-G2 R-PSIP-T3 R-PSIP-T3 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2
JESD-609 code e3 e0 e3 e0 e3 e0 e3
Number of components 1 1 1 1 1 1 1
Number of terminals 2 3 3 2 2 2 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE IN-LINE IN-LINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 240 260 240 260 240 260
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 74 W 74 W 74 W 74 W 74 W 74 W 74 W
Maximum pulsed drain current (IDM) 14 A 14 A 14 A 14 A 14 A 14 A 14 A
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES NO NO YES YES YES YES
Terminal surface Matte Tin (Sn) Tin/Lead (Sn/Pb) Matte Tin (Sn) Tin/Lead (Sn/Pb) Matte Tin (Sn) Tin/Lead (Sn/Pb) Matte Tin (Sn)
Terminal form GULL WING THROUGH-HOLE THROUGH-HOLE GULL WING GULL WING GULL WING GULL WING
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature 40 30 40 30 40 30 40
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Shell connection DRAIN - - DRAIN DRAIN DRAIN DRAIN
Humidity sensitivity level 1 - 1 - 1 - 1
Base Number Matches 1 - - 1 1 1 1
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