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SIHFPC50A-E3

Description
11 A, 600 V, 0.58 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC
CategoryDiscrete semiconductor    The transistor   
File Size201KB,9 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
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SIHFPC50A-E3 Overview

11 A, 600 V, 0.58 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC

SIHFPC50A-E3 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerVishay
Parts packaging codeTO-247
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknow
Avalanche Energy Efficiency Rating (Eas)920 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage600 V
Maximum drain current (Abs) (ID)11 A
Maximum drain current (ID)11 A
Maximum drain-source on-resistance0.58 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-247
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)180 W
Maximum pulsed drain current (IDM)44 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
IRFPC50A, SiHFPC50A
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
()
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
70
19
28
Single
D
FEATURES
600
0.58
• Low Gate Charge Q
g
Results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Available
RoHS*
COMPLIANT
• Fully Characterized Capacitance and Avalanche Voltage
and Current
• Effective C
oss
Specified
• Compliant to RoHS Directive 2002/95/EC
TO-247AC
APPLICATIONS
• Switch Mode Power Supply (SMPS)
G
• Uninterruptable Power Supply
• High Speed Power Switching
S
D
G
S
N-Channel MOSFET
TYPICAL SMPS TOPOLOGY
• PFC Boost
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
TO-247AC
IRFPC50APbF
SiHFPC50A-E3
IRFPC50A
SiHFPC50A
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain
Current
a
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
E
AS
I
AR
E
AR
T
C
= 25 °C
P
D
dV/dt
T
J
, T
stg
for 10 s
6-32 or M3 screw
LIMIT
600
± 30
11
7.0
44
1.4
920
11
18
180
4.9
- 55 to + 150
300
d
10
1.1
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
A
UNIT
V
Linear Derating Factor
Single Pulse Avalanche Energy
b
Repetitive Avalanche
Current
a
Repetitive Avalanche Energy
a
Maximum Power Dissipation
Peak Diode Recovery
dV/dt
c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
J
= 25 °C, L = 15 mH, R
g
= 25
,
I
AS
= 11 A (see fig. 12).
c. I
SD
11 A, dI/dt
126 A/μs, V
DD
V
DS
, T
J
150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91241
S11-0443-Rev. B, 14-Mar-11
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

SIHFPC50A-E3 Related Products

SIHFPC50A-E3 SIHFPC50A
Description 11 A, 600 V, 0.58 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC 11 A, 600 V, 0.58 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC
Is it lead-free? Lead free Contains lead
Is it Rohs certified? conform to incompatible
Maker Vishay Vishay
Parts packaging code TO-247 TO-247
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Contacts 3 3
Reach Compliance Code unknow unknow
Avalanche Energy Efficiency Rating (Eas) 920 mJ 920 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 600 V 600 V
Maximum drain current (Abs) (ID) 11 A 11 A
Maximum drain current (ID) 11 A 11 A
Maximum drain-source on-resistance 0.58 Ω 0.58 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-247 TO-247
JESD-30 code R-PSFM-T3 R-PSFM-T3
JESD-609 code e3 e0
Number of components 1 1
Number of terminals 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 180 W 180 W
Maximum pulsed drain current (IDM) 44 A 44 A
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal surface Matte Tin (Sn) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
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