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SIHFBC40ASTL

Description
6.2 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size406KB,10 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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SIHFBC40ASTL Overview

6.2 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET

SIHFBC40ASTL Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerVishay
Parts packaging codeD2PAK
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts4
Reach Compliance Codeunknow
Avalanche Energy Efficiency Rating (Eas)570 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage600 V
Maximum drain current (Abs) (ID)6.2 A
Maximum drain current (ID)6.2 A
Maximum drain-source on-resistance1.2 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-263AB
JESD-30 codeR-PSSO-G2
JESD-609 codee0
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)240
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)125 W
Maximum pulsed drain current (IDM)25 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
IRFBC40AS, SiHFBC40AS
www.vishay.com
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
()
Q
g
max. (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
42
10
20
Single
D
FEATURES
600
1.2
• Low gate charge Q
g
results in simple drive
requirement
• Improved gate, avalanche and dynamic dV/dt
ruggedness
• Fully characterized capacitance and avalanche
voltage and current
• Effective C
oss
specified
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
Note
*
This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.
Available
Available
D
2
PAK (TO-263)
G
G D
S
S
N-Channel MOSFET
APPLICATIONS
• Switch mode power supply (SMPS)
• Uninterruptible power supply
• High speed power switching
TYPICAL SMPS TOPOLOGIES
• Single transistor forward
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
Note
a. See device orientation.
D
2
PAK (TO-263)
SiHFBC40AS-GE3
IRFBC40ASPbF
SiHFBC40AS-E3
D
2
PAK (TO-263)
SiHFBC40ASTRL-GE3
a
IRFBC40ASTRLPbF
a
SiHFBC40ASTL-E3
a
D
2
PAK (TO-263)
SiHFBC40ASTRR-GE3
a
IRFBC40ASTRRPbF
a
SiHFBC40ASTR-E3
a
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
e
Pulsed Drain Current
a, e
Linear Derating Factor
Single Pulse Avalanche Energy
Repetitive Avalanche Current
a
Repetitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
c, e
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak temperature)
d
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
J
= 25 °C, L = 29.6 mH, R
g
= 25
,
I
AS
= 6.2 A (see fig. 12).
c. I
SD
6.2 A, dI/dt
88 A/μs, V
DD
V
DS
, T
J
150 °C.
d. 1.6 mm from case.
e. Uses IRFBC40A, SiHFBC40A data and test conditions.
S16-0763-Rev. D, 02-May-16
Document Number: 91113
1
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
a
b
SYMBOL
V
DS
V
GS
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
I
D
I
DM
E
AS
I
AR
E
AR
T
C
= 25 °C
P
D
dV/dt
T
J
, T
stg
LIMIT
600
± 30
6.2
3.9
25
1.0
570
6.2
13
125
6.0
-55 to +150
300
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C

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Description 6.2 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET 6.2 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET 6.2 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET 6.2 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET 6.2 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET 6.2 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET 6.2 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET
Is it Rohs certified? incompatible incompatible incompatible conform to conform to incompatible conform to
package instruction SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code unknow unknow unknow unknow unknow unknow unknow
Avalanche Energy Efficiency Rating (Eas) 570 mJ 570 mJ 570 mJ 570 mJ 570 mJ 570 mJ 570 mJ
Shell connection DRAIN DRAIN DRAIN DRAIN DRAIN DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 600 V 600 V 600 V 600 V 600 V 600 V 600 V
Maximum drain current (Abs) (ID) 6.2 A 6.2 A 6.2 A 6.2 A 6.2 A 6.2 A 6.2 A
Maximum drain current (ID) 6.2 A 6.2 A 6.2 A 6.2 A 6.2 A 6.2 A 6.2 A
Maximum drain-source on-resistance 1.2 Ω 1.2 Ω 1.2 Ω 1.2 Ω 1.2 Ω 1.2 Ω 1.2 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2
JESD-609 code e0 e0 e0 e3 e3 e0 e3
Number of components 1 1 1 1 1 1 1
Number of terminals 2 2 2 2 2 2 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 240 NOT SPECIFIED 240 260 260 240 260
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 125 W 125 W 125 W 125 W 125 W 125 W 125 W
Maximum pulsed drain current (IDM) 25 A 25 A 25 A 25 A 25 A 25 A 25 A
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES YES YES YES
Terminal surface Tin/Lead (Sn/Pb) TIN LEAD Tin/Lead (Sn/Pb) Matte Tin (Sn) Matte Tin (Sn) Tin/Lead (Sn/Pb) Matte Tin (Sn)
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature 30 NOT SPECIFIED 30 40 40 30 40
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Is it lead-free? Contains lead - Contains lead Lead free Lead free Contains lead Lead free
Maker Vishay - Vishay Vishay Vishay Vishay Vishay
Parts packaging code D2PAK - D2PAK D2PAK D2PAK D2PAK D2PAK
Contacts 4 - 4 4 4 4 4
JEDEC-95 code TO-263AB - TO-263AB TO-263AB TO-263AB TO-263AB TO-263AB
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